6月27日(水) 午前 Opening Session 08:40 - 08:50 |
|
08:40-08:50 |
Opening Address ( 10分 ) |
6月27日(水) 午前 Plenary Session 08:50 - 10:50 |
(1) |
08:50-09:30 |
[基調講演]TCAD challenges and opportunities for predictive development |
Yongwoo Kwon・○Dae Sin Kim・Young-Kwan Park(Samsung Electronics) |
(2) |
09:30-10:10 |
[基調講演]More-than-Moore Devices based on Advanced CMOS Technologies |
○Hitoshi Wakabayashi(Sony) |
(3) |
10:10-10:50 |
[基調講演]GaNパワーデバイスの最新技術 |
○上田大助(パナソニック) |
|
11:00-11:10 |
Short Break ( 10分 ) |
6月27日(水) 午前 Si-based Power Device Technology 11:00 - 12:00 |
(4) |
11:00-11:15 |
Electrical characteristics of IGBT using a field stop trench gate structure |
○Ey Goo Kang(Far East Univ.)・Eun Sik Jung(Maplesemiconductor Incorporated)・Yong Tae Kim(KIST) |
(5) |
11:15-11:30 |
Optimization and characterization of 600V super junction power MOSFET using a deep trench structure |
○Yong Tae Kim(KIST)・Eun Sik Jung(Maplesemiconductor Inc.)・Ey Goo Kang(Far East Univ.) |
(6) |
11:30-12:00 |
[招待講演]Gate Stack Technologies for Silicon Carbide Power MOS Devices |
○Takuji Hosoi・Takashi Kirino・Yusuke Uenishi・Daisuke Ikeguchi・Atthawut Chanthaphan(Osaka Univ.)・Akitaka Yoshigoe・Yuden Teraoka(JAEA)・Shuhei Mitani・Yuki Nakano・Takashi Nakamura(ROHM)・Takayoshi Shimura・Heiji Watanabe(Osaka Univ.) |
6月27日(水) 午前 Detectors and Sensors 11:00 - 12:15 |
(7) |
11:00-11:30 |
[招待講演]III-nitride-based Visible-blind and Solar-blind Photodetectors |
○Hai Lu・Rong Zhang・Youdou Zheng(School of ESE, Nanjing Univ.) |
(8) |
11:30-11:45 |
The Very Fast Transferred Pixel with a Multi-Pinchoff Photodiode for Wafer-Scale X-Ray Sensor |
○Joonghyeok Byeon・Jongmin Kim・Won-Young Jung(Dongbu Hitek)・Ji-Hoon Lim・Jae-Kyung Wee(Soongsil Univ.) |
(9) |
11:45-12:15 |
[招待講演]Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors |
○Kyung Rok Kim・Min Woo Ryu・Sunhae Shin・Hee Cheol Hwang・Kibog Park(UNIST) |
|
12:15-13:15 |
Lunch Break ( 60分 ) |
6月27日(水) 午後 MOSFETs and Memory Technology 13:15 - 15:00 |
(10) |
13:15-13:30 |
Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors |
○Sang Wan Kim(Seoul National Univ.)・Woo Young Choi(Sogang Univ.)・Min-Chul Sun・Hyun Woo Kim・Byung-Gook Park(Seoul National Univ.) |
(11) |
13:30-13:45 |
The Asymmetric I-V Characteristics of Vertical MOSFET Induced by Tapered Silicon Pillar |
○Takuya Imamoto・Tetsuo Endoh(Tohoku Univ.) |
(12) |
13:45-14:00 |
A High Performance SRAM Sense Amplifier with Vertical MOSFET |
○Hyoungjun Na・Tetsuo Endoh(Tohoku Univ.) |
(13) |
14:00-14:15 |
Effects of Random Dopant Fluctuations on NAND Flash Memory Cells |
Jungeun Kang・○Boram Han(Sogang Univ.)・Kyoung-Rok Han・Chung sung Jae・Gyu-Seog Cho・Sung-Kye Park・Seok-Kiu Lee(SK Hynix)・Woo Young Choi(Sogang Univ.) |
(14) |
14:15-14:30 |
