| |
09:30-09:40 |
委員長挨拶 （ 10分 ） |
6月30日(水) 午前 -Plenary Session 1-
09:40 - 10:30 |
| (1) |
09:40-10:20 |
［基調講演］Challenge for electromechanical logic systems using compound semiconductor heterostructures |
○Hiroshi Yamaguchi・Imran Mahboob・Hajime Okamoto・Koji Onomitsu（NTT） |
| |
10:20-10:30 |
休憩 （ 10分 ） |
6月30日(水) 午前 -Session 1A : Emerging Device Technology 1-
10:30 - 14:25 |
| (1) |
10:30-10:55 |
［招待講演］Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics |
○Woo Young Choi（Sogang Univ.） |
| (2) |
10:55-11:20 |
［招待講演］Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer |
Young Su Kim・Min Ho Kang（National Nanofab Center）・Kang Suk Jeong（Chungnam National Univ.）・Jae Sub Oh・Dong Eun Yoo（National Nanofab Center）・Hi Deok Lee・○Ga-Won Lee（Chungnam National Univ.） |
| (3) |
11:20-11:45 |
［招待講演］Piezoelectric material based passive RFID tags |
○Hyunchul Bae・Jaekwon Kim・Jinwook Burm（Sogang Univ.） |
| |
11:45-12:00 |
休憩 （ 15分 ） |
| (4) |
12:00-12:25 |
［招待講演］Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors |
○Masanobu Miyao（Kyushu Univ.）・Kohei Hamaya（Kyushu Univ./JST） |
| (5) |
12:25-12:50 |
［招待講演］Toward high-efficiency thin-film solar cells using semiconducting BaSi2 |
○Takashi Suemasu・Mitsutaka Saito・Atsushi Okada・Katsuaki Tou・Ajimal Khan（Univ. of Tsukuba.）・Noritaka Usami（Tohoku Univ.） |
| (6) |
12:50-13:15 |
［招待講演］Applications of Smart Cut(TM) Technologies to III-V Based Engineered Substrates |
○Makoto Yoshimi（Soitec） |
| |
13:15-14:25 |
昼食 （ 70分 ） |
6月30日(水) 午後 -Session 2A : Memory 1-
14:25 - 15:40 |
| (1) |
14:25-14:40 |
A New Cone-Type 1T DRAM Cell |
○Gil Sung Lee・Doo-Hyun Kim・Jang-Gn Yun・Jung Hoon Lee・Yoon Kim・Jong-Ho Lee・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.） |
| (2) |
14:40-14:55 |
Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory |
○Jong-Dae Lee・Hyun-Min Seung・Kyoung-Cheol Kwon・Jea-Gun Park（Hanyang Univ.） |
| (3) |
14:55-15:10 |
The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure |
○Guobin Wei・Yuta Goto・Akio Ohta・Katsunori Makihara・Hideki Murakami・Seiichiro Higashi・Seiichi Miyazaki（Hiroshima Univ.） |
| (4) |
15:10-15:25 |
Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect |
○Doo-Hyun Kim・Gil Sung Lee・Seongjae Cho・Jung Hoon Lee・Jang-Gn Yun・Dong Hua Li・Yoon Kim・Se Hwan Park・Won Bo Shim・Wandong Kim・Byung-Gook Park（Seoul National Univ.） |
| |
15:25-15:40 |
休憩 （ 15分 ） |
6月30日(水) 午後 -Session 3A : Emerging Device Technology 2-
15:40 - 17:25 |
| (1) |
15:40-15:55 |
Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode |
○Donghyun Kim・Jaewook Jeong・Yongtaek Hong（Seoul National Univ.） |
| (2) |
15:55-16:10 |
Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer |
○Young uk Song・Shun-ichiro Ohmi（Tokyo Inst. of Tech.） |
| (3) |
16:10-16:25 |
Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures |
○Safumi Suzuki・Kiyohito Sawada・Atsushi Teranishi・Masahiro Asada（Tokyo Inst. of Tech.）・Hiroki Sugiyama・Haruki Yokoyama（NTT） |
| (4) |
16:25-16:40 |
Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes |
○Nobuhiko Tanaka・Mitsufumi Saito・Michihiko Suhara（Tokyo Metro. Univ.） |
| (5) |
16:40-16:55 |
Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors |
