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Technical Committee on Integrated Circuits and Devices (ICD)
Chair: Takeshi Yamamura (Fujitsu Labs.) Vice Chair: Minoru Fujishima (Hiroshima Univ.)
Secretary: Osamu Watanabe (Toshiba)
Assistant: Takeshi Yoshida (Hiroshima Univ.), Makoto Takamiya (Univ. of Tokyo), Akira Tsuchiya (Kyoto Univ.), Pham Konkuha (Univ. of Electro-Comm.)
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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yuzou Oono (Univ. of Tsukuba) Vice Chair: Tatsuya Kunikiyo (Renesas)
Secretary: Rihito Kuroda (Tohoku Univ.)
Assistant: Tadashi Yamaguchi (Renesas)
DATE:
Mon, Aug 4, 2014 09:00 - 18:45
Tue, Aug 5, 2014 09:00 - 17:35
PLACE:
TOPICS:
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Mon, Aug 4 (09:00 - 18:45)
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(1) 09:00 - 09:50
[Invited Talk]
A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14μA Sleep Current using Reverse-Body-Bias Assisted 65nm SOTB CMOS Technology
Koichiro Ishibashi (UEC), Nobuyuki Sugii (LEAP), Kimiyoshi Usami (SIT), Hideharu Amano (KU), Kazutoshi Kobayashi (KIT), Cong-Kha Pham (UEC), Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Yasuo Yamaguchi, Hidekazu Oda, Takumi Hasegawa, Shinobu Okanishi, Hiroshi Yanagita (LEAP)
(2) 09:50 - 10:40
[Invited Talk]
An Ultra-Low-Power 2-step Wake-Up Receiver for Wireless Sensor Networks
Takayuki Abe, Kazutoshi Satou, Shigeki Nakamura, Yoichiro Horiuchi, Koji Imamura (Panasonic)
----- Break ( 10 min. ) -----
(3) 10:50 - 11:15
A 28nm High-k/MG Heterogeneous Multi-Core Mobile Application Processor with 2GHz Cores and Low-Power 1GHz Cores
Mitsuhiko Igarashi, Toshifumi Uemura, Ryo Mori, Hiroshi Kishibe, Masaaki Taniguchi, Kohei Wakahara, Toshiharu Saito, Masaki Fujigaya, Kazuki Fukuoka, Koji Nii, Takeshi Kataoka, Toshihiro Hattori (Renesas Electronics)
(4) 11:15 - 11:40
Testability Improvement for 12.8 GB/s Wide IO DRAM Controller with Small Area Prebonding TSV test and 1GHz Sampled Fully Digital Noise Monitor
Takao Nomura, Ryo Mori, Koji Takayanagi, Toshihiko Ochiai, Kazuki Fukuoka, Tsuyoshi Kida, Koji Nii, Sadayuki Morita (REL)
(5) 11:40 - 12:05
Non-Contact Connector and High Noise Immunity Transceiver for In-Vehicle LAN
Akira Okada, Atsutake Kosuge, Shu Ishizuka (Keio Univ.), Lechang Liu (Kyushu Univ.), Masao Taguchi, Hiroki Ishikuro, Tadahiro Kuroda (Keio Univ.)
----- Lunch Break ( 60 min. ) -----
(6) 13:05 - 13:55
[Invited Talk]
Research progress in steep slope devices and technologies to enhance ON current in TFETs
Takahiro Mori, Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Noriyuki Miyata, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota (AIST)
(7) 13:55 - 14:45
[Invited Talk]
STT-MRAM Development for Embedded Cache Memory
Toshihiro Sugii, Yoshihisa Iba, Masaki Aoki, Hideyuki Noshiro, Koji Tsunoda, Akiyoshi Hatada, Masaaki Nakabayashi, Yuuichi Yamazaki, Atsushi Takahashi, Chikako Yoshida (LEAP)
----- Break ( 10 min. ) -----
(8) 14:55 - 15:45
[Invited Talk]
A 90-nm Three-terminal MRAM Embedded Nonvolatile Microcontroller for Standby-Power-Critical Applications
Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara (NEC), Keizo Kinoshita, Shunsuke Fukami (Tohoku Univ.), Sadahiko Miura (NEC), Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.), Tadahiko Sugibayashi (NEC)
(9) 15:45 - 16:35
[Invited Talk]
A 32-bit CPU with Zero Standby Power and 1.5-clock Backup/2.5-clock Restore Achieved by Utilizing a 180-nm Crystalline Oxide Semiconductor Transistor
Jun Koyama, Atsuo Isobe, Hikaru Tamura, Kiyoshi Kato, Takuro Ohmaru, Wataru Uesugi, Takahiko Ishizu, Kazuaki Ohshima, Yasutaka Suzuki, Naoaki Tsutsui, Tomoaki Atsumi, Yutaka Shionoiri, Yukio Maehashi (SEL), Masahiro Fujita (Univ. of Tokyo), Shunpei Yamazaki (SEL)
----- Break ( 10 min. ) -----
(10) 16:45 - 18:45
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Tue, Aug 5 (09:00 - 17:35)
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(11) 09:00 - 09:50
[Invited Talk]
Ultra-Low Voltage (0.1V) Operation of Threshold Voltage Self-Adjusting MOSFET and SRAM Cell
Toshiro Hiramoto, Akitsugu Ueda, Seung-Min Jung, Tomoko Mizutani, Takuya Saraya (Univ. of Tokyo)
(12) 09:50 - 10:15
Statistical Analysis of Minimum Operation Voltage (Vmin) in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells
Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo)
----- Break ( 10 min. ) -----
(13) 10:25 - 10:50
Development of a Low Standby Power, Six-Transistor CMOS SRAM Employing a Single Power Supply
Ryusuke Ito (Chuo Univ.), Nobuaki Kobayashi (NUT), Tadayoshi Enomoto (Chuo Univ.)
