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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Masaaki Kuzuhara (Univ. of Fukui)
Vice Chair Tamotsu Hashidume (Hokkaido Univ.)
Secretary Shin-ichiro Takatani (Hitachi), Koichi Murata (NTT)
Assistant Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)

Conference Date Thu, Oct 23, 2008 13:00 - 14:40
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Thu, Oct 23 PM 
13:00 - 14:40
(1) 13:00-13:25 Crystalline Recovery and Point Defects Re-arrangement during Activation Annealing of Implanted SiC Crystal ED2008-146 Ryo Hattori, Tomokatsu Watanabe, Hiroaki Sumitani, Tatsuo Oomori (Mitsubishi Electric Corp.), Takeshi Mitani (TRC)
(2) 13:25-13:50 High-Voltage AlGaN/GaN Schottky Barrier Diodes on Si Substrate with Low-Temperature GaN Cap Layer for Edge Termination ED2008-149 Atsushi Kamada (NJRC), Takashi Egawa (NIT)
(3) 13:50-14:15 High-power AlGaN/GaN HFETs on 4-inch Si substrates ED2008-148 Nariaki Ikeda, Syuusuke Kaya, Jiang Li, Takuya Kokawa, Yoshihiro Sato, Sadahiro Kato (Furukawa Electric)
(4) 14:15-14:40 Recent Advances on GaN Vertical Power Devices ED2008-147 Tetsu Kachi (Toyota R&D Labs.)

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Shinichiro Takatani(Hitachi)
TEL: 049-278-1477、FAX: 049-278-1419
E--mail: er
Koichi Murata(NTT)
TEL:046-240-2871、FAX:046-270-2872
E--mailaecl
Hara Naoki (Fujitsu Lab.)
TEL : 046-250-8242、FAX : 046-250-8168
E--mail : o
Kunio Tsuda(Toshiba)
TEL : 044-549-2142、FAX : 044-520-1501
E--mail : oba 


Last modified: 2008-08-20 09:47:27


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