○Min Jin Lee・Woo Younhg Choi（Sogang Univ.） |
| (6) |
16:55-17:10 |
A design of Novel IGBT with Oblique Trench Gate |
Juhyun Oh・Dae Hwan Chun（Koria Univ.）・Eui Bok Lee（Koria Univ./KIST）・○Young Hwan Kim・Chun Keun Kim（KIST）・Byeong Kwon Ju・Man Young Sung（Koria Univ.）・Yong Tae Kim（KIST） |
| (7) |
17:10-17:25 |
Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects |
○Yong Tae Kim（KIST）・Eui Bok Lee（Koria Univ./KIST）・Young Hwan Kim・Chun Keun Kim（KIST）・Byeong Kwon Ju（Koria Univ.） |
6月30日(水) 午後 -Session 2B : Graphene and ?-?s-
14:25 - 16:30 |
| (1) |
14:25-14:50 |
［招待講演］Synthesis of wafer scale graphene layer for future electronic devices |
○Byung Jin Cho・Jeong Hun Mun（KAIST） |
| (2) |
14:50-15:15 |
［招待講演］Graphene channel FET: A New Candidate for High-Speed Devices |
○Tetsuya Suemitsu（Tohoku Univ.） |
| (3) |
15:15-15:30 |
Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors |
○J. S. Hwang・H. T. Kim（Korea Univ.）・J. H. Lee・D. M. Whang（Korea Univ./Sungkyunkwan Univ.）・S. W. Hwang（Korea Univ.） |
| (4) |
15:30-15:45 |
Fabrication of InP/InGaAs DHBTs with buried SiO2 wires |
○Naoaki Takebe・Takashi Kobayashi・Hiroyuki Suzuki・Yasuyuki Miyamoto・Kazuhito Furuya（Tokyo Inst. of Tech.） |
| (5) |
15:45-16:00 |
Reliability study on the emitter-base junction for high-speed sub-micron InP HBTs |
○Yoshino K. Fukai・Kenji Kurishima・Norihide Kashio・Shoji Yamahata（NTT Photonics Labs.） |
| (6) |
16:00-16:15 |
Electrochemical formation of InP porous structures for their application to photoelectric conversion devices |
○Hiroyuki Okazaki・Taketomo Sato・Naoki Yoshizawa・Tamotsu Hashizume（Hokkaido Univ） |
| |
16:15-16:30 |
休憩 （ 15分 ） |
6月30日(水) 午後 -Session 3B : High Speed and High Frequency Applications 1-
16:30 - 17:30 |
| (1) |
16:30-16:45 |
50-Gbit/s MUX/DEMUX IC modules using feed-trough type metal-wall package technique |
○Satoshi Tsunashima・Michihiro Hirata・Koichi Murata（NTT Corp.） |
| (2) |
16:45-17:00 |
94-GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs |
○Yong-Hyun Baek・Sang-Jin Lee・Tae-Jong Baek・Seok-Gyu Choi・Min Han・Dong-Sik Ko・Jin-Koo Rhee（Dongguk Univ.） |
| (3) |
17:00-17:15 |
A Sub-Harmonic RF Transmitter Architecture with Simultaneous Power Combination and LO Leakage Cancellation |
○Bongsub Song（Sogang Univ.）・Dohyung Kim（Samsung Electronics）・Jinwook Burm（Sogang Univ.） |
| (4) |
17:15-17:30 |
RF Interconnect Technology for On-Chip and Off-Chip Communication |
○Jongsun Kim（Hongik Univ.）・B. Byun・M.Frank Chang（Univ. of California） |
7月1日(木) 午前 -Plenary Session 2-
09:30 - 10:20 |
| (1) |
09:30-10:10 |
［基調講演］Future perspective for the mainstream CMOS technology and their contribution to green technologies |
○Hiroshi Iwai（Tokyo Inst. of Tech.） |
| |
10:10-10:20 |
休憩 （ 10分 ） |
7月1日(木) 午前 -Session 4A : Channel Engineering-
10:20 - 11:50 |
| (1) |
10:20-10:45 |
［招待講演］High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility |
○Jungwoo Oh・J. Huang・I. Ok・S. H. Lee・P. D. Kirsch・R. Jammy・Hi-Deok Lee（SEMATECH） |
| (2) |
10:45-11:10 |
［招待講演］III-V/Ge CMOS technologies and heterogeneous integrations on Si platform |
○Shinichi Takagi・Mitsuru Takenaka（Univ. of Tokyo.） |
| (3) |
