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Technical Committee on Electron Device (ED)
Chair: Tamotsu Hashidume (Hokkaido Univ.) Vice Chair: Tetsu Kachi (Toyota Central R&D Labs.)
Secretary: Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)
Assistant: Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic)

DATE:
Thu, Jun 17, 2010 13:00 - 17:05
Fri, Jun 18, 2010 10:00 - 12:40

PLACE:
Japan Advanced Institute of Science and Technology(Take the local train from JR Kanazawa Station and get off at the next stop, JR Nishi-Kanazawa Station (the special express does not stop here). Walk to the left from that station to Hokuriku Railroad, Ishikawa Line Shin-Nishi-Kanazawa Station. Take the Ishikawa Line to Tsurugi Station. The JAIST shuttle bus will take you to the university.http://www.jaist.ac.jp/english/location/index.html. Prof. Toshikazu Suzuki. +81-(0)761-51-1441)

TOPICS:
Process and device technology of semiconductors (surface, interface, reliability, etc.)

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Thu, Jun 17 PM (13:00 - 17:05)
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(1) 13:00 - 13:25
Growth of InSb films on the V-grooved Si(001) substrate with InSb bi-layer
Tatsuya Iwasugi, Sara Khamseh, Azusa Kadoda, Kimihiko Nakatani, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)

(2) 13:25 - 13:50
Fabrication and characterization of InAs ultra-thin films on flexible substrates
Hayato Takita, Norihiko Hashimoto, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST)

(3) 13:50 - 14:15
Electrochemical Formation of InP Porous Structures and Their Application to High-Sensitive Chemical Sensors
Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.)

----- Break ( 10 min. ) -----

(4) 14:25 - 14:50
Analysis of electron velocity reduction rate due to self-heating in AlGaN/GaN heterojunction field-effect transistors
Toshi-kazu Suzuki, Nariaki Tanaka (JAIST)

(5) 14:50 - 15:15
Electrical Characterization of Recessed-gate AlgaN/GaN Heterojunction FETs
Misato Mukohno, Naoki Yamada, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui.)

(6) 15:15 - 15:40
Fabrication of high-frequency and high-power AlGaN/GaN HEMTs
Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.)

----- Break ( 10 min. ) -----

(7) 15:50 - 16:15
Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs
Masataka Higashiwaki (NICT/JST/UCSB), Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra (UCSB)

(8) 16:15 - 16:40
Understanding of C-V characteristics in AlGaN/GaN MIS structure
Chihoko Mizue (Hokkaido Univ., RCIQE), Tamotsu Hashizume (Hokkaido Univ., RCIQE, JST-CREST)

(9) 16:40 - 17:05
Effect of interface properties on characteristics of carbon nanotube FETs
Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)

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Fri, Jun 18 AM (10:00 - 12:40)
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(10) 10:00 - 10:25
Theoretical Analysis of Carrier Transport in Nano-Scale InGaAs-Channel MOSFETs
Takahiro Homma, Hisanao Watanabe, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Science.)

(11) 10:25 - 10:50
Theoretical analysis of operating conditions to suppress relaxation oscillations in Resonant Tunneling Diode biased at negative differential resistance region
Yosuke Itagaki, Kiyoto Asakawa, Hideaki Shin-ya, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro.Univ)

(12) 10:50 - 11:15
Promotion of power generation in Si solar cells made from low-purity Si wafers
Fumihiko Hirose, Yuki Sano, Satoru Tuzuki, Takahiko Suzuki (Yamagata Univ.)

----- Break ( 10 min. ) -----

(13) 11:25 - 11:50
Removal of Cu contaminants on silicon material surfaces by defect passivation etchless cleaning solutions
Masao Takahashi, Yuko Higashi, Hiroaki Narita, Hitoo Iwasa, Hikaru Kobayashi (Osaka Univ/JST)

(14) 11:50 - 12:15
Photo corrosion of Metal Gate Electrodes during Wet
Daisuke Watanabe (Daikin Industries,Ltd.), Chiharu Kimura, Hidemitsu Aoki (Osaka Univ.)

(15) 12:15 - 12:40
Methyl-BCN Film using Low Temperature Etching.
Hidemitsu Aoki, Makoto Hara, Takuro Masuzumi, Zhiming Lu, Tomohiro Kuki, Chiharu Kimura, Takashi Sugino (Osaka Univ.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- Japan Advanced Institute of Science and Technology

# CONFERENCE ANNOUNCEMENT:
- Please join us for an opening reception held on June 17th.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Wed, Jun 30, 2010 - Fri, Jul 2, 2010: Tokyo Inst. of Tech. Ookayama Campus [Thu, Apr 15], Topics: 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
Mon, Sep 13, 2010 (changed): Kyushu Institute of Technology(Wakamatsu) [Fri, Jul 16]

# SECRETARY:
Hara Naoki （Fujitsu Lab.）
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E-mail :