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| Chair |
|
Shigeyoshi Watanabe (Shonan Inst. of Tech.) |
| Vice Chair |
|
Toshihiro Sugii (Fujitsu Microelectronics) |
| Secretary |
|
Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) |
| Assistant |
|
Syunichiro Ohmi (Tokyo Inst. of Tech.) |
|
| Conference Date |
Mon, Jun 9, 2008 13:30 - 17:40
Tue, Jun 10, 2008 09:30 - 15:00 |
| Topics |
Science and Sci. & Technol. for Thin Dielectrics for MIS Devices |
| Conference Place |
|
Contact
Person |
03-5452-6342(藤岡研究室） |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Mon, Jun 9 PM
13:30 - 15:40 |
| (1) |
13:30-14:30 |
[Tutorial Lecture]
Current Status and Prospects of High Mobility Channel Technologies for High performance CMOS  SDM2008-42 |
Shinichi Takagi (Univ. of Tokyo/MIRAI-AIST) |
| |
14:30-14:40 |
Break ( 10 min. ) |
| (2) |
14:40-15:40 |
[Tutorial Lecture]
Development History of Compound Semiconductor Electron Devices SDM2008-43 |
Yasuo Ohno (Tokushima Univ.) |
| |
15:40-15:50 |
Break ( 10 min. ) |
Mon, Jun 9 PM
15:50 - 17:40 |
| (3) |
15:50-16:15 |
HoleSubband Dispersion in Si inversion Layers SDM2008-44 |
Sakura N. Takeda, Makoto Morita, Ｔａkuya Ohsugi, Yohei Tanigawa, Hiroshi Daimon (NAIST) |
| (4) |
16:15-16:40 |
Accurate Evaluation of MOS Inversion Layer Mobility SDM2008-45 |
Akira Toriumi, Koji Kita (Univ. Tokyo) |
| |
16:40-16:50 |
Break ( 10 min. ) |
| (5) |
16:50-17:15 |
Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs SDM2008-46 |
Masumi Saitoh, Shigeki Kobayashi, Ken Uchida (Toshiba) |
| (6) |
17:15-17:40 |
Mobility Enhancement in Ultra Thin Body SOI MOSFETs by Quantum Confinement Effects SDM2008-47 |
Toshiro Hiramoto, Ken Shimizu, Gen Tsutsui (Univ. of Tokyo) |
| |
18:00-19:30 |
Banquet ( 90 min. ) |
Tue, Jun 10 AM
09:30 - 10:20 |
| (7) |
09:30-09:55 |
Transconductance enhancement of strained-Si nanowire FETs SDM2008-48 |
Aya Seike, Tomoyuki Tange, Itsutaku Sano, Yuuki Sugiura, Ikushin Tsuchida, Hiromichi Ohta, Takanobu Watanabe (Waseda Univ.), Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Iwao Ohdomari (Waseda Univ.) |
| (8) |
09:55-10:20 |
Gate Dielectrics Interface Control for III-V MISFET SDM2008-49 |
Tetsuji Yasuda, Noriyuki Miyata (AIST), Akihiro Ohtake (NIMS) |
| |
10:20-10:30 |
Break ( 10 min. ) |
Tue, Jun 10 AM
10:30 - 11:45 |
| (9) |
10:30-10:55 |
Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack
-- Origin of Change in Effective Work Function of Ru -- SDM2008-50 |
Taiki Mori, Akio Ohta, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) |
| (10) |
10:55-11:20 |
The role of the high-k/SiO2 interface in the control of the threshold voltage for high-k MOS devices SDM2008-51 |
Kunihiko Iwamoto, Yuuichi Kamimuta (MIRAI-ASET), Yu Nunoshige (Shibaura Institute of Technology), Akito Hirano, Arito Ogawa, Yukimune Watanabe (MIRAI-ASET), Shinji Migita, Wataru Mizubayashi, Yukinori Morita (MIRAI-ASRC, AIST), Masashi Takahashi (MIRAI-ASET), Hiroyuki Ota (MIRAI-ASRC, AIST), Toshihide Nabatame (MIRAI-ASET), Akira Toriumi (The University of Tokyo) |
| (11) |
11:20-11:45 |
XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion -- SDM2008-52 |
Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) |
| |
11:45-12:45 |
Lunch Break ( 60 min. ) |
Tue, Jun 10 PM
12:45 - 15:00 |
| (12) |
12:45-13:10 |
XPS real-time monitoring on the development of Si suboxides during formation of thermal oxide on Si(110) surface SDM2008-53 |
Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Mitsutaka Matsumoto, Atsushi Kato, Eiji Saito, Maki Suemitsu (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA) |
| (13) |
13:10-13:35 |
Fabrication of Pr oxide films by MOCVD and evaluation of its electrical properties SDM2008-54 |
Hiroki Kondo, Shinya Sakurai (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) |
| |
13:35-13:45 |
Break ( 10 min. ) |
| (14) |
13:45-14:10 |
Theoretical Studies on the Charge Trap Mechanisms of MONOS Memories SDM2008-55 |
Kenji Shiraishi, Kenji Kobayashi (Univ of Tsukuba), Takeshi Ishida, Yutaka Okuyama, Renichi Yamada (Central Research Labs., Hitachi) |
| (15) |
14:10-14:35 |
Characterization of Metal Nanodots Nonvolatile Memory SDM2008-56 |
Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (Tohoku Univ.) |
| (16) |
14:35-15:00 |
Bio-nano dot floating gate memory with High-k films SDM2008-57 |
Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC) |
| Announcement for Speakers |
| Tutorial Lecture | Each speech will have 50 minutes for presentation and 10 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E-  ge       ba |
Last modified: 2008-04-17 10:45:33
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