Control Effect of New Optimized Structure of Planar Thin Floating Gate (FG) NAND Flash to Fringing Field |
○Do-Bin Kim・Yoon Kim・Se Hwan Park・Wandong Kim・Joo Yun Seo・Seung-Hyun Kim・Byung-Gook Park(Seoul National Univ.) |
(15) |
14:30-14:45 |
A Novel CMOS-Based PNP BJT Structure for Analog Applications |
○Seon-Man Hwang・Yi-Jung Jung・Hyuk-Min Kwon・Jae-Hyung Jang・Ho-Young Kwak・Sung-Kyu Kwon(Chungnam National Univ.)・Yi-Sun Chung・Da-Soon Lee・Jong-Kon Lee(Magnachip Semiconductor Inc.)・Hi-Deok Lee(Chungnam National Univ.) |
(16) |
14:45-15:00 |
100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits |
○Hidetoshi Utsumi・Ryohei Kasahara・Yukihisa Nakao・Rihito Kuroda・Akinobu Teramoto・Shigetoshi Sugawa・Tadahiro Ohmi(Tohoku Univ.) |
|
15:00-15:15 |
Break ( 15分 ) |
6月27日(水) 午後 TFT Technology I 15:15 - 16:45 |
(17) |
15:15-15:30 |
Field-induced degradation of organic field effect transistors under vacuum condition |
Hoonsang Yoon・○Youngjin Kang・Jongsun Choi・Hyungtak Kim(Hongik Univ.) |
(18) |
15:30-15:45 |
Nonvolatile Memory Thin-Film Transistors Using Solution-Processed Oxide Semiconducting Channel and Ferroelectric Polymer Gate Insulator |
Jun-Yong Bak(Kyung Hee Univ.)・Soon-Won Jung・Ho-Jun Ryu・Sang-Hee Ko Park・Chi-Sun Hwang(ETRI)・○Sung-Min Yoon(Kyung Hee Univ.) |
(19) |
15:45-16:00 |
Influence of co-sputtered HfO2-Ti gate dielectric in IZO-based Transparent thin film transistors |
○Jungil Yang・Donghee Lee・Dongkyu Cho・Sanghyun Woo・Yoosung Lim・Sungmin Park・Daekuk Kim・Moonsuk Yi(PNU.) |
(20) |
16:00-16:15 |
A New RSD Bottom Gate Poly-Si Thin Film Transistor With Inside Spacer |
○Yi-Hsiang Chiu・Shan-Jen Yang・Feng-Tso Chien(Feng Chia Univ.)・Chii-Wen Chen(Minghsin Univ.) |
(21) |
16:15-16:30 |
The study on A Novel Asymmetric Poly-Si Thin Film Transistor With Low Drain Electric Field |
○Meng-Shan Chi・Tzung-Ju Lin・Feng-Tso Chien(Feng Chia Univ.)・Chii-Wen Chen(Minghsin Univ.) |
(22) |
16:30-16:45 |
Influence of grain size deviation on device characteristics of TFTs and displays for OLED driving |
○Katsuya Shirai・Takashi Noguchi(Univ. of the Ryukyus) |
|
16:45-17:15 |
Break ( 30分 ) |
6月27日(水) 午後 TFT Technology II 17:15 - 18:45 |
(23) |
17:15-17:30 |
Crystallization of a-Si Films with Smooth Surface Using Blue-Multi-Laser-Diode-Annealing |
○Tatsuya Okada・Jean de Dieu Mugiraneza・Katsuya Shirai・Takuma Nishinohara・Tomoyuki Mukae・Keisuke Yagi・Takashi Noguchi(Univ. Ryukyus) |
(24) |
17:30-17:45 |
Characterization of Optimized Sputtered Poly-Si Films by Blue-Multi-Laser-Diode Annealing for High Performance Displays |
○Takuma Nishinohara・J. D. Mugiraneza・Katsuya Shirai・Tatsuya Okada・Takashi Noguchi(Univ. of the Ryukyus) |
(25) |
17:45-18:00 |
Effective Annealing of Si Films as an advanced LTPS |
○Takashi Noguchi・Takuma Nishinohara・Jean de Dieu Mugiraneza・Katsuya Shirai・Tatsuya Okada(Univ. Ryukyus) |
