Thu, Nov 11 AM
09:55 - 12:00 |
| |
09:55-10:00 |
Opening Address ( 5 min. ) |
| (1) |
10:00-11:00 |
[Invited Talk]
New Development of Silicon IGBT
-- Scaling IGBT and Double-Gate IGBT -- |
Toshiro Hiramoto, Takuya Saraya (UTokyo) |
| (2) |
11:00-12:00 |
[Invited Talk]
Non-Normal Model Parameter Generation for Variation-Aware Circuit Simulation |
Takashi Sato, Hiroki Tsukamoto, Song Bian (Kyoto Univ.), Michihiro Shintani (NAIST) |
| |
12:00-13:00 |
Lunch Break ( 60 min. ) |
Thu, Nov 11 PM
13:00 - 15:00 |
| (3) |
13:00-14:00 |
[Invited Talk]
Prospects of HfZrO2-based FeFETs for Ultra-low Power Memory, Logic and AI Applications |
Shinichi Takagi, Kasidit Toprasertpong, Xuan Luo, Eishin Nako, Zeyu Wang, Tsung-En Lee, Kento Tahara, Mitsuru Takenaka, Ryosho Nakane (U. Tokyo) |
| (4) |
14:00-15:00 |
[Invited Talk]
Study on the efficient erase opeartion in ferroelectric HfO2 FeFET toward 3D vertical structure |
Masaharu Kobayashi, Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Chun-Jung Su (TSRI), Vita Pi-Ho Hu (NTU) |
| |
15:00-15:15 |
Break ( 15 min. ) |
Thu, Nov 11 PM
15:15 - 17:40 |
| (5) |
15:15-16:15 |
[Invited Talk]
Characterization techniques of plasma process-induced defect creation in electronic devices |
Koji Eriguchi (Kyoto Univ.) |
| (6) |
16:15-16:40 |
A threshold voltage definition based on a standardized charge vs. voltage relationship |
Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) |
| (7) |
16:40-17:40 |
[Invited Talk]
SISPAD2021 Review |
Hideki Minari (Sony Semiconductor Solutions) |
Fri, Nov 12 AM
09:30 - 12:30 |
| (8) |
09:30-10:30 |
[Invited Talk]
Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects |
Takuma Kobayashi (Kyoto Univ./Tokyo Tech), Takafumi Okuda, Keita Tachiki, Koji Ito (Kyoto Univ.), Yu-ichiro Matsushita (Tokyo Tech), Tsunenobu Kimoto (Kyoto Univ.) |
| (9) |
10:30-11:30 |
[Invited Talk]
Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport |
Tomoya Nishimura, Katsumi Eikyu, Kenichiro Sonoda, Tamotsu Ogata (Renesas Electronics) |
| (10) |
11:30-12:30 |
[Invited Talk]
Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton |
Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu) |
| |
12:30-13:30 |
Lunch Break ( 60 min. ) |
Fri, Nov 12 PM
13:30 - 15:30 |
| (11) |
13:30-14:30 |
[Invited Talk]
Synthesis of turbostratic multilayer graphene nanoribbon and its electrical transport properties |
Ryota Negishi (Toyo Univ.) |
| (12) |
14:30-15:30 |
[Invited Talk]
A Theoretical Study on Strain-Induced Change of Schottky Energy Barrier of Dumbbell-Shape Graphene-Nanoribbons for Highly Sensitive Strain Sensors |
Qinqiang Zhang, Ken Suzuki, Hideo Miura (Tohoku Univ.) |
| |
15:30-15:45 |
Break ( 15 min. ) |
Fri, Nov 12 PM
15:45 - 17:35 |
| (13) |
15:45-16:45 |
[Invited Talk]
Acceleration of nonequilibrium Green's function simulation for nanoscale devices by applying machine-learning model |
Satofumi Souma (Kobe Univ.) |
| (14) |
16:45-17:10 |
Simulation of Phonon Transport in Si Nanowires with Physics Informed Neural Networks |
Yuma Fujita, Yuhei Suzuki, Yoshinari Kamakura (Osaka Inst. Technol.) |
| (15) |
17:10-17:35 |
Inference of MOSFET Characteristics and Parameters with Machine Learning |
Kohei Akazawa, Yuigo Nakanishi, Yuhei Suzuki, Yoshinari Kamakura (Osaka Inst. Technol.) |