11:10-11:35 |
［招待講演］Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport |
○Masumi Saitoh・Yukio Nakabayashi（Toshiba）・Ken Uchida（Tokyo Inst. of Tech.）・Toshinori Numata（Toshiba） |
| |
11:35-11:50 |
休憩 （ 15分 ） |
7月1日(木) 午前 -Session 5A : Emerging Device Technology 3-
11:50 - 13:05 |
| (4) |
11:50-12:15 |
［招待講演］Si single-dopant devices and their characterization |
○Michiharu Tabe・Daniel Moraru・Earfan Hamid・Miftahul Anwar・Arief Udhiarto・Ryusuke Nakamura・Sakito Miki・Takeshi Mizuno（Shizuoka Univ.） |
| (5) |
12:15-12:40 |
［招待講演］Investigation on fabrication of nanoscale patterns using laser interference lithography |
○Jinnil Choi・Jung Ho・Ki-Young Dong・Eun-Mi Park・Byeong-Kwon Ju（Korea Univ.） |
| (6) |
12:40-13:05 |
［招待講演］Bottom-up synthesis of metal-free elementary semiconductor nanowires |
○Dongmok Whang（Sungkyunkwan Univ.）・Sung Woo Hwang（Koria Univ.） |
7月2日(金) 午前 -Session 6A : TFTs and Sensors-
09:30 - 11:15 |
| (1) |
09:30-09:45 |
Fabrication of Oxide Thin Film Transistor based on SOG dielectric and solution ZnO |
○Jung Ho Park・Jinnil Choi・Seongpil Chang・Ki-Young Dong・Eun-Mi Park・Byeong-Kwon Ju（Univ. of Korea） |
| (2) |
09:45-10:00 |
Device Simulation of Amorphous Indium-Gallium-Zinc-Oxide Thin Film transistors with various interfacial Dielectric layers |
○Hyo-seong Seong・Ji-hoon Son・Woo-sung Kim・Hong-seung Kim（Korea Maritime Univ.）・Woo-seok Cheong（ETRI）・Nak-won Jang（Korea Maritime Univ.） |
| (3) |
10:00-10:15 |
Acivation behaviour for doped Si films after laser or furnace annealing |
Takashi Noguchi・○Toshiharu Suzuki（Univ. of Ryukyus） |
| (4) |
10:15-10:30 |
Strain effects in resistor stress sensor fabricated on (001) silicon and their influences on the determination of piezoresistive coefficients |
○Chun-Hyung Cho・Ho-Young Cha（Hongik Univ.） |
| (5) |
10:30-10:45 |
Fabrication of gas sensor using pd doped SnO2 nanotubes |
○Ki-Young Dong・In-Sung Hwang・Dae-Jin Ham・Jinnil Choi・Jung-Ho Park・Jong-Heun Lee・Byeong-Kwon Ju（Korea Univ.） |
| (6) |
10:45-11:00 |
Analysis of Transfer Gate in CMOS Image Sensor |
○Seonghyung Park・Hyuk-Min Kwon・Jung-Deuk Bok・In-Shik Han・Woonil Choi・Hi-Deok Lee（Chungnam National Univ） |
| |
11:00-11:15 |
休憩 （ 15分 ） |
7月2日(金) 午前 -Session 7A : Gate Oxides-
11:15 - 14:15 |
| (1) |
11:15-11:30 |
Interaction of bis-diethylaminosilane with hydroxylized Si (001) surface for SiO2 thin-film growth using density functional theory |
○Seung-Bin Baek・Dae-Hee Kim（Korea Univ. of Tech. and Edu.）・Yong-Chan Jeong（ASM Genitech）・Yeong-Cheol Kim（Korea Univ. of Tech. and Edu.） |
| (2) |
11:30-11:45 |
Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta2O5 gate stacks |
○Hoon-Ki Lee・Jagadeesh Chandra・Kyu-Hwan Shim（Chonbuk National Univ.）・Hyung-Joong Yun・Jouhahn Lee（KBSI）・Chel-Jong Choi（Chonbuk National Univ.） |
| (3) |
11:45-12:00 |
Modulation of PtSi work function by alloying with low work function metal |
○Jun Gao・Jumpei Ishikawa・Shun-ichiro Ohmi（Tokyo Inst. of Tech.） |
| (4) |
12:00-12:15 |
The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter |
○Takeshi Sasaki・Takuya Imamoto・Tetsuo Endoh（Tohoku Univ.） |
| (5) |
12:15-12:30 |
High Integrity Gate Insulator Films on Atomically Flat Silicon Surface |