(26) |
18:00-18:15 |
Improvement of Low-Temperature-Deposited SiO2 and Si/SiO2 interface Properties by Thermal-Plasma-Jet Annealing and Heat Treatment in High-Pressure H2O Vapor |
○Shunki Koyanagi・Shohei Hayashi・Tsubasa Mizuno・Kouhei Sakaike・Hiroaki Hanafusa・Seiichiro Higashi(Hiroshima Univ.) |
(27) |
18:15-18:30 |
Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth |
○Yuki Tojo・Ryo Matsumura・Hiroyuki Yokoyama・Masashi Kurosawa・Kaoru Toko・Taizoh Sadoh・Masanobu Miyao(Kyushu Univ.) |
(28) |
18:30-18:45 |
Formation of (111)-oriented large-grain Ge crystal on insulator at low-temperature by gold-induced crystallization technique |
○Jonghyeok Park・Tsuneharu Suzuki・Masanobu Miyao・Taizoh Sadoh(Kyushu Univ.) |
6月27日(水) 午後 Interconnects and Integration Technologies 13:15 - 15:00 |
(29) |
13:15-13:30 |
Loss characteristic of Comb-type Capacitive Transmission Line on MMIC |
○Eui-Hoon Jang・Jang-Hyeon Jeong・Sung-Jo Han・Ki-Jun Son・Young Yun(Korea Maritime Univ.) |
(30) |
13:30-13:45 |
Loss characteristic of Coplanar Waveguide Employing Periodic Structure on RFIC |
○Jang-Hyeon Jeong・Eui-Hoon Jang・Sung-Jo Han・Ki-Jun Son・Young Yun(Korea Maritime Univ.) |
(31) |
13:45-14:00 |
A Simple Dual-Loop Optoelectronic Oscillator with Reduced Spurious Tones Using a Multi-Electrode Semiconductor Laser |
○Jun-Hyung Cho・Seo-Weon Heo・Hyuk-Kee Sung(Hongik Univ.) |
(32) |
14:00-14:15 |
A chip scale wafer level packaging for LED using surface aligning technique. |
○Jin Kwan Kim・Hee Chul Lee(KAIST) |
(33) |
14:15-14:30 |
Stress Measurement Errors induced by the Strain Effects in Resistor-based Stress Sensors on (111) silicon |
○Chun-Hyung Cho・Ho-Young Cha(Hongik Univ.) |
(34) |
14:30-14:45 |
Comparison of thin film properties of WN diffusion barrier prepared by atomic layer deposition using metal organic and metal halide reactant gases |
○Yeong Hyeon Hwang(KIST)・Won-Ju Cho(Kwangwoon Univ.)・Yong Tae Kim(KIST) |
(35) |
14:45-15:00 |
Fabrication of β-FeSi2 thin films on Si using solid-phase growth reaction from Fe and FeSi sources |
○Katsuaki Momiyama・Kensaku Kanomata・Takahiko Suzuki・Shigeru Kubota・Fumihiko Hirose(Yamagata Univ.) |
|
15:00-15:15 |
Break ( 15分 ) |
6月27日(水) 午後 Circuit Technology I 15:15 - 17:00 |
(36) |
15:15-15:45 |
[招待講演]CIS in high-end mobile camera |
○Kangbong Seo・Kyoungin Lee・Siwook Yoo・Sangdong Yoo・Kyoungdong Yoo(SK Hynix) |
(37) |
15:45-16:15 |
[招待講演]Nonlinear Three Branch Nano-Junction Devices and Their Application to Logic Circuits |
○Seiya Kasai(Hokkaido Univ.)・Shaharin Fadzli Abd Rahman(UTM/Hokkaido Univ.)・Masaki Sato・Xiang Yin(Hokkaido Univ.)・Toshihiko Maemoto(Osaka Inst. Tech.) |
(38) |
16:15-16:30 |
A 140-GHz Fully Differential Common-Source Amplifier in 65nm CMOS |
○Hyunchul Kim・Daekeun Yoon・Jae-Sung Rieh(Korea Univ.) |
