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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Naoki Hara (Fujitsu Labs.)
Vice Chair Koichi Maezawa (Univ. of Toyama)
Secretary Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC)
Assistant Toshikazu Suzuki (JAIST), Manabu Arai (New JRC)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yuzou Oono (Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo (Renesas)
Secretary Rihito Kuroda (Tohoku Univ.)
Assistant Tadashi Yamaguchi (Renesas)

Conference Date Thu, Feb 5, 2015 13:30 - 17:50
Fri, Feb 6, 2015 09:30 - 12:20
Topics Functional nanodevices and related technologies 
Conference Place Centennial Hall, Hokkaido University 
Address N9, W6, Sapporo 060-0809, Japan
Transportation Guide 10 min walk from JR Sapporo Station
http://www.hokudai.ac.jp/introduction/campus/100th/
Contact
Person
Prof. Seiya Kasai
+81-11-706-7171 (Secretary)
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.

Thu, Feb 5 PM 
13:30 - 17:50
(1) 13:30-14:15 [Invited Talk]
Development of Si-based thermoelectric nanomaterial using ultrathin SiO2 film technique
Yoshiaki Nakamura (Osaka Univ.)
(2) 14:15-14:40 Seebeck coefficient in crystalline SiGe for high-efficiency thermoelectric devices Hiroya Ikeda, Veerappan Manimuthu, Muthusamy Omprakash, Yuhei Suzuki, Faiz Salleh, Mukannan Arivanandhan (Shizuoka Univ.), Yoshinari Kamakura (Osaka Univ.), Yasuhiro Hayakawa (Shizuoka Univ.)
(3) 14:40-15:05 Accuracy of Time Domain Charge Pumping Tokinobu Watanabe, Masahiro Hori (Univ. of Toyama), Toshiaki Tsuchiya (Shimane Univ.), Yukinori Ono (Univ. of Toyama)
(4) 15:05-15:30 Highly functionality of three-terminal nanodot array for multi-input and multi-output devices Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.)
  15:30-15:45 Break ( 15 min. )
(5) 15:45-16:10 Sensitivity Improvement in Refractive Index Measurement by Photodiode with Surface Plasmon Antenna Hiroaki Satoh, Shohei Iwata, Atsushi Ono, Hiroshi Inokawa (Shizuoka Univ.)
(6) 16:10-16:35 Ferroelectric device using P(VDF-TrFE) single crystalline nano-fiber Yoichiro Neo, Masashi Noyori, Tomoaki Masuzawa, Hidenori Mimura (Shizuoka Univ.)
(7) 16:35-17:00 Enhancement of carrier injection in OLEDs by field concentration to carbon nanotube thin film Tatsuya Yamada, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.)
(8) 17:00-17:25 Low pull-in voltage graphene nanoelectromechanical switch Jian Sun, Nozomu Kanetake, Takuo Chikuba, Manoharan Muruganathan, Hiroshi Mizuta (JAIST)
(9) 17:25-17:50 Higher frequency signal detection than the fundamental oscillation frequency in resonant tunneling super regenerative detectors Koichi Maezawa, Jie Pan, Yuichiro Kakutani, Taishu Nakayama, Masayuki Mori (Univ. Toyama)
Fri, Feb 6 AM 
09:30 - 12:20
(10) 09:30-10:15 [Invited Talk]
Nano Devices of Single Crystalline Nanowires
Takeshi Yanagida (Osaka Univ.)
(11) 10:15-10:40 Current Noise Characteristics in GaAs-based Nanowire FETs and Carbon Nanotube Devices Shinya Inoue, Seiya Kasai (Hokkaido Univ.), Agung Setiadi, Megumi Akai-Kasaya (Osaka Univ.)
(12) 10:40-11:05 Fabrication of top-gate carbon nanotube thin-film transistor with short channel by high-speed printing technique Michihiko Maeda, Kentaro Higuchi, Shigeru Kishimoto (Nagoya Univ.), Takuya Tomura, Masafumi Takesue, Katsuhiko Hata (Bando Chemical), Yutaka Ohno (Nagoya Univ.)
(13) 11:05-11:30 Fabrication and characterization of graphene single carrier transistor Takuya Iwasaki, Manoharan Muruganathan, Hiroshi Mizuta (JAIST)
(14) 11:30-11:55 Operation Speed Improvement of Carbon Nanotube Integrated Circuits on Flexible Substrate Toshitada Sanzen (Nagoya Univ.), Antti Kaskela, Patrik Laiho, Albert G. Nasibulin (Aalto Univ.), Shigeru Kishimoto (Nagoya Univ.), Esko I. Kauppinen (Aalto Univ.), Yutaka Ohno (Nagoya Univ.)
(15) 11:55-12:20 Electronic circuit implementation of amoeba-inspired solution search algorithm for optimization problems Ryo Wakamiya, Seiya Kasai (Hokkaido Univ.), Masashi Aono (Tokyo Inst. of Tech.), Makoto Naruse (NICT), Hiroyoshi Miwa (Kwansei Gakuin Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 40 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Seiya Kasai (Hokkaido Univ.)
TEL : 011-706-6509 Fax : 011-716-6004
E--mail : irciqei
Koji Matsunaga (NEC)
TEL : 044-435-8348
E--mail : k-fpc 
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E--mail: fffe 


Last modified: 2014-12-11 19:18:15


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