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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tatsuya Kunikiyo (Renesas) Vice Chair: Takahiro Shinada (Tohoku Univ.) Secretary: Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas) Assistant: Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY) DATE: Tue, Jan 30, 2018 11:00 - 16:30 PLACE: Kikai Shinko Kaikan B3F Kenshuu-1(3-5-8, Shibakoen, Minato-ku, Tokyo, 105-0011, Japan.http://www.jspmi.or.jp/english/about/access.html) TOPICS: ---------------------------------------- Tue, Jan 30 AM (11:00 - 16:30) ---------------------------------------- (1) 11:00 - 11:30 [Invited Talk] Perspective of Negative Capacitance FinFETs Investigated by Transient TCAD Simulation Hiroyuki Ota, Shinji Mgita, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) (2) 11:30 - 12:00 [Invited Talk] Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) ----- Lunch Break ( 90 min. ) ----- (3) 13:30 - 14:00 [Invited Talk] Lateral Charge Migration Suppression Technique of 3D-NAND Flash by Vth Nearing Kyoji Mizoguchi, Shohei Kotaki, Yoshiaki Deguchi, Ken Takeuchi (Chuo Univ.) (4) 14:00 - 14:30 [Invited Talk] Reliability and Scalability of FinFET Split-Gate MONOS Array with Tight Vth Distribution for 16/14nm-node Embedded Flash Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Tomohiro Yamashita, Yasuo Yamaguchi (renesas) ----- Break ( 30 min. ) ----- (5) 15:00 - 15:30 [Invited Talk] STDP synapse with outstanding stability based on a novel insulator-to-metal transition FET Pablo Stoliar (nanoGUNE), Alejandro Schulman, Ai Kitoh, Akihito Sawa, Isao H. Inoue (AIST) (6) 15:30 - 16:00 [Invited Talk] Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) (7) 16:00 - 16:30 # Information for speakers Invited Talk will have 25 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by The Japan Society of Applied Physics. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Thu, Feb 8, 2018: Tokyo Univ. [Mon, Nov 20] Wed, Feb 28, 2018 (changed): Centennial Hall, Hokkaido Univ. [Wed, Dec 20], Topics: Functional nanodevices and related technologies Thu, Mar 8, 2018: [Fri, Jan 19] Fri, Apr 6, 2018 - Sat, Apr 7, 2018: Okinawaken Seinen Kaikan [Mon, Feb 12], Topics: Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc. # SECRETARY: Rihito Kuroda(Tohoku Univ.) Tel 022-795-4833 Fax 022-795-4834 E-mail:        e3   Last modified: 2017-12-04 16:14:46 |
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