(39) |
16:30-16:45 |
An Area-Efficient CMOS Delay-Locked Loop |
○Sungkeun Lee・Se-Weon Heo・Jongsun Kim(Hongik Univ.) |
(40) |
16:45-17:00 |
A Wide Range and High Resolution CMOS DCC |
○Sangwoo Han・Jongsun Kim(Hongik Univ.) |
|
17:00-17:15 |
Break ( 15分 ) |
6月27日(水) 午後 Circuit Technology II 17:15 - 19:00 |
(41) |
17:15-17:30 |
A 0.5-V 2.4-GHz CMOS Voltage-Controlled Oscillator for Wireless Sensor Network Application |
○Seunghyeon Kim・Hyunchol Shin(Kwangwoon Univ.) |
(42) |
17:30-17:45 |
A 2.4-GHz CMOS Single-Chip OOK Transceiver for Wireless Sensor Network Applications |
○Seunghyeon Kim・Hyun Kim・Hyunchol Shin(Kwangwoon Univ.) |
(43) |
17:45-18:00 |
The Robust Cgd/Cgs Measurement Method of 85V nLDMOS |
○Won-Young Jung・Jin-Soo Kim・Taek-Soo Kim(Dongbu Hitek) |
(44) |
18:00-18:15 |
Design of Small-Area and High-Reliability 512-Bit EEPROM IP and its Measurement |
○Liyan Jin・Geon-Soo Yonn・Dong-Hoon Lee・Ji-Hye Jang・Mu-Hun Park・Pan-Bong Ha・Young-Hee Kim(Changwon National Univ.) |
(45) |
18:15-18:30 |
Design of a Differential Paired eFuse One-Time Programmable Memory IP and its Measurement |
○Huiling Yang・Min-Sung Kim・Ji-Hye Jang・Mu-hun Park・Pan-Bong Ha・Young-Hee Kim(Changwon National Univ.) |
(46) |
18:30-18:45 |
A Design of 5 - 6 GHz Band Rat-Race Hybrid Ring Coupler with Improved Phase-Error for Microstrip Structure |
○Kyunghoon Kim・Dohyung Kim・Junghyun Shin・Jinwook Burm(Sogang Univ.) |
(47) |
18:45-19:00 |
A Power-Efficient 4-PAM Serial Link Receiver using a fully differential Rail-to-Rail input Dynamic Latch for Wide Dynamic Range |
○Junan Lee・Daeho Yun・Bongsub Song・Jinwook Burm(Sognag Univ.) |
6月28日(木) 午前 Memory Technology 08:30 - 10:40 |
(48) |
08:30-08:45 |
Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory |
○Min Su Han・Yeong Hwan Kim・Kyung Soo Kim・Jae Min Lee・Youngcheol Oh・Woo Young Choi(Myongji Univ.)・Woo Young Choi(Sogang Univ.)・Il Hwan Cho(Myongji Univ.) |
(49) |
08:45-09:00 |
Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior |
○Akio Ohta(Hiroshima Univ.)・Katsunori Makihara(Nagoya Univ.)・Mitsuhisa Ikeda・Hideki Murakami・Seiichiro Higashi(Hiroshima Univ.)・Seiichi Miyazaki(Nagoya Univ.) |
(50) |
09:00-09:15 |
Characterization of Resistive Switching of Pt/Si-rich Oxide/TiN System |
○Motoki Fukusima(Nagoya Univ.)・Akio Ohta(Hiroshima Univ.)・Katsunori Makihara・Seiichi Miyazaki(Nagoya Univ.) |
(51) |
09:15-09:30 |
Nonvolatile Polymer Memory-cell embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene |
○Jong-Dae Lee・HyunMin Seung・Chang-Hwan Kim・Jea-Gun Park(Hanyang Uni.) |
(52) |
09:30-09:45 |
Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar structures by Conducting-Probe Atomic Force Microscopy |