○Xiang Li・Rihito Kuroda・Tomoyuki Suwa・Akinobu Teramoto・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.） |
| (6) |
12:30-12:45 |
Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities |
○Akio Ohta・Daisuke Kanme・Hideki Murakami・Seiichiro Higashi・Seiichi Miyazaki（Hiroshima Univ.） |
| (7) |
12:45-13:00 |
Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET |
○Takuya Imamoto・Takeshi Sasaki・Tetsuo Endoh（Tohoku Univ.） |
| |
13:00-14:15 |
昼食 （ 75分 ） |
7月2日(金) 午後 -Session 8A : Memory 2-
14:15 - 16:50 |
| (1) |
14:15-14:40 |
［招待講演］High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications |
○Yung-Chun Wu・Min-Feng Hung・Jiang-Hung Chen・Lun-Chun Chen・Ji-Hong Jiang（National Tsing Hua Univ. Taiwan） |
| (2) |
14:40-15:05 |
［招待講演］A Single Element Phase Transition Memory |
Sang-Hyeon Lee・○Moonkyung Kim（Cornell Univ.）・Byung-ki Cheong（KIST）・Jooyeon Kim（Ulsan College）・Jo-Won Lee（National Program for Tera-level Nano Devices, Korea）・Sandip Tiwari（Cornell Univ.） |
| (3) |
15:05-15:20 |
Impact of Floating Body type DRAM with the Vertical MOSFET |
○Yuto Norifusa・Tetsuo Endoh（Tohoku Univ./JST） |
| |
15:20-15:35 |
休憩 （ 15分 ） |
| (4) |
15:35-15:50 |
Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect |
○Yoon Kim・Jang-Gn Yun・Jung Hoon Lee・Gil Sung Lee・Se Hwan Park・Jong-Ho Lee・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.） |
| (5) |
15:50-16:05 |
Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories |
Akira Otake・○Keita Yamaguchi・Kenji Shiraishi（Univ. of Tsukuba.） |
| (6) |
16:05-16:20 |
The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure |
○Moon-Sik Seo（Tohoku Univ.）・Tetsuo Endoh（Tohoku Univ./JST） |
| (7) |
16:20-16:35 |
New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory Cells |
○Seung Hyeun Roh・Woo Young Choi（Sogang Univ.） |
| |
16:35-16:40 |
休憩 （ 5分 ） |
| |
16:40-16:50 |
委員長挨拶 （ 10分 ） |
7月2日(金) 午前 -Session 6B : Wide Bandgap Materials and Devices, Power Devices-
09:30 - 11:35 |
| (1) |
09:30-09:55 |
［招待講演］Development of Low on-resistance SiC Trench MOSFET and other SiC power devices |
○Yuki Nakano・Ryota Nakamura・Katsuhisa Nagao・Takashi Nakamura・Hidemi Takasu（ROHM） |
| (2) |
09:55-10:10 |
Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors |
○Jaegil Lee・Chun-Hyung Cho・Ho-Young Cha（Hongik Univ.） |
| (3) |
10:10-10:35 |
［招待講演］InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD |
○Makoto Miyoshi・Shigeaki Sumiya・Mikiya Ichimura・Tomohiko Sugiyama・Sota Maehara・Mitsuhiro Tanaka（NGK）・Takashi Egawa（Nagoya Inst. of Tech.） |
| (4) |
10:35-10:50 |
A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric |
○Joseph Freedsman・Arata Watanabe・Lawrence Selvaraj・Takashi Egawa（Nagoya Inst. of Tech.） |
| (5) |
10:50-11:05 |
Characterization of deep electron levels of AlGaN grown by MOVPE |
○Kimihito Ooyama（Hokkaido Univ./SMM）・Katsuya Sugawara（Hokkaido Univ.）・Hiroyuki Taketomi・Hideto Miyake・Kazumasa Hiramatsu（Mie Univ.）・Tamotsu Hashizume（Hokkaido Univ./JST） |
| (6) |
11:05-11:20 |
Characteristics of GaN p-n diode with damage layer induced by ICP plasma process |
○Tsutomu Uesugi・Tetsu Kachi（Toyota Central R&D Labs.）・Tamotsu Hashizume（Hokkaido Univ.） |
