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電子デバイス研究会(ED) [schedule] [select]
専門委員長 加地 徹 (豊田中研)
副委員長 原 直紀 (富士通研)
幹事 須原 理彦 (首都大東京), 上田 哲三 (パナソニック)
幹事補佐 葛西 誠也 (北大), 松永 高治 (NEC)

シリコン材料・デバイス研究会(SDM) [schedule] [select]
専門委員長 奈良 安雄 (富士通セミコンダクター)
副委員長 大野 裕三 (筑波大)
幹事 野村 晋太郎 (筑波大), 笹子 佳孝 (日立)

日時 2012年 6月27日(水) 08:40 - 19:00
2012年 6月28日(木) 08:30 - 12:00
2012年 6月29日(金) 08:15 - 12:40
議題 2012 先端半導体デバイスの基礎と応用に関するアジア太平洋ワークショップ 
会場名 沖縄県青年会館 
住所 〒900-0033 沖縄県那覇市久米2-15-23
交通案内 モノレール 旭橋駅下車 徒歩5分
http://www.okiseikan.or.jp/new/news.php
会場世話人
連絡先
琉球大学 野口 隆
098-864-1780
他の共催 ◆IEEK共催

6月27日(水) 午前  Opening Session
08:40 - 08:50
  08:40-08:50 Opening Address ( 10分 )
6月27日(水) 午前  Plenary Session
08:50 - 10:50
(1) 08:50-09:30 [基調講演]TCAD challenges and opportunities for predictive development Yongwoo Kwon・○Dae Sin Kim・Young-Kwan Park(Samsung Electronics)
(2) 09:30-10:10 [基調講演]More-than-Moore Devices based on Advanced CMOS Technologies ○Hitoshi Wakabayashi(Sony)
(3) 10:10-10:50 [基調講演]GaNパワーデバイスの最新技術 ○上田大助(パナソニック)
  11:00-11:10 Short Break ( 10分 )
6月27日(水) 午前  Si-based Power Device Technology
11:00 - 12:00
(4) 11:00-11:15 Electrical characteristics of IGBT using a field stop trench gate structure ○Ey Goo Kang(Far East Univ.)・Eun Sik Jung(Maplesemiconductor Incorporated)・Yong Tae Kim(KIST)
(5) 11:15-11:30 Optimization and characterization of 600V super junction power MOSFET using a deep trench structure ○Yong Tae Kim(KIST)・Eun Sik Jung(Maplesemiconductor Inc.)・Ey Goo Kang(Far East Univ.)
(6) 11:30-12:00 [招待講演]Gate Stack Technologies for Silicon Carbide Power MOS Devices ○Takuji Hosoi・Takashi Kirino・Yusuke Uenishi・Daisuke Ikeguchi・Atthawut Chanthaphan(Osaka Univ.)・Akitaka Yoshigoe・Yuden Teraoka(JAEA)・Shuhei Mitani・Yuki Nakano・Takashi Nakamura(ROHM)・Takayoshi Shimura・Heiji Watanabe(Osaka Univ.)
6月27日(水) 午前  Detectors and Sensors
11:00 - 12:15
(7) 11:00-11:30 [招待講演]III-nitride-based Visible-blind and Solar-blind Photodetectors ○Hai Lu・Rong Zhang・Youdou Zheng(School of ESE, Nanjing Univ.)
(8) 11:30-11:45 The Very Fast Transferred Pixel with a Multi-Pinchoff Photodiode for Wafer-Scale X-Ray Sensor ○Joonghyeok Byeon・Jongmin Kim・Won-Young Jung(Dongbu Hitek)・Ji-Hoon Lim・Jae-Kyung Wee(Soongsil Univ.)
(9) 11:45-12:15 [招待講演]Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors ○Kyung Rok Kim・Min Woo Ryu・Sunhae Shin・Hee Cheol Hwang・Kibog Park(UNIST)
  12:15-13:15 Lunch Break ( 60分 )
6月27日(水) 午後  MOSFETs and Memory Technology
13:15 - 15:00
(10) 13:15-13:30 Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors ○Sang Wan Kim(Seoul National Univ.)・Woo Young Choi(Sogang Univ.)・Min-Chul Sun・Hyun Woo Kim・Byung-Gook Park(Seoul National Univ.)