○Daichi Takeuchi・Katsunori Makihara(Nagoya Univ.)・Mitsuhisa Ikeda(Hiroshima Univ.)・Seiichi Miyazaki(Nagoya Univ.)・Hirokazu Kaki・Tsukasa Hayashi(NISSIN ELECTRIC Co. Ltd.,) |
(53) |
09:45-10:00 |
Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures |
○Mitsuhisa Ikeda(Hiroshima Univ.)・Katsunori Makihara・Seiichi Miyazaki(Nagoya Univ.) |
|
10:00-10:40 |
Break ( 40分 ) |
6月28日(木) 午前 Energy Harvesting 08:30 - 09:45 |
(54) |
08:30-09:00 |
[招待講演]Voltage Multiplier Circuits and Radio Wave Generation Module for Energy Harvesting System |
Saejeong Choi・Changsun Kim・Hyunshin Lee・Inyoung Kim・Dongchul Park(MJU)・Sooyoung Min・Yunsik Lee(KETI)・○Taikyeong Jeong(MJU) |
(55) |
09:00-09:30 |
[招待講演]Exploitation of Hierarchical Nanomaterials for Improving Light-Harvesting and Charge Collecting Properties of Dye-sensitized Solar Cells |
○Hyun Suk Jung(SKKU) |
(56) |
09:30-09:45 |
Lead Zirconate Titanate Acoustic Energy Harvesters for use in high sound pressure environments |
○Tomohiro Matsuda・Saori Hagiwara・Shuntaro Miyake・Kazuki Tomii・Satoshi Iizumi・Shungo Tomioka・Shu Kimura・Kyohei Tsujimoto・Yusuke Uchida・Yasushiro Nishioka(Nihon Univ.) |
6月28日(木) 午前 Gate Stack Technology 09:45 - 10:30 |
(57) |
09:45-10:00 |
Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer |
○Kuniaki Hashimoto・Akio Ohta・Hideki Murakami・Seiichiro Higashi(Hiroshima Univ.)・Seiichi Miyazaki(Nagoya Univ.) |
(58) |
10:00-10:15 |
Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures |
○Kusumandari・Wakana Takeuchi・Kimihiko Kato・Shigehisa Shibayama・Mitsuo Sakashita・Noriyuki Taoka・Osamu Nakatsuka・Shigeaki Zaima(Nagoya Univ.) |
(59) |
10:15-10:30 |
Effect of Si surface roughness on EOT reduction for HfON gate insulator formed by ECR plasma oxidation of HfN |
○Dae-Hee Han・Shun-ichiro Ohmi(Tokyo Tech) |
|
10:30-10:40 |
Short Break ( 10分 ) |
|
10:40-12:00 |
Poster session ( 80分 ) |
|
12:00-13:00 |
Lunch Break ( 60分 ) |
|
13:00-18:00 |
Excursion ( 300分 ) |
|
18:00-20:00 |
Banquet ( 120分 ) |
6月29日(金) 午前 Advanced Si Technology 08:15 - 10:30 |
(60) |
08:15-08:45 |
[招待講演]The Stability of Bandgap Reference Voltage with Device Structures |
○Sang-Gi Lee・Jun-Woo Song・Eun-Sang Jo・Kwang-Dong Yoo(Dongbu HiTek) |
(61) |
08:45-09:15 |
[招待講演]Potential of GeSn Alloys for Application to Si Nanoelectronics |
○Shigeaki Zaima・Yosuke Shimura・Marika Nakamura・Wakana Takeuchi・Mitsuo Sakashita・Osamu Nakatsuka(Nagoya Univ.) |
(62) |
09:15-09:45 |
[招待講演]III-V/Ge integration on Si platform for electronic-photonic integrated circuits |
○Mitsuru Takenaka・Shinichi Takagi(Univ. Tokyo) |
(63) |
09:45-10:15 |
[招待講演]超低電力応用に向けた薄膜BOX-SOI (SOTB) CMOS技術 |
○杉井信之・岩松俊明・山本芳樹・槇山秀樹・角村貴昭・篠原博文・青野英樹・尾田秀一・蒲原史朗・山口泰男(超低電圧デバイス技研組合/ルネサス エレクトロニクス)・水谷朋子・平本俊郎(東大) |
(64) |
10:15-10:30 |
Novel Tunneling Field-Effect Transistor with Sigma-shape Embedded SiGe Sources and Recessed Channel |
