Fri, Jun 19 AM
09:30 - 11:50 |
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09:25-09:30 |
Opening Address ( 5 min. ) |
| (1) |
09:30-10:00 |
Material properties of Ge - Comparison with Silicon |
Kohei M. Itoh (Keio Univ.) |
| (2) |
10:00-10:20 |
Atomistic Modeling of GeO2/Ge Interface Structure by Molecular Dynamics
-- Comparison with SiO2/Si Interface -- |
Takanobu Watanabe, Tomoya Onda, Ryo Tosaka, Hideaki Yamamoto (Waseda Univ.) |
| (3) |
10:20-10:40 |
First-Principles Calculations for Interfacial Reaction during Si Oxidation |
Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.) |
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10:40-10:50 |
Break ( 10 min. ) |
| (4) |
10:50-11:20 |
Fundamental Study on GeO2/Ge Interface and its Electrical Properties |
Heiji Watanabe, Marina Saito, Shoichiro Saito, Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Tomoya Ono, Takayoshi Shimura (Osaka Univ.) |
| (5) |
11:20-11:50 |
Electrical Properties of Ge MIS Interface Defects |
Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo) |
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11:50-12:40 |
Ｌｕｎｃｈ Break ( 50 min. ) |
Fri, Jun 19 PM
12:40 - 16:40 |
| (6) |
12:40-13:00 |
Thermal Stability of Ge MOS Devices
-- Influence of Ge monoxide [GeO(II)] on Ge oxygen [GeO(g)] desorption -- |
Yoshiki Kamata (MIRAI-TOSHIBA), Akira Takashima (TOSHIBA Corp), Tsutomu Tezuka (MIRAI-TOSHIBA) |
| (7) |
13:00-13:20 |
Fermi Level Pinning at Metal/Germanium Interface and its Controllability |
Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (The Univ. of Tokyo//JST-CREST) |
| (8) |
13:20-13:40 |
Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation |
Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) |
| (9) |
13:40-14:00 |
Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical |
Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) |
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14:00-14:10 |
Break ( 10 min. ) |
| (10) |
14:10-14:30 |
Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers
-- Formation of Insulator on Ge Substrate -- |
Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.) |
| (11) |
14:30-14:50 |
Photoemission Study of Suboxides on GeO2/Ge Structure Formed by Thermal and Low Temperature Processes |
Hideki Murakami, Yoshikazu Ono, Akio Ohta, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) |
| (12) |
14:50-15:10 |
Effect of ALD-Al2O3 Layer on Interfacial Reaction between LaAlO and Ge |
Mitsuo Sakashita, Ryosuke Kato, Shinya Kyogoku, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ.) |
| (13) |
15:10-15:30 |
Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics |
Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) |
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15:30-15:40 |
Break ( 10 min. ) |
| (14) |
15:40-16:00 |
Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition |
Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.) |
| (15) |
16:00-16:20 |
Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric |
Kosuke Ohara, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC), Yukiharu Uraoka (NAIST/CREST) |
| (16) |
16:20-16:40 |
Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3. |
Hiroki Kondo, Kazuya Furuta, Hirotaka Matsui, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) |
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16:40-16:50 |
Break ( 10 min. ) |
Fri, Jun 19 PM
16:50 - 17:05 |
| (17) |
16:50-16:55 |
Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx |
Akio Ohta, Daisuke Kanme, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) |
| (18) |
16:55-17:00 |
Theoretical investigation about electronic structure of doping metal silicide |
Shinichi Sotome, Takashi Nakayama (Chiba Univ) |
| (19) |
17:00-17:05 |
Characterization of Chemical Bonding Features and Electronic States at TiO2/Pt Interface |
Yuta Goto, Daisuke Kanme, Akio Ohta, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima University) |
Fri, Jun 19 PM
17:05 - 18:05 |
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18:05-19:35 |
Banquet ( 90 min. ) |
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