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Technical Committee on Silicon Device and Materials (SDM)
Chair: Shunichiro Ohmi (Tokyo Inst. of Tech.) Vice Chair: Tatsuya Usami (ASM Japan)
Secretary: Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic)
Assistant: Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (SanDisk)
DATE:
Mon, Jan 30, 2023 13:10 - 16:55
PLACE:
TOPICS:
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Mon, Jan 30 PM (13:00 - 16:55)
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----- Opening Address ( 10 min. ) -----
(1) 13:10 - 13:40
[Invited Talk]
Integration Design of 3D Heterogeneous IGZO/Ge/2Si 6T SRAM for Extremely Reduced Cell Size
Chang Wenhsin, , , , , , (****)
(2) 13:40 - 14:10
[Invited Talk]
A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time
Kazuaki Ohshima, Masami Endo, Shiyuu Numata, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Shunpei Yamazaki (SEL)
(3) 14:10 - 14:40
[Invited Talk]
25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance >107 for eFlash-type MRAM
H Honjoi, K Nishioka, S Miura, Hiroshi Naganuma, T Watanabe, T Nasuno, T Tanigawa, Y Noguchi, H Inoue, M Yasuhiro, S Ikeda, T Endoh (Tohoku Univ.)
----- Break ( 15 min. ) -----
(4) 14:55 - 15:25
[Invited Talk]
Design guidlines for SBD integration into SiC-MOSFET breaking RonA- diode conduction capability trade-off
Shunsuke Asaba, Masaru Furukawa, Yuji Kusumoto (Toshiba D&S), Ryosuke Iijima (Toshiba), Hiroshi Kono (Toshiba D&S)
(5) 15:25 - 15:55
[Invited Talk]
Non-volatile Mid-infrared Phase Change Material Optical Phase Shifter Based on Ge2Sb2Te3S2
Yuto Miyatake (Univ. of Tokyo), Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Makoto Okano (AIST), Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo)
(6) 15:55 - 16:25
[Invited Talk]
Resonant Tunneling Diode Technology for Future Terahertz Applications
Safumi Suzuki (Tokyo Insutitute of Tech.)
(7) 16:25 - 16:55
# Information for speakers
Invited Talk will have 25 minutes for presentation and 5 minutes for discussion.
# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.
=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:
Tue, Feb 7, 2023: Tokyo Univ. [Fri, Dec 9]
Fri, Apr 21, 2023 - Sat, Apr 22, 2023: Okinawaken Seinen Kaikan [Fri, Feb 10], Topics: Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc.
# SECRETARY:
※各研究会幹事もしくは担当者の連絡先を記載してください。
Last modified: 2023-01-10 15:30:19
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