Min-Chul Sun(SNU and SEC)・○Sang Wan Kim・Garam Kim・Hyun Woo Kim・Hyungjin Kim・Jong-Ho Lee・Hyungcheol Shin・Byung-Gook Park(SNU) |
|
10:30-10:45 |
Break ( 15分 ) |
6月29日(金) 午前 MOSFET Reliability 10:45 - 12:30 |
(65) |
10:45-11:15 |
[招待講演]Decomposition analysis of on-current variability of FinFETs |
○Takashi Matsukawa・Yongxun Liu・Kazuhiko Endo・Shinichi O'uchi・Meishoku Masahara(AIST) |
(66) |
11:15-11:45 |
[招待講演]Thermal-Aware Device Desing of Nanoscale MOS Transistors |
○Ken Uchida(Keio Univ.)・Tsunaki Takahashi・Nobuyasu Beppu(Tokyo Tech) |
(67) |
11:45-12:00 |
Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs |
○Tomoko Mizutani・Anil Kumar・Toshiro Hiramoto(Univ. of Tokyo) |
(68) |
12:00-12:15 |
Reliability Measurement of PFETs under Post Fabrication Self-Improvement Scheme for SRAM |
○Nurul Ezaila Alias・Anil Kumar・Takuya Saraya(Univ. of Tokyo)・Shinji Miyano(STARC)・Toshiro Hiramoto(Univ. of Tokyo) |
(69) |
12:15-12:30 |
The Effects of Fluorine Implantation on 1/f noise and reliability characteristics of NMOSFET |
○Jae-Hyung Jang・Hyuk-Min Kwon・Ho-Young Kwak・Sung-Kyu Kwon・Seon-Man Hwang・Jong-Kwan Shin(Chungnam National Univ.)・Seung-Yong Sung・Yi-Sun Chung・Da-Soon Lee・Jong-Kon Lee(Magnachip Semiconductor Inc)・Hi-Deok Lee(Chungnam National Univ.) |
6月29日(金) 午前 Widegap and III-V Semiconductor Devices 08:15 - 10:30 |
(70) |
08:15-08:45 |
[招待講演]Integrated Design Platform for Power Electronics Applications with GaN Devices |
○Kenji Mizutani・Hiroaki Ueno・Yuji Kudoh・Shuichi Nagai・Kaoru Inoue・Nobuyuki Otsuka・Tetsuzo Ueda・Tsuyoshi Tanaka・Daisuke Ueda(Panasonic) |
(71) |
08:45-09:15 |
[招待講演]Current Status of GaN Technologies in ETRI |
○Jae Kyoung Mun・Jong-Won Lim・Sang Choon Ko・Seong-il Kim・Eun Soo Nam(ETRI) |
(72) |
09:15-09:45 |
[招待講演]New widegap semiconductor Ga2O3 MESFETs and Schottky barrier diodes |
○Masataka Higashiwaki(NICT/JST)・Kohei Sasaki(Tamura Corp./NICT)・Akito Kuramata(Tamura Corp.)・Takekazu Masui(Koha Co., Ltd.)・Shigenobu Yamakoshi(Tamura Corp.) |
(73) |
09:45-10:15 |
[招待講演]InAs Quantum-Well MOSFET (Lg = 100 nm) for Logic and Microwave Applications |
○Tae-Woo Kim・Richard Hill(SEMATECH)・Dae-Hyun Kim(Teledyne)・Jesus A. del Alamo(MIT)・Chad D. Young・Dmitry Veksler・Chang Yong Kang(SEMATECH)・Jungwoo Oh(Yonsei Univ.)・Chris Hobbs・Paul D. Kirsch・Raj Jammy(SEMATECH) |
(74) |
10:15-10:30 |
Vertical InGaAs MOSFET with HfO2 gate |
Jun Hirai・Tomoki Kususaki・Shunsuke Ikeda・○Yasuyuki Miyamoto(Tokyo Tech) |
|
10:30-10:45 |
Break ( 15分 ) |
6月29日(金) 午前 Widegap and Nanowire Devices 10:45 - 12:15 |
(75) |
10:45-11:00 |
ICPCVD SiO2 for AlGaN/GaN MISHFET application |
○Bong-Ryeol Park・Jae-Gil Lee・Hyungtak Kim・Chun-Hyung Cho・Ho-Young Cha(Hongik Univ.) |
(76) |
11:00-11:15 |
Improved current stability in multi-mesa-channel AlGaN/GaN HEMTs |
