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=============================================== Technical Committee on Lasers and Quantum Electronics (LQE) Chair: Junichi Takahara (Osaka Univ.) Vice Chair: Kosuke Nishimura (KDDI Research) Secretary: Shinsuke Tanaka (Fujitsu), Kazuue Fujita (Hamamatsu Photonics) Assistant: Yoshiaki Nishijima (Yokohama National Univ.), Nobuhiko Nishiyama (Tokyo Inst. of Tech.) =============================================== Technical Committee on Electron Devices (ED) Chair: Hiroki Fujishiro (Tokyo Univ. of Science) Vice Chair: Seiya Sakai (Hokkaido Univ.) Secretary: Toshiyuki Oishi (Saga Univ.), Takuya Tsutsumi (NTT) Assistant: Masatoshi Koyama (Osaka Inst. of Tech.), Yoshitugu Yamamoto (Mitsubishi Electric) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Yuichi Nakamura (Toyohashi Univ. of Tech.) Vice Chair: Hideki Nakazawa (Hirosaki Univ.) Secretary: Tomoaki Terasako (Ehime Univ.), Mayumi Takeyama (Kitami Inst. of Tech) Assistant: Yasuo Kimura (Tokyo Univ. of Tech.), Fumihiko Hirose (Yamagata Univ.), Noriko Bamba (Shinshu Univ.) DATE: Thu, Nov 24, 2022 10:00 - 16:45 Fri, Nov 25, 2022 10:30 - 15:15 PLACE: WINC AICHI (Aichi Industry & Labor Center) Room 1105(4-4-38 Meieki, Nakamura-ku, Nagoya, Aichi 450-0002, Japan. A five-minute walk from JR Nagoya Station Sakura-dori Exit and a two-minute walk from Unimall Underground Mall Exit 5.https://www.winc-aichi.jp/en/. Tomoaki Terasako) TOPICS: ---------------------------------------- Thu, Nov 24 (10:00 - 11:15) Chair: Yuichi Nakamura (Toyohashi Univ. Technol.)) ---------------------------------------- ----- Opening Address ( 5 min. ) ----- (1) 10:05 - 10:25 Application of Chemical Bath Deposited ZnO Nanorods to UV Light Detectors and Influence of CBD Solution Concentration on Their Device Properties Taichi Fujikawa, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.) (2) 10:25 - 10:45 Voltage-Current Characteristics and Optical Responses of PEDOT:PSS/ZnO Nanorods/GZO Heterojunctions Tomoaki Terasako (Ehime Univ), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.) (3) 10:45 - 11:05 CVD growth of 2D layered material g-C3N4/SnS2/graphene heterojunction Youhei Mori, Kota Matsuoka, Baskar Malathi, Atsushi Nakamura (Shizuoka Univ) ----- Break ( 10 min. ) ----- ---------------------------------------- Thu, Nov 24 AM (11:15 - 14:15) Chair: Tomoaki Terasako (Ehime University) ---------------------------------------- (4) 11:15 - 11:35 Synthesis of g-C3N4/SnS2 composites for artificial photosynthesis application Matsuoka Kota, Mori Youhei, Baskar Malathi, Nakamura Atsushi (Shizuoka Univ.) (5) 11:35 - 11:55 Semiconducting properties of electrochemically deposited Ni(OH)2 thin films Masahide Shimura, Koji Abe (Nitech) (6) 11:55 - 12:15 Development of haptic gloves for communication Ryuhei Takeda, Atsushi Nakamura, Kamen Kanev (Shizuoka Univ.) ----- Lunch Break ( 50 min. ) ----- (7) 13:05 - 13:25 Al-doped ZnO thin films deposited by sol-gel method Koji Abe, Tasuku Kubota (NITech) (8) 13:25 - 13:45 Development of Flexible and Conductive Nanocarbon-based Fibers by Wet Spinning Method Hikaru Kondo, Haruka Jin, Rena Kato, Tetsuo Soga, Naoki Kishi (NIT) (9) 13:45 - 14:05 Fabrication of MgSnO thin film using sol-gel method for SnS/MgSnO thin film solar cell Kengo Inagaki, Yasushi Takano, Keito Shioda (Shizuoka Univ.) ----- Break ( 10 min. ) ----- ---------------------------------------- Thu, Nov 24 PM (14:15 - 15:45) Chair: Yoshitsugu Yamamoto (Mitsubishi Elec. Corp. ) ---------------------------------------- (10) 14:15 - 14:35 Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Hiroki Imabayashi (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara (Sumitomo Chemical Co, Ltd.), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) (11) 14:35 - 14:55 Evaluation of Fe Induced Trap in GaN HEMTs using Low-Frequency Y22 Measurement Taiki Nishida, Toshiyuki Oishi (Saga Univ.), Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Elec. Corp.) (12) 14:55 - 15:15 Fabrication and characterization of AlGaInN/GaN HEMTs on Single-Crystal AlN Substrate SakuraTanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) (13) 15:15 - 15:35 Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs Yusuke Iida, Akira