(14) 10:50 - 11:15
40nm ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU
Yoshisato Yokoyama, Yuichiro Ishii, Hidemitsu Kojima, Atsushi Miyanishi, Yoshiki Tsujihashi, Shinobu Asayama, Kazutoshi Shiba, Koji Tanaka, Tatsuya Fukuda, Koji Nii, Kazumasa Yanagisawa (Renesas)
(15) 11:15 - 12:05
[Invited Talk]
Low-Power and High-Speed Nonvolatile FPGA by Adjacent Integration of MONOS/Logic and Novel Programming Scheme
Koichiro Zaitsu, Kosuke Tatsumura, Mari Matsumoto, Masato Oda, Shinobu Fujita, Shinichi Yasuda (Toshiba)
----- Lunch Break ( 60 min. ) -----
(16) 13:05 - 13:55
[Invited Talk]
Oxide Semiconductor-based Transistors Formed in LSI Interconnects
Hiroshi Sunamura, Naoya Furutake, Shinobu Saito, Mitsuru Narihiro, Yoshihiro Hayashi (REL)
(17) 13:55 - 14:20
Tr variance evaluation induced by probing pressure and its stress extraction methodology in 28nm High-K and Metal Gate process
Takeshi Okagaki, Takumi Hasegawa, Hiroyuki Takashino, Masako Fujii, Atsushi Tsuda, Koji Shibutani, Yoshinori Deguchi, Miho Yokota, Kazunori Onozawa (Renesas)
(18) 14:20 - 14:45
Circuit Design of Reconfigurable Dynamic Logic Based on Double Gate MOSFETs
Junki Kato, Shigeyoshi Watanabe, Hiroshi Ninomiya, Manabu Kobayashi, Yasuyuki Miura (SIT)
----- Break ( 10 min. ) -----
(19) 14:55 - 15:20
Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage
Azusa Oshima, Ryo Kishida, Michitarou Yabuuchi, Kazutoshi Kobayashi (KIT)
(20) 15:20 - 15:45
CMOS Relaxation Oscillator for a Real-Time Clock Application
Keishi Tsubaki, Tetsuya Hirose, Toshihiro Ozaki, Nobutaka Kuroki, Masahiro Numa (Kobe Univ.)
(21) 15:45 - 16:10
A Low Power , Area Efficient Frequency Calibration Technique with Shared Array Oscillator for Inductive-Coupling Transceiver
Naoki Kitazawa, Teruo Jyo, Hiroki Ishikuro (Keio Univ.)
(22) 16:10 - 16:35
Area-Efficient and Low-Power SAR ADC with Dynamic Comparator Threshold Configuring by Source Voltage Shifting
Masaki Yonekura, Kentaro Yoshioka, Hiroki Ishikuro (Keio Univ)
----- Break ( 10 min. ) -----
(23) 16:45 - 17:35
[Invited Talk]
Research Trends and Recent Development in Organic Electronics: Organic Transistor Based Flexible Wet Sensor Sheet for Biomedical Applications with Wireless Power and Data Transmission
Hiroshi Fuketa, Kazuaki Yoshioka, Tomoyuki Yokota, Wakako Yukita, Mari Koizumi, Masaki Sekino (Univ. of Tokyo/JST), Tsuyoshi Sekitani (Univ. of Tokyo/Osaka Univ./JST), Makoto Takamiya, Takao Someya, Takayasu Sakurai (Univ. of Tokyo/JST)
# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
=== Technical Committee on Integrated Circuits and Devices (ICD) ===
=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:
Thu, Oct 16, 2014 - Fri, Oct 17, 2014: Niche, Tohoku Univ. [Tue, Aug 12], Topics: Process Science and New Process Technology
Thu, Nov 6, 2014 - Fri, Nov 7, 2014: Kikai-Shinko-Kaikan Bldg. [Tue, Sep 16], Topics: Process, Device, Circuit Simulation, etc.
Last modified: 2014-07-04 13:42:47
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