○Kota Ohi・Tamotsu Hashizume(Hokkaido Univ.) |
(77) |
11:15-11:30 |
Fabrication and Characterization of Asymmetric-Gate GaAs Nanowire Transistors for Electrical Brownian Ratchet |
○Takayuki Tanaka・Yuki Nakano・Toru Muramatsu・Seiya Kasai(Hokkaido Univ.) |
(78) |
11:30-12:00 |
[招待講演]Carbon nanotube-based plastic electronics |
○Yutaka Ohno(Nagoya Univ., Aalto Univ.)・Dong-ming Sun・Kentaro Higuchi(Nagoya Univ.)・Marina Y. Timmermans・Antti Kaskela・Albert G. Nasibulin(Aalto Univ.)・Shigeru Kishimoto(Nagoya Univ.)・Esko I. Kauppinen(Aalto Univ.)・Takashi Mizutani(Nagoya Univ.) |
(79) |
12:00-12:15 |
Solution-based high-frequency field-effect transistors with purified semiconductor carbon nanotubes |
○Masaki Inagaki・Kensuke Hata・Kazunari Shiozawa・Yasumitsu Miyata・Yutaka Ohno・Shigeru Kishimoto・Hisanori Shinohara・Takashi Mizutani(Nagoya Univ.) |
|
12:15-12:30 |
Break ( 15分 ) |
6月29日(金) 午後 Closing session 12:30 - 12:40 |
|
12:30-12:40 |
Closing Remarks ( 10分 ) |
6月28日(木) 午前 Poster Session 10:40 - 12:00 |
(80) |
10:40-12:00 |
[ポスター講演]Rigorous Design for Gate-Dielectric and n-Pocket Region of Tunneling Field-Effect Transistors and Its High Performances. |
○Jae Hwa Seo・Jae Sung Lee・Yun Soo Park・Jung-Hee Lee・In Man Kang(Kyunpook Nat'l Univ.) |
(81) |
10:40-12:00 |
[ポスター講演]Dependence of Schottky barrier height on the junction size of bcc-metal/n-Ge(111) contacts |
○Hirotaka Yoshioka・Kenji Kasahara・Toshihiro Nishimura・Shinya Yamada・Masanobu Miyao・Kohei Hamaya(Kyushu Univ.) |
(82) |
10:40-12:00 |
[ポスター講演]Effect of hydrofluoric acid treatment on InAlN surfaces |
○Takuma Nakano・Masamichi Akazawa(Hokkaido Univ.) |
(83) |
10:40-10:55 |
[ポスター講演]The surface morphology and electrical properties of NiO with various RF power and O2/(Ar+O2) gas mixture |
○Jonghun Kim・Gyohun Koo・Changju Lee・Sungho Hahm(Kyungpook National Univ.)・Youngchul Jung(Gyeongju Univ.)・Yougsoo Lee(Kyungpook National Univ.) |
(84) |
10:40-12:00 |
[ポスター講演]Mold transfer processed organic light emitting diodes using patterned conductive polymer electrode |
○Hyun Jun Lee・Young Wook Park・Tae Hyun Park・Eun Ho Song(Korea Univ.)・Se Joong Shin(Korea univ.)・Hakkoo Kim・Kyung bok Choi・Ju Hyun Hwang(Korea Univ.)・Jinwoo Lee(Micobiomed. Ltd)・Jinnil Choi(Hanbat National Univ.)・Byeong-Kwon Ju(Korea Univ.) |
(85) |
10:40-12:00 |
[ポスター講演]Development of scanning nano-SQUIDs for local magnetic imaging. |
○Yusuke Shibata(Tsukuba Univ.)・Ryosuke Ishiguro(Tokyo Univ. of Science)・Hiromi Kashiwaya・Satoshi Kashiwaya(AIST)・Hideaki Takayanagi(Tokyo Univ. of Science/NIMS)・Shintaro Nomura(Tsukuba Univ.) |
(86) |
10:40-12:00 |
[ポスター講演]Degradation Characteristics of high voltage AlGaN/GaN-on-Si Heterostructure FETs |
Shinhyuk Choi・○Hoonsang Yoon・Dongmin Keum・Jae-Gil Lee・Ho-Young Cha・Hyungtak Kim(Hongik Univ.) |