Mase, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi (NITech) ----- Break ( 10 min. ) ----- ---------------------------------------- Thu, Nov 24 PM (15:45 - 16:45) Chair: Toshiharu Kubo (Nagoya Inst. Technol.) ---------------------------------------- (14) 15:45 - 16:05 Estimation of electrical characteristics of surface treatment after recess structure formation in AlGaN/GaN MIS-HEMTs Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech) (15) 16:05 - 16:25 AlGaN/GaN vertical devices on Si substrate with highly resistive strained layer superlattice Takaya Koike, Koki Hayashi, Ryosuke Hayafuji, Toshiharu Kubo, Takashi Egawa (NIT) (16) 16:25 - 16:45 Effects of AlN/AlGaN interfacial control layers in AlN/AlGaN/GaN MIS devices Yuchen Deng, Hibiki Anaba, Hideyuki Matsuyama, Toshi-kazu Suzuki (JAIST) ---------------------------------------- Fri, Nov 25 (10:30 - 13:00) Chair: Hideki Hirayama (RIKEN) ---------------------------------------- ----- Awarding Ceremony for 2021 LQE Encouragement Award ( 5 min. ) ----- (17) 10:35 - 11:05 [Encouragement Talk] Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) (18) 11:05 - 11:25 Simulation of exciton dynamics of III-nitrides and experimental analysis -- Effects of phonons and dependence on temperature -- Masaya Chizaki, Kensuke Oki, Yoshihiro Ishitani (Chiba Univ.) (19) 11:25 - 11:45 Growth temperature dependence of semipolar {11-22} AlInN/GaInN Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.) ----- Lunch Break ( 75 min. ) ----- ---------------------------------------- Fri, Nov 25 PM (13:00 - 14:10) Chair: Makoto Miyoshi (Nagoya Inst. Technol.) ---------------------------------------- (20) 13:00 - 13:20 LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) (21) 13:20 - 13:40 Fabrication of AlGaN-based UV-B semiconductor lasers and their device performance Ayumu Yabutani, Ryota Hasegawa, Ryosuke kondo, Eri Matsubara (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Yoshito Jin, Tatsuya Matsumoto, Masamitsu Toramaru (JSW), Hironori Torii (JSW afty), Daichi Imai, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.) (22) 13:40 - 14:00 Efficiency Improvement of 230 nm-band AlGaN based LEDs with Al Compositional Graded Layer Noritoshi Maeda, Yukio Kashima, Eriko Matsuura (RIKEN), Yasushi Iwaisako (NT), Hideki Hirayama (RIKEN) ----- Break ( 10 min. ) ----- ---------------------------------------- Fri, Nov 25 PM (14:10 - 15:15) Chair: Atsushi Yamaguchi (Kanazawa Inst. Tecnol.) ---------------------------------------- (23) 14:10 - 14:30 Growth and device application of InGaN-based nanocolumn crystals using various crystal planes Jumpei Yamada, Ai Mizuno, Rie Togashi, Ichirou Nomura, Katsumi Kishino (Sophia Univ.) (24) 14:30 - 14:50 (See Japanese page.) (25) 14:50 - 15:10 Development of Semiconductor Incoherent Light Source for Forward Raman Amplifier Junji Yoshida (Furukawa Electric), Naoya Hojo (FFOD), Yasuto Tatamida, Tomohiro Ohisi, Shigehiro Takasaka, Takuya Kokawa, Satoru Ichihara, Ryuichi Sugisaki, Toshio Kimura (Furukawa Electric) ----- Closing Remarks ( 5 min. ) ----- # Information for speakers General Talk will have 15 minutes for presentation and 5 minutes for discussion. Encouragement Talk will have 20 minutes for presentation and 10 minutes for discussion. === Technical Committee on Lasers and Quantum Electronics (LQE) === # SECRETARY: Kazuue Fujita (Hamamatsu Photonics) TEL +81-53-586-7111 E-mail: k     crl hpk Shinsuke Tanaka (Fujitsu) TEL +080-2203-4544 E-mail:  n-    # ANNOUNCEMENT: # Homepage of LQE is http://www.ieice.org/~lqe/jpn/welcome.html === Technical Committee on Electron Devices (ED) === # FUTURE SCHEDULE: Thu, Dec 8, 2022 - Fri, Dec 9, 2022: 12/8 Nagoya University, 12/9 WINC AICHI [Fri, Oct 14], Topics: Applications of electron and ion beam Mon, Dec 19, 2022 - Tue, Dec 20, 2022: [Fri, Oct 14] Fri, Jan 27, 2023: Kikai-Shinko-Kaikan Bldg. [Thu, Nov 17] # SECRETARY: Junji Kotani (Fujitsu） TEL : 046-250-8243 E-mail :   jun-01 Takuya Tsutsumi (NTT) TEL: 046-240-3180 E-mail:      === Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Fri, Dec 9, 2022 (tentative): [Tue, Oct 18] Tue, Feb 28, 2023: Tokyo University of Technology [Fri, Jan 13] Last modified: 2022-11-23 15:51:36 |
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