(11) 13:30-13:45 The Asymmetric I-V Characteristics of Vertical MOSFET Induced by Tapered Silicon Pillar ○Takuya Imamoto・Tetsuo Endoh(Tohoku Univ.)
(12) 13:45-14:00 A High Performance SRAM Sense Amplifier with Vertical MOSFET ○Hyoungjun Na・Tetsuo Endoh(Tohoku Univ.)
(13) 14:00-14:15 Effects of Random Dopant Fluctuations on NAND Flash Memory Cells Jungeun Kang・○Boram Han(Sogang Univ.)・Kyoung-Rok Han・Chung sung Jae・Gyu-Seog Cho・Sung-Kye Park・Seok-Kiu Lee(SK Hynix)・Woo Young Choi(Sogang Univ.)
(14) 14:15-14:30 Control Effect of New Optimized Structure of Planar Thin Floating Gate (FG) NAND Flash to Fringing Field ○Do-Bin Kim・Yoon Kim・Se Hwan Park・Wandong Kim・Joo Yun Seo・Seung-Hyun Kim・Byung-Gook Park(Seoul National Univ.)
(15) 14:30-14:45 A Novel CMOS-Based PNP BJT Structure for Analog Applications ○Seon-Man Hwang・Yi-Jung Jung・Hyuk-Min Kwon・Jae-Hyung Jang・Ho-Young Kwak・Sung-Kyu Kwon(Chungnam National Univ.)・Yi-Sun Chung・Da-Soon Lee・Jong-Kon Lee(Magnachip Semiconductor Inc.)・Hi-Deok Lee(Chungnam National Univ.)
(16) 14:45-15:00 100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits ○Hidetoshi Utsumi・Ryohei Kasahara・Yukihisa Nakao・Rihito Kuroda・Akinobu Teramoto・Shigetoshi Sugawa・Tadahiro Ohmi(Tohoku Univ.)
  15:00-15:15 Break ( 15分 )
6月27日(水) 午後  TFT Technology I
15:15 - 16:45
(17) 15:15-15:30 Field-induced degradation of organic field effect transistors under vacuum condition Hoonsang Yoon・○Youngjin Kang・Jongsun Choi・Hyungtak Kim(Hongik Univ.)
(18) 15:30-15:45 Nonvolatile Memory Thin-Film Transistors Using Solution-Processed Oxide Semiconducting Channel and Ferroelectric Polymer Gate Insulator Jun-Yong Bak(Kyung Hee Univ.)・Soon-Won Jung・Ho-Jun Ryu・Sang-Hee Ko Park・Chi-Sun Hwang(ETRI)・○Sung-Min Yoon(Kyung Hee Univ.)
(19) 15:45-16:00 Influence of co-sputtered HfO2-Ti gate dielectric in IZO-based Transparent thin film transistors ○Jungil Yang・Donghee Lee・Dongkyu Cho・Sanghyun Woo・Yoosung Lim・Sungmin Park・Daekuk Kim・Moonsuk Yi(PNU.)
(20) 16:00-16:15 A New RSD Bottom Gate Poly-Si Thin Film Transistor With Inside Spacer ○Yi-Hsiang Chiu・Shan-Jen Yang・Feng-Tso Chien(Feng Chia Univ.)・Chii-Wen Chen(Minghsin Univ.)
(21) 16:15-16:30 The study on A Novel Asymmetric Poly-Si Thin Film Transistor With Low Drain Electric Field ○Meng-Shan Chi・Tzung-Ju Lin・Feng-Tso Chien(Feng Chia Univ.)・Chii-Wen Chen(Minghsin Univ.)
