Fri, Apr 11 AM 09:00 - 17:00 |
(1) |
09:00-09:30 |
[Invited Talk]
Location control of super lateral growth in excimer laser crystallization of Si film by micro-melt seeding method |
Wenchang Yeh, Hanseng Dai, Hsinchi Chen, Bingcyun Chen (NTUST) |
(2) |
09:30-10:00 |
[Invited Talk]
Study of Application of compressible Flow and Shock Wave to PLA |
Minoru Yaga, Hiroshi Fukuoka, Hideki Mine (Univ. of the Ryukyus), Toshio Takiya (Hitachi Zosen) |
(3) |
10:00-10:25 |
Looking into poly-Si films from TFT characteristics |
Tadashi Serikawa (Osaka Univ.) |
|
10:25-10:35 |
Break ( 10 min. ) |
(4) |
10:35-11:00 |
Electrical activation of heavily doped Si film by crystallization annealing |
Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai (Univ. Ryukyus), Toshiharu Suzuki, Masateru Sato (SEN) |
(5) |
11:00-11:25 |
Investigation on Characteristic Variation of Polycrystalline-Si Thin Film Transistor Having Stripe Channels |
Koji Akiyama, Kazunori Watanabe, Tanemasa Asano (Graduate school, Kyushu Univ.) |
(6) |
11:25-11:50 |
Evaluation of stress and crystallinity of laser crystallization polysilicon thin film using UV/Visible Raman spectroscopy |
Yasuto Kakemura, Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Takashi Noguchi (Univ. of the Ryukyus) |
(7) |
11:50-12:15 |
Application of Si Thin-Film to Photo-Sensor Device |
Mitsuharu Tai, Yasutaka Konno, Mutsuko Hatano (CRL, Hitachi), Toshio Miyazawa (Hitachi Displays) |
|
12:15-13:15 |
Lunch Break ( 60 min. ) |
(8) |
13:15-13:40 |
Clarification of ITO/AlNiNd contact formation mechanism |
Kazumasa Kawase, Tsukasa Motoya, Junji Tanimura (Mitsubishi Electric Corp.), Naoki Tsumura (メルコ・ディスプレイ・テクノロジ), Kensuke Nagayama (メルコ・ディスプレイ・テクノロジー), Nobuaki Ishiga (メルコ・ディスプレイ・テクノロジ), Kazunori Inoue (Mitsubishi Electric Corp.) |
(9) |
13:40-14:05 |
Preparation and Characterization of Thermal Oxidization Anodized Si with a Low-k Dielectric Constant |
Tomihiro Sonegawa, Kazuhiro Uehara, Takehiro Maehama (Univ. of the Ryukyus) |
(10) |
14:05-14:30 |
Degradation of Ga2o3-In2O3-Zno(GIZO) Thin Film Transistors |
Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ji Sim Jung, Jang Yeon Kwon (Sumsung Advenced Institute of Technology) |
(11) |
14:30-14:55 |
Oxide-channel thin film transistors with ferroelectric and high-k gate insulators |
Eisuke Tokumitsu, Hiroshi Shibata, Tomohiro Oiwa, Yohei Kondo (Tokyo Tech) |
|
14:55-15:10 |
Break ( 15 min. ) |
(12) |
15:10-15:40 |
[Invited Talk]
Structure and Field-effect Transistor Characteristics of Organic Semiconductors |
Reiko Azumi, Masayuki Chikamatsu, Yuji Yoshida, Kiyoshi Yase (PRI, AIST) |
(13) |
15:40-16:10 |
[Invited Talk]
In situ observation of absorption spectra of proteins on solid/liquid interfaces by using slab optical waveguide spectroscopy |
Naoki Matsuda, Yusuke Ayato, Masayoshi Matsui (AIST) |
(14) |
16:10-16:35 |
Improvement of Interface Property in Pentacene TFT by Atomic Hydrogen Annealing |
Akira Heya, Masahiko Sato, Hiroshi Hasegawa, Naoto Matsuo (Univ. of Hyogo) |
(15) |
16:35-17:00 |
Device simulation on organic TFT
-- Dependence on structures -- |
Chang-Hoon Shim, Reiji Hattori, Fumito Maruoka (Kyushu Univ.) |
Sat, Apr 12 AM 09:00 - 11:50 |
(16) |
09:00-09:30 |
[Invited Talk]
Control of microstructures of Si bulk muticrystals for improvement of solar cell performance |
Noritaka Usami, Kozo Fujiwara, Kentaro Kutsukake, Kazuo Nakajima (IMR, Tohoku Univ.) |
(17) |
09:30-10:00 |
[Invited Talk]
Electron Microscopy Study of Low Temperature Crystallization of a-SiGe Thin Film |
Masaru Itakura, Masanobu Miyao (Kyushu Univ.) |
(18) |
10:00-10:25 |
Low-temperature Solid-Phase Crystallization of a-Ge on Glass Substrate for Advanced Thin-Film transistor |
Isakane Nakao, Kaoru Toko (Kyushu Univ.), Takashi Noguchi (Univ. Ryukyus), Taizoh Sadoh (Kyushu Univ.) |
|
10:25-10:35 |
Break ( 10 min. ) |
(19) |
10:35-11:00 |
Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei |
Chiaki Yoshimoto, Hiromasa Ohmi, Takayoshi Shimura, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake (Osaka Univ.) |
(20) |
11:00-11:25 |
Microstructural Analysis of Polycrystalline Silicon Thin Films Formation Behavior during Aluminum Induced Crystallization |
Ken-ichi Ikeda (Kyushu Univ.), Takeshi Hirota (Mitsubishi Heavy Industries Ltd.), Kensuke Fujimoto (Kyushu Univ.), Youhei Sugimoto (Seiko Epson Corp.), Naoki Takata (Tokyo Inst. Tech.), Seiichiro Ii (Sojo Univ.), Hideharu Nakashima, Hiroshi Nakashima (Kyushu Univ.) |
(21) |
11:25-11:50 |
Low-temperature formation of poly-Ge on insulator by metal-induced lateral crystallization |
Takashi Hagihara, Kaoru Toko, Taizoh Sadoh (Kyushu Univ.) |