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| Chair |
|
Yuzou Oono (Univ. of Tsukuba) |
| Vice Chair |
|
Tatsuya Kunikiyo (Renesas) |
| Secretary |
|
Rihito Kuroda (Tohoku Univ.) |
| Assistant |
|
Tadashi Yamaguchi (Renesas) |
|
|
|
| Chair |
|
Naoki Matsuda (AIST) |
| Vice Chair |
|
Tatsuo Mori (Aichi Inst. of Tech.) |
| Secretary |
|
Akihiro Kohno (NTT), Takao Someya (Univ. of Tokyo) |
| Assistant |
|
Hirotake Kajii (Osaka Univ.), Dai Taguchi (Tokyo Inst. of Tech.) |
|
| Conference Date |
Fri, Apr 8, 2016 10:55 - 17:40
Sat, Apr 9, 2016 09:30 - 12:30 |
| Topics |
Thin film devices, etc |
| Conference Place |
Okinawa Prefectural Museum & Art Museum, Museum Lecture Room |
| Address |
3-1-1 Omoromachi, Naha City, Okinawa 900-0006 |
| Transportation Guide |
By monorail: 10-minute walk from Omoromachi Station
http://www.museums.pref.okinawa.jp/english/visitors/index.html |
Contact
Person |
Taizoh Sadoh, Kyushu University
+81-92-802-3737 |
Fri, Apr 8
10:55 - 17:40 |
| (1) |
10:55-11:20 |
Effect of surface modification on immobilization and direct electron transfer reaction of cytochrome c on solid/liquid interfaces |
Naoki Matsuda, Hirotaka Okabe (AIST) |
| (2) |
11:20-12:00 |
[Invited Talk]
Effect of MoO3 Cathode Buffer on the Performance of Organic Solar Cells |
Hiroshi Kageyama, Shotaro Hayashi, Daichi Hasebe, Iwamichi Ishikawa, Yusuke Nakamoto (Univ. of the Ryukyus), Taichiro Morimune (Natl. Inst. Technol., Kagewa College) |
| (3) |
12:00-12:40 |
[Invited Talk]
OFET Device Characteristics utilizing Low Work-function Metal Interface Control Layer |
Shun-ichiro Ohmi, Yasutaka Maeda, Syu Furuyama, Mizuha Hiroki (Tokyo Tech) |
| |
12:40-13:40 |
Break ( 60 min. ) |
| (4) |
13:40-14:20 |
[Invited Talk]
Blockade and Staircase Phenomena of Holes in Mesoscopic Scale λ-Deoxyribonucleic Acid (DNA)/SiO2/Si Structure |
Naoto Matsuo, Tadao Takada, Akira Heya, Kazushuge Yamana (Univ Hyogo), Tadashi Sato, Shin Yokoyama (Hirosima Univ), Yasuhisa Omura (Kansai Univ) |
| (5) |
14:20-15:00 |
[Invited Talk]
Growth and characterization of Sn-containing group-IV semiconductor thin film |
Yosuke Shimura (Sizuoka Univ.), Wakana Takeuchi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
| (6) |
15:00-15:25 |
Formation of GeSn Thin-Film-Crystals with high Sn concentration (>10%) on insulator |
Kenta Moto, Ryo Matsumura, Taizo Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) |
| |
15:25-15:35 |
Break ( 10 min. ) |
| (7) |
15:35-16:00 |
Low-temperature formation of Sn-doped Ge on insulating substrate by metal-induced lateral crystallization |
Takatsugu Sakai, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) |
| (8) |
16:00-16:25 |
Non-thermal energy utilized low temperature solid phase crystallization of amorphous Ge on SiO2 substrate |
Kinta Kusano, Kazuki Kudo, Kodai Tomouchi, Taisei Sakaguchi, Kenta Moto (NIT, Kumamoto), Shinichi Motoyama, Yutaka Kusuda, Masahiro Furuta (SAMCO), Nobuyuki Naka, Tomoko Numata (HORIBA), Kenichiro Takakura, Isao Tsunoda (NIT, Kumamoto) |
| (9) |
16:25-16:50 |
Electrical Characterization of Germanium films Crystallized by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation and Fabrication of High-Performance Thin Film Transistors. |
Taichi Nakatani, Hiromu Harada, Seiichiro Higashi (Hiroshima Univ.) |
| (10) |
16:50-17:15 |
Multi-shots ELA of sputtered Si film and TFT with metal source-drain structure |
Taisei Harada, Futa Gakiya, Takuya Ashitomi, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus), Kanji Noda, Akira Suwa (GiGAPHOTON Inc.), Hiroshi Ikenoue (Kyusyu Univ.), Tetsuo Okuyama (TOYOBO Company, Limited) |
| (11) |
17:15-17:40 |
High Photoconductive Silicon Thin-film formed by Blue Laser Diode Annealing for System on Panel |
Koswaththage Charith Jayanada, Kota Nakao, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus) |
Sat, Apr 9
09:30 - 12:30 |
| (12) |
09:30-10:10 |
[Invited Talk]
Nonvolatile Memory Applications Using Oxide Thin-Film Transistors |
Sung-Min Yoon, So-Jung Kim, Min-Ji Park, Da-Jeong Yun (Kyung Hee Univ.) |
| (13) |
10:10-10:50 |
[Invited Talk]
Low-temperature processed self-aligned InGaZnO thin-film transistors for flexible device applications |
Mamoru Furuta, Tatsuya Toda, Gengo Tatsuoka, Yusaku Magari (Kochi Univ. of Technol.) |
| (14) |
10:50-11:15 |
Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors
-- Influence of carrier concentration in back-channel region -- |
Daichi Koretomo, Tatsuya Toda (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Mamoru Furuta (KUT) |
| (15) |
11:15-11:40 |
Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack |
Syota Nibe, Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.) |
| (16) |
11:40-12:05 |
Effect of Low Temperature Annealing of Sputtered SiO2 for Gate Insulator in Poly-Si TFTs |
Hikaru Tamashiro, Kimihiko Imura, Tatsuya Okada, Takashi Noguchi (Univ. Ryukyu) |
| (17) |
12:05-12:30 |
An Application of Green Laser Annealing in Low-Voltage Power MOSFETs |
Yi Chen, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Invited Talk | Each speech will have 30 minutes for presentation and 10 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Taizoh SADOH (Kyushu Univ.)
Tel 092-802-3737 Fax 092-802-3724
E- :   h ed k shu-u |
| OME |
Technical Committee on Organic Molecular Electronics (OME) [Latest Schedule]
|
| Contact Address |
|
Last modified: 2016-03-04 12:12:01
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