| |
11:20-11:35 |
休憩 （ 15分 ） |
7月2日(金) 午前 -Session 7B : Si IC and Circuit Technology-
11:35 - 14:15 |
| (1) |
11:35-11:50 |
The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation |
○Tetsuo Endoh・Masashi Kamiyanagi・Masakazu Muraguchi・Takuya Imamoto・Takeshi Sasaki（Tohoku Univ.） |
| (2) |
11:50-12:05 |
Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation |
○Masashi Kamiyanagi・Takuya Imamoto・Takeshi Sasaki・Hyoungjun Na・Tetsuo Endoh（Tohoku Univ.） |
| (3) |
12:05-12:20 |
A Non-snapback NMOS ESD Clamp Circuit using Gate-Coupled Scheme with Isolated Well in a Bipolar-CMOS-DMOS Process |
○Jae-Young Park・Dae-Woo Kim・Young-San Son・Jong-Chan Ha・Jong-Kyu Song・Chang-Soo Jang・Won-Young Jung（Dongbu HiTek） |
| (4) |
12:20-12:35 |
A Precision Floating-Gate Mismatch Measurement Technique for Analog Applications |
○Won-Young Jung・Jong Min Kim・Jin-Soo Kim・Taek-Soo Kim（Dongbu HiTek） |
| (5) |
12:35-12:50 |
A Physical-Based Modeling for Accurate Wide-Width LDMOS |
○Won-Young Jung・Jong-Sub Lee・Eun-Jin Kim・Ki-Jung Park・San-Hun Kwak・Jin-Soo Kim・Taek-Soo Kim（Dongbu HiTek） |
| (6) |
12:50-13:05 |
Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells |
○Tetsuo Endoh・Yasuhiko Suzuki・Takuya Imamoto・Hyoungjun Na（Tohoku Univ.） |
| |
13:05-14:15 |
昼食 （ 70分 ） |
7月2日(金) 午後 -Session 8B : High Speed and High Frequency Applications 2-
14:15 - 15:30 |
| (7) |
14:15-14:30 |
A V-band Common-Source Low Noise Amplifier in 0.13 μm RFCMOS Technology |
○Sung-Jin Kim・Dong-Hyun Kim・Jae-Sung Rieh（Korea Univ.） |
| (8) |
14:30-14:45 |
A 0.18 um CMOS process 10-PAM transceiver for 10 Gigabit Ethernet |
○Nayeon Cho・J K Jeong・J J Lee・J Burm（Sogang Univ.） |
| (9) |
14:45-15:00 |
A Switched-Capacitor Integrator Using Dynamic Source-Follower Amplifiers |
○Ryoto Yaguchi・Fumiyuki Adachi・Takao Waho（Sophia Univ.） |
| (10) |
15:00-15:15 |
A Basic Study on RF Characteristics of Short Wavelength Comb-type Transmission Line on MMIC |
○Jang-Hyeon Jeong・Young-Bae Park・Bo-Ra Jung・Jeong-Gab Ju・Eui-Hoon Jang・Chi-Hong Min・Seong-Il Hong・Suk-Youb Kang・Hong Seung Kim・Young Yun（Korea Maritime Univ.） |
| |
15:15-15:30 |
休憩 （ 15分 ） |
7月2日(金) 午後 -Session 9B : Nano-Scale devices and Physics-
15:30 - 16:40 |
| (1) |
15:30-15:45 |
High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance |
○Yukihisa Nakao・Rihito Kuroda・Hiroaki Tanaka・Akinobu Teramoto・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.） |
| (2) |
15:45-16:00 |
Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET |
○Masakazu Muraguchi・Tetsuo Endoh（Tohoku Univ./JST） |
| (3) |
16:00-16:15 |
Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current |
○Joung-eob Lee・Kwon-Chil Kang・Jung Han Lee・Kim Kyung Wan・Byung-Gook Park（Seoul National Univ.） |
| (4) |
16:15-16:30 |
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor |
○Masakazu Muraguchi（Tohoku Univ.）・Yoko Sakurai・Yukihiro Takada・Shintaro Nomura・Kenji Shiraishi（Univ. of Tsukuba.）・Mitsuhisa Ikeda・Katsunori Makihara・Seiichi Miyazaki（Hiroshima Univ.）・Yasuteru Shigeta（Univ. of Hyogo）・Tetsuo Endoh（Tohoku Univ.） |
| |
16:30-16:40 |
休憩 （ 10分 ） |
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