(22) 16:30-16:45 Influence of grain size deviation on device characteristics of TFTs and displays for OLED driving ○Katsuya Shirai・Takashi Noguchi(Univ. of the Ryukyus)
  16:45-17:15 Break ( 30分 )
6月27日(水) 午後  TFT Technology II
17:15 - 18:45
(23) 17:15-17:30 Crystallization of a-Si Films with Smooth Surface Using Blue-Multi-Laser-Diode-Annealing ○Tatsuya Okada・Jean de Dieu Mugiraneza・Katsuya Shirai・Takuma Nishinohara・Tomoyuki Mukae・Keisuke Yagi・Takashi Noguchi(Univ. Ryukyus)
(24) 17:30-17:45 Characterization of Optimized Sputtered Poly-Si Films by Blue-Multi-Laser-Diode Annealing for High Performance Displays ○Takuma Nishinohara・J. D. Mugiraneza・Katsuya Shirai・Tatsuya Okada・Takashi Noguchi(Univ. of the Ryukyus)
(25) 17:45-18:00 Effective Annealing of Si Films as an advanced LTPS ○Takashi Noguchi・Takuma Nishinohara・Jean de Dieu Mugiraneza・Katsuya Shirai・Tatsuya Okada(Univ. Ryukyus)
(26) 18:00-18:15 Improvement of Low-Temperature-Deposited SiO2 and Si/SiO2 interface Properties by Thermal-Plasma-Jet Annealing and Heat Treatment in High-Pressure H2O Vapor ○Shunki Koyanagi・Shohei Hayashi・Tsubasa Mizuno・Kouhei Sakaike・Hiroaki Hanafusa・Seiichiro Higashi(Hiroshima Univ.)
(27) 18:15-18:30 Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth ○Yuki Tojo・Ryo Matsumura・Hiroyuki Yokoyama・Masashi Kurosawa・Kaoru Toko・Taizoh Sadoh・Masanobu Miyao(Kyushu Univ.)
(28) 18:30-18:45 Formation of (111)-oriented large-grain Ge crystal on insulator at low-temperature by gold-induced crystallization technique ○Jonghyeok Park・Tsuneharu Suzuki・Masanobu Miyao・Taizoh Sadoh(Kyushu Univ.)
6月27日(水) 午後  Interconnects and Integration Technologies
13:15 - 15:00
(29) 13:15-13:30 Loss characteristic of Comb-type Capacitive Transmission Line on MMIC ○Eui-Hoon Jang・Jang-Hyeon Jeong・Sung-Jo Han・Ki-Jun Son・Young Yun(Korea Maritime Univ.)
(30) 13:30-13:45 Loss characteristic of Coplanar Waveguide Employing Periodic Structure on RFIC ○Jang-Hyeon Jeong・Eui-Hoon Jang・Sung-Jo Han・Ki-Jun Son・Young Yun(Korea Maritime Univ.)
(31) 13:45-14:00 A Simple Dual-Loop Optoelectronic Oscillator with Reduced Spurious Tones Using a Multi-Electrode Semiconductor Laser ○Jun-Hyung Cho・Seo-Weon Heo・Hyuk-Kee Sung(Hongik Univ.)
(32) 14:00-14:15 A chip scale wafer level packaging for LED using surface aligning technique. ○Jin Kwan Kim・Hee Chul Lee(KAIST)
(33) 14:15-14:30 Stress Measurement Errors induced by the Strain Effects in Resistor-based Stress Sensors on (111) silicon ○Chun-Hyung Cho・Ho-Young Cha(Hongik Univ.)
(34) 14:30-14:45 Comparison of thin film properties of WN diffusion barrier prepared by atomic layer deposition using metal organic and metal halide reactant gases ○Yeong Hyeon Hwang(KIST)・Won-Ju Cho(Kwangwoon Univ.)・Yong Tae Kim(KIST)
(35) 14:45-15:00 Fabrication of β-FeSi2 thin films on Si using solid-phase growth reaction from Fe and FeSi sources ○Katsuaki Momiyama・Kensaku Kanomata・Takahiko Suzuki・Shigeru Kubota・Fumihiko Hirose(Yamagata Univ.)
  15:00-15:15 Break ( 15分 )
6月27日(水) 午後  Circuit Technology I
15:15 - 17:00
(36) 15:15-15:45 [招待講演]CIS in high-end mobile camera ○Kangbong Seo・Kyoungin Lee・Siwook Yoo・Sangdong Yoo・Kyoungdong Yoo(SK Hynix)
(37) 15:45-16:15 [招待講演]Nonlinear Three Branch Nano-Junction Devices and Their Application to Logic Circuits ○Seiya Kasai(Hokkaido Univ.)・Shaharin Fadzli Abd Rahman(UTM/Hokkaido Univ.)・Masaki Sato・Xiang Yin(Hokkaido Univ.)・Toshihiko Maemoto(Osaka Inst. Tech.)
