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Technical Committee on Integrated Circuits and Devices (ICD)
Chair: Masafumi Takahashi (Kioxia) Vice Chair: Makoto Ikeda (Univ. of Tokyo)
Secretary: Koji Nii (TSMC), Kosuke Miyaji (Shinshu Univ.)
Assistant: Yoshiaki Yoshihara (Kioxia), Jun Shiomi (Osaka Univ.), Takeshi Kuboki (Sony Semiconductor Solutions)

DATE:
Mon, Apr 10, 2023 09:30 - 17:20
Tue, Apr 11, 2023 09:30 - 17:05

PLACE:


TOPICS:


----------------------------------------
Mon, Apr 10 AM (09:30 - 11:50)
----------------------------------------

(1) 09:30 - 09:55
[Invited Lecture]
A c-axis aligned crystalline IGZO FET and a 0.06-um2 HfO2-based capacitor 1T1C FeRAM with high voltage tolerance and 10-ns write time
Masami Endo, Numata Shiyuu, Ohshima Kazuaki, Egi Yuji, Isaka Fumito, Ohno Toshikazu, Tezuka Sachiaki, Hamada Toshiki, Furutani Kazuma, Tsuda Kazuki, Matsuzaki Takanori, Onuki Tatsuya, Murakawa Tsutomu, Kunitake Hitoshi (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Yamazaki Shunpei (SEL)

(2) 09:55 - 10:20
[Invited Lecture]
Nonvolatile Storage Cells Using FiCC for IoT Processors with Intermittent Operations
Yuki Abe, Kazutoshi Kobayashi (KIT), Jun Shiomi (Osaka Univ.), Hiroyuki Ochi (Ritsumeikan Univ.)

(3) 10:20 - 10:45
[Invited Lecture]
Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation.
Hitomi Tanaka, Yuta Aiba, Takashi Maeda, Keiichi Sawa, Fumie Kikushima, Tomoya Sanuki (KIOXIA)

----- Break ( 15 min. ) -----

(4) 11:00 - 11:25
[Invited Lecture]
A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C
Takahiro Shimoi, Ken Matsubara, Tomoya Saito, Tomoya Ogawa, Yasuhiko Taito, Yoshinobu Kaneda, Masayuki Izuna, Koichi Takeda, Hidenori Mitani, Takashi Ito, Takashi Kono (Renesas Electronics)

(5) 11:25 - 11:50
(See Japanese page.)

----------------------------------------
Mon, Apr 10 PM (13:20 - 17:20)
----------------------------------------

(6) 13:20 - 14:10
[Invited Talk]
Novel scheme of HZO/Si FeFET reservoir computing for speech recognition
Eishin Nako, Kasidit Toprasertpong, Ryosho Nakane, Mitsuru Takenaka, Shinichi Takagi (The Univ. of Tokyo)

(7) 14:10 - 15:00
(See Japanese page.)

----- Break ( 15 min. ) -----

(8) 15:15 - 16:05
[Invited Talk]
Prospects for Next-Generation Edge Computing Based on Nonvolatile Logic LSI Technology
Masanori Natsui (Tohoku Univ.)

(9) 16:05 - 16:30
[Invited Lecture]
Strong PUF Using SRAM Weak PUF-Based Secret Substitution Layer for Edge-Device Security Applications
Kunyang Liu, Hirofumi Shinohara (Waseda Univ.)

(10) 16:30 - 17:20
[Invited Talk]
A 3nm Gate-All-Around SRAM Featuring an Adaptive Dual-BL and an Adaptive Cell-Power Assist Circuit
Sangyeop Baeck (SEC)

----------------------------------------
Tue, Apr 11 AM (09:30 - 11:50)
----------------------------------------

(11) 09:30 - 09:55
[Invited Lecture]
Development of A Variation-Tolerant Processing-In-Memory Architecture Using Discharging Current Calibration
Daiki Kitagata, Shinji Tanaka, Naoya Fujita, Naoaki Irie (REL)

(12) 09:55 - 10:45
[Invited Talk]
A 4-nm 6163-TOPS/W/b 4790-TOPS/mm2/b SRAM based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update
Haruki Mori, Wei-Chang Zhao, Cheng-En Lee, Chia-Fu Lee, Yu-Hao Hsu, Chao-Kai Chuang, Takeshi Hashizume, Hao-Chun Tung, Yao-Yi Liu, Shin-Rung Wu, Kerem Akarvardar, Tan-Li Chou, Hidehiro Fujiwara, Yih Wang, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang (TSMC)

----- Break ( 15 min. ) -----

(13) 11:00 - 11:50
[Invited Talk]
1 Tb 4b/Cell 176-Tier 3D NAND Flash with 4 Independent Planes for Read
Tomoharu Tanaka (MMJ)

----------------------------------------
Tue, Apr 11 PM (13:20 - 17:05)
----------------------------------------

(14) 13:20 - 14:10
[Invited Talk]
Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating
Yuto Yakubo, Kazuma Furutani, Kouhei Toyotaka, Haruki Katagiri, Masashi Fujita, Munehiro Kozuma, Yoshinori Ando, Yoshiyuki Kurokawa (SEL), Toru Nakura (Fukuoka Univ.), Shunpei Yamazaki (SEL)

(15) 14:10 - 15:00
[Invited Talk]
NanoBridge Technology for Embedded Nonvolatile Memory
Ryusuke Nebashi, Koichiro Okamoto, Toshitsugu Sakamoto, Munehiro Tada (NBS)

----- Break ( 15 min. ) -----

(16) 15:15 - 16:05
[Invited Talk]
Development trends of embedded MRAM IP for MCU Applications
Tomoya Saito (Renesas)

(17) 16:05 - 17:05
[Keynote Address]
Game Change by Spintronics Low Power semiconductors and its contribution to a carbon-neutral society
-- from STT/SOT-MRAM to its application to IoT/AI processors --
Tetsuo Endoh (Tohoku Univ.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
Invited Lecture will have 20 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 45 minutes for presentation and 5 minutes for discussion.
Keynote Address will have 55 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by IEEE SSCS Japan Chapter and IEEE SSCS Kansai Chapter.


=== Technical Committee on Integrated Circuits and Devices (ICD) ===
# FUTURE SCHEDULE:

Tue, May 9, 2023 - Wed, May 10, 2023:
Sun, Jul 23, 2023 - Tue, Jul 25, 2023: Amakusa City Complex Kokorasu , Topics: Summer Camp

# SECRETARY:
Koji Nii (TSMC Design Technology Japan)
E-mail: ig


Last modified: 2023-04-09 22:51:22


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