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Technical Committee on Silicon Device and Materials (SDM)
Chair: Hiroshige Hirano (TowerPartners Semiconductor) Vice Chair: Shunichiro Ohmi (Tokyo Inst. of Tech.)
Secretary: Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)
Assistant: Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.)

DATE:
Thu, Nov 11, 2021 09:55 - 17:40
Fri, Nov 12, 2021 09:30 - 17:35

PLACE:
Virtual conference

TOPICS:
Process, Device, Circuit simulation, etc.

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Thu, Nov 11 AM (09:55 - 12:00)
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----- Opening Address ( 5 min. ) -----

(1) 10:00 - 11:00
[Invited Talk]
New Development of Silicon IGBT
-- Scaling IGBT and Double-Gate IGBT --
Toshiro Hiramoto, Takuya Saraya (UTokyo)

(2) 11:00 - 12:00
[Invited Talk]
Non-Normal Model Parameter Generation for Variation-Aware Circuit Simulation
Takashi Sato, Hiroki Tsukamoto, Song Bian (Kyoto Univ.), Michihiro Shintani (NAIST)

----- Lunch Break ( 60 min. ) -----

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Thu, Nov 11 PM (13:00 - 15:00)
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(3) 13:00 - 14:00
[Invited Talk]
Prospects of HfZrO2-based FeFETs for Ultra-low Power Memory, Logic and AI Applications
Shinichi Takagi, Kasidit Toprasertpong, Xuan Luo, Eishin Nako, Zeyu Wang, Tsung-En Lee, Kento Tahara, Mitsuru Takenaka, Ryosho Nakane (U. Tokyo)

(4) 14:00 - 15:00
[Invited Talk]
Study on the efficient erase opeartion in ferroelectric HfO2 FeFET toward 3D vertical structure
Masaharu Kobayashi, Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Chun-Jung Su (TSRI), Vita Pi-Ho Hu (NTU)

----- Break ( 15 min. ) -----

----------------------------------------
Thu, Nov 11 PM (15:15 - 17:40)
----------------------------------------

(5) 15:15 - 16:15
[Invited Talk]
Characterization techniques of plasma process-induced defect creation in electronic devices
Koji Eriguchi (Kyoto Univ.)

(6) 16:15 - 16:40
A threshold voltage definition based on a standardized charge vs. voltage relationship
Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo)

(7) 16:40 - 17:40
[Invited Talk]
SISPAD2021 Review
Hideki Minari (Sony Semiconductor Solutions)

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Fri, Nov 12 AM (09:30 - 12:30)
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(8) 09:30 - 10:30
[Invited Talk]
Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects
Takuma Kobayashi (Kyoto Univ./Tokyo Tech), Takafumi Okuda, Keita Tachiki, Koji Ito (Kyoto Univ.), Yu-ichiro Matsushita (Tokyo Tech), Tsunenobu Kimoto (Kyoto Univ.)

(9) 10:30 - 11:30
[Invited Talk]
Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport
Tomoya Nishimura, Katsumi Eikyu, Kenichiro Sonoda, Tamotsu Ogata (Renesas Electronics)

(10) 11:30 - 12:30
[Invited Talk]
Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton
Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu)

----- Lunch Break ( 60 min. ) -----

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Fri, Nov 12 PM (13:30 - 15:30)
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(11) 13:30 - 14:30
[Invited Talk]
Synthesis of turbostratic multilayer graphene nanoribbon and its electrical transport properties
Ryota Negishi (Toyo Univ.)

(12) 14:30 - 15:30
[Invited Talk]
A Theoretical Study on Strain-Induced Change of Schottky Energy Barrier of Dumbbell-Shape Graphene-Nanoribbons for Highly Sensitive Strain Sensors
Qinqiang Zhang, Ken Suzuki, Hideo Miura (Tohoku Univ.)

----- Break ( 15 min. ) -----

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Fri, Nov 12 PM (15:45 - 17:35)
----------------------------------------

(13) 15:45 - 16:45
[Invited Talk]
Acceleration of nonequilibrium Green's function simulation for nanoscale devices by applying machine-learning model
Satofumi Souma (Kobe Univ.)

(14) 16:45 - 17:10
Simulation of Phonon Transport in Si Nanowires with Physics Informed Neural Networks
Yuma Fujita, Yuhei Suzuki, Yoshinari Kamakura (Osaka Inst. Technol.)

(15) 17:10 - 17:35
Inference of MOSFET Characteristics and Parameters with Machine Learning
Kohei Akazawa, Yuigo Nakanishi, Yuhei Suzuki, Yoshinari Kamakura (Osaka Inst. Technol.)

# Information for speakers
Invited Talk will have 50 minutes for presentation and 10 minutes for discussion.
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.


=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Mon, Jan 31, 2022: Online [unfixed]
Fri, Feb 4, 2022: Online [Fri, Dec 10]


Last modified: 2021-09-08 18:33:17


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