(38) 16:15-16:30 A 140-GHz Fully Differential Common-Source Amplifier in 65nm CMOS ○Hyunchul Kim・Daekeun Yoon・Jae-Sung Rieh(Korea Univ.)
(39) 16:30-16:45 An Area-Efficient CMOS Delay-Locked Loop ○Sungkeun Lee・Se-Weon Heo・Jongsun Kim(Hongik Univ.)
(40) 16:45-17:00 A Wide Range and High Resolution CMOS DCC ○Sangwoo Han・Jongsun Kim(Hongik Univ.)
  17:00-17:15 Break ( 15分 )
6月27日(水) 午後  Circuit Technology II
17:15 - 19:00
(41) 17:15-17:30 A 0.5-V 2.4-GHz CMOS Voltage-Controlled Oscillator for Wireless Sensor Network Application ○Seunghyeon Kim・Hyunchol Shin(Kwangwoon Univ.)
(42) 17:30-17:45 A 2.4-GHz CMOS Single-Chip OOK Transceiver for Wireless Sensor Network Applications ○Seunghyeon Kim・Hyun Kim・Hyunchol Shin(Kwangwoon Univ.)
(43) 17:45-18:00 The Robust Cgd/Cgs Measurement Method of 85V nLDMOS ○Won-Young Jung・Jin-Soo Kim・Taek-Soo Kim(Dongbu Hitek)
(44) 18:00-18:15 Design of Small-Area and High-Reliability 512-Bit EEPROM IP and its Measurement ○Liyan Jin・Geon-Soo Yonn・Dong-Hoon Lee・Ji-Hye Jang・Mu-Hun Park・Pan-Bong Ha・Young-Hee Kim(Changwon National Univ.)
(45) 18:15-18:30 Design of a Differential Paired eFuse One-Time Programmable Memory IP and its Measurement ○Huiling Yang・Min-Sung Kim・Ji-Hye Jang・Mu-hun Park・Pan-Bong Ha・Young-Hee Kim(Changwon National Univ.)
(46) 18:30-18:45 A Design of 5 - 6 GHz Band Rat-Race Hybrid Ring Coupler with Improved Phase-Error for Microstrip Structure ○Kyunghoon Kim・Dohyung Kim・Junghyun Shin・Jinwook Burm(Sogang Univ.)
(47) 18:45-19:00 A Power-Efficient 4-PAM Serial Link Receiver using a fully differential Rail-to-Rail input Dynamic Latch for Wide Dynamic Range ○Junan Lee・Daeho Yun・Bongsub Song・Jinwook Burm(Sognag Univ.)
6月28日(木) 午前  Memory Technology
08:30 - 10:40
(48) 08:30-08:45 Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory ○Min Su Han・Yeong Hwan Kim・Kyung Soo Kim・Jae Min Lee・Youngcheol Oh・Woo Young Choi(Myongji Univ.)・Woo Young Choi(Sogang Univ.)・Il Hwan Cho(Myongji Univ.)
(49) 08:45-09:00 Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior ○Akio Ohta(Hiroshima Univ.)・Katsunori Makihara(Nagoya Univ.)・Mitsuhisa Ikeda・Hideki Murakami・Seiichiro Higashi(Hiroshima Univ.)・Seiichi Miyazaki(Nagoya Univ.)
(50) 09:00-09:15 Characterization of Resistive Switching of Pt/Si-rich Oxide/TiN System ○Motoki Fukusima(Nagoya Univ.)・Akio Ohta(Hiroshima Univ.)・Katsunori Makihara・Seiichi Miyazaki(Nagoya Univ.)
(51) 09:15-09:30 Nonvolatile Polymer Memory-cell embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene ○Jong-Dae Lee・HyunMin Seung・Chang-Hwan Kim・Jea-Gun Park(Hanyang Uni.)
(52) 09:30-09:45 Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar structures by Conducting-Probe Atomic Force Microscopy ○Daichi Takeuchi・Katsunori Makihara(Nagoya Univ.)・Mitsuhisa Ikeda(Hiroshima Univ.)・Seiichