Thu, Jun 17 PM
13:00 - 17:05 |
| (1) |
13:00-13:25 |
Growth of InSb films on the V-grooved Si(001) substrate with InSb bi-layer |
Tatsuya Iwasugi, Sara Khamseh, Azusa Kadoda, Kimihiko Nakatani, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) |
| (2) |
13:25-13:50 |
Fabrication and characterization of InAs ultra-thin films on flexible substrates |
Hayato Takita, Norihiko Hashimoto, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST) |
| (3) |
13:50-14:15 |
Electrochemical Formation of InP Porous Structures and Their Application to High-Sensitive Chemical Sensors |
Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) |
| |
14:15-14:25 |
Break ( 10 min. ) |
| (4) |
14:25-14:50 |
Analysis of electron velocity reduction rate due to self-heating in AlGaN/GaN heterojunction field-effect transistors |
Toshi-kazu Suzuki, Nariaki Tanaka (JAIST) |
| (5) |
14:50-15:15 |
Electrical Characterization of Recessed-gate AlgaN/GaN Heterojunction FETs |
Misato Mukohno, Naoki Yamada, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui.) |
| (6) |
15:15-15:40 |
Fabrication of high-frequency and high-power AlGaN/GaN HEMTs |
Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.) |
| |
15:40-15:50 |
Break ( 10 min. ) |
| (7) |
15:50-16:15 |
Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs |
Masataka Higashiwaki (NICT/JST/UCSB), Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra (UCSB) |
| (8) |
16:15-16:40 |
Understanding of C-V characteristics in AlGaN/GaN MIS structure |
Chihoko Mizue (Hokkaido Univ., RCIQE), Tamotsu Hashizume (Hokkaido Univ., RCIQE, JST-CREST) |
| (9) |
16:40-17:05 |
Effect of interface properties on characteristics of carbon nanotube FETs |
Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) |
Fri, Jun 18 AM
10:00 - 12:40 |
| (10) |
10:00-10:25 |
Theoretical Analysis of Carrier Transport in Nano-Scale InGaAs-Channel MOSFETs |
Takahiro Homma, Hisanao Watanabe, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Science.) |
| (11) |
10:25-10:50 |
Theoretical analysis of operating conditions to suppress relaxation oscillations in Resonant Tunneling Diode biased at negative differential resistance region |
Yosuke Itagaki, Kiyoto Asakawa, Hideaki Shin-ya, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro.Univ) |
| (12) |
10:50-11:15 |
Promotion of power generation in Si solar cells made from low-purity Si wafers |
Fumihiko Hirose, Yuki Sano, Satoru Tuzuki, Takahiko Suzuki (Yamagata Univ.) |
| |
11:15-11:25 |
Break ( 10 min. ) |
| (13) |
11:25-11:50 |
Removal of Cu contaminants on silicon material surfaces by defect passivation etchless cleaning solutions |
Masao Takahashi, Yuko Higashi, Hiroaki Narita, Hitoo Iwasa, Hikaru Kobayashi (Osaka Univ/JST) |
| (14) |
11:50-12:15 |
Photo corrosion of Metal Gate Electrodes during Wet |
Daisuke Watanabe (Daikin Industries,Ltd.), Chiharu Kimura, Hidemitsu Aoki (Osaka Univ.) |
| (15) |
12:15-12:40 |
Methyl-BCN Film using Low Temperature Etching. |
Hidemitsu Aoki, Makoto Hara, Takuro Masuzumi, Zhiming Lu, Tomohiro Kuki, Chiharu Kimura, Takashi Sugino (Osaka Univ.) |
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