Thu, Nov 27 AM
09:25 - 18:05 |
| |
09:25-09:30 |
Opening Address ( 5 min. ) |
| (1) |
09:30-09:55 |
Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy |
Hiroto Sekiguchi, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.) |
| (2) |
09:55-10:20 |
Random lasing in GaN nanocolumns |
Masaru Sakai, Katsumi Kishino, Akihiko Kikuchi, Hiroto Sekiguchi, Yuta Inose, Kazuhiro Ema, Tomi Ohtsuki (Sophia Univ.) |
| (3) |
10:20-10:45 |
A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy |
Tomonari Shioda, Yuki Tomita, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano (The Univ. of Tokyo) |
| |
10:45-10:55 |
Break ( 10 min. ) |
| (4) |
10:55-11:20 |
Growth and characterization of nonpolar and semipolar (Al,In,Ga)N films on ZnO substrates |
Atsushi Kobayashi, Kohei Ueno, Kazuma Shimomoto, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo), Hidetaka Amanai, Satoru Nagao, Hideyoshi Horie (Mitsubishi Chemical Group Science and Technology Research Center) |
| (5) |
11:20-11:45 |
Improvement of AlN-template quality for deep-UV and UV light emitters |
Tomohito Takeda, Hideaki Anzai, Hideo Kawanishi (Kogakuin) |
| (6) |
11:45-12:10 |
Growth and Characterization of M-plane InN on LiAlO2 Substrate by RF-MBE |
Yusuke Takagi, Hirokazu Nozawa, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.) |
| |
12:10-13:10 |
Lunch Break ( 60 min. ) |
| (7) |
13:10-13:35 |
Electroluminescence study of GaN based devices with several hundreds nano-scale periodic structure fabricated by nano-imprint technique |
Mitsuaki Tohno, Zhang Jing, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima), Junzo Wachi (SCIVAX Corp.) |
| (8) |
13:35-14:00 |
Reduction of reverse-bias current in GaN-based metal-oxide-semiconductor diodes operating in UV spectral region |
Tohru Honda, Shigetoshi Komiyama, Yoshihiro Mashiyama, Kenji Watanabe (Kogakuin Univ.) |
| (9) |
14:00-14:25 |
A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-Cavity |
Masao Kawaguchi, Satoshi Tamura, Masaaki Yuri (Panasonic) |
| |
14:25-14:35 |
Break ( 10 min. ) |
| (10) |
14:35-15:00 |
High-Power GaN-based Blue-Violet Laser Diodes |
Shingo Kameyama, Yasumitsu Kunou, Kyouji Inoshita, Daijiro Inoue, Yasuyuki Bessho, Takenori Goto, Tatsuya Kunisato (SANYO) |
| (11) |
15:00-15:25 |
Achieving P-type InN and Its Characterization
-- Present Status and Future Prospects -- |
Akihiko Yoshikawa, Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani (Chiba Univ.) |
| (12) |
15:25-15:50 |
Ultraghin InN/(In)GaN quantum well structure for a new active layer of blue-green light |
Song-Bek Che, Akihiko Yuki, Hiroshi Watanabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.) |
| (13) |
15:50-16:15 |
Emission color tunable light-emitting diodes based on multi-facetted InGaN/GaN quantum wells |
Mitsuru Funato, Keita Hayashi, Masaya Ueda, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia Corp.) |
| |
16:15-16:25 |
Break ( 10 min. ) |
| (14) |
16:25-16:50 |
Control of substrate curvature during MOVPE growth of AlGaN |
Yuya Ogawahara, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) |
| (15) |
16:50-17:15 |
Low-pressure HVPE growth and characterization of AlN on period-trench-pattered substrate |
Yusuke Katagiri, Kazuteru Okuura, Jiejun Wu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tetsuya Ezaki, Noriyuki Kuwano (Kyushu Univ.) |
| (16) |
17:15-17:40 |
Toward high-power operation of 230nm-band AlGaN UV-LED |
Norimichi Noguchi (RIKEN/Saitama Univ./JST CREST), Hideki Hirayama (RIKEN/JST CREST), Jun Norimatsu (RIKEN/Saitama Univ.), Norihiko Kamata (Saitama Univ./JST CREST) |
| (17) |
17:40-18:05 |
270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template |
Jun Norimatsu, Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi (RIKEN), Takayoshi Takano (Matsushita Electric Works), Kenji Tsubaki (RIKEN), Norihiko Kamata (Saitama University/JST CREST) |
Fri, Nov 28 AM
09:00 - 16:35 |
| (18) |
09:00-09:25 |
280nm-band InAlGaN-based high-power deep-UV LEDs |
Hideki Hirayama, Sashie Fujikawa (RIKEN), Takayoshi Takano, Kenji Tsubaki (Matsushita Electric Works Ltd.) |
| (19) |
09:25-09:50 |
Analysis of AlGaN Growth on MOVPE by Computational Simulation |
Akira Hirako, Masaya Ichikawa, Kennichi Nakamura, Kazuhiro Ohkawa (Tokyo Univ. of Sci.) |
| (20) |
09:50-10:15 |
Luminescence properties from two types of prismatic planes of InGaN |
Hisashi Kanie, Kenichi Akashi, Hidemi Tumuki (Tokyo University of Science) |
| (21) |
10:15-10:40 |
Theroretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al)InGaN Alloy Substrates |
Atsushi Yamaguchi (Kanazawa Inst. of Technology) |
| |
10:40-10:50 |
Break ( 10 min. ) |
| (22) |
10:50-11:15 |
Two-Dimensional Analysis of Field-Plate Effects on Buffer-Related Lag Phenomena and Current Collapse in AlGaN/GaN HEMTs |
Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio (Shibaura Inst. Tech.) |
| (23) |
11:15-11:40 |
Optimum Design of AlGaN/GaN HEMTs with Field Plate |
Ryosuke Sakai, Tomotaka Okai, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) |
| (24) |
11:40-12:05 |
Device simulation of HfO2/AlGaN/GaN MOSFET
-- effects of HfO2/AlGaN interface -- |
Yoshihisa Hayashi, Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) |
| |
12:05-13:05 |
Lunch Break ( 60 min. ) |
| (25) |
13:05-13:30 |
Fabrication and Characterization of AlGaN/GaN MOSFETs with HfO2 Gate Insulator deposited by ALD |
Yuji Goda, Yoshihisa Hayashi, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) |
| (26) |
13:30-13:55 |
Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer |
Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC) |
| (27) |
13:55-14:20 |
An Over 100 W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier |
Toshihiro Ohki, Toshihide Kikkawa, Masahito Kanamura, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto, Kazukiyo Joshin, Naoki Hara (Fujitsu, Fujitsu Labs.) |
| (28) |
14:20-14:45 |
Study on AlGaN/GaN HEMTs on Si(111) substrates with thick AlGaN/GaN, GaN/AlN and AlGaN/AlN multilayers |
Takaaki Suzue, Masanori Suzuki, Yukiyasu Nomura, Takashi Egawa (Nagoya Inst. of Tech.) |
| |
14:45-14:55 |
Break ( 10 min. ) |
| (29) |
14:55-15:20 |
Flat Surface and High Electron Mobility of InAlN/AlGaN/AlN/GaN Heterostructures |
Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi (NTT) |
| (30) |
15:20-15:45 |
Depth profiles of strain in AlGaN/GaN heterostructures grown on si by electron backscatter diffraction technique |
Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda (Panasonic) |
| (31) |
15:45-16:10 |
Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero Structure |
Hajime Tsukahara, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan univ.) |
| (32) |
16:10-16:35 |
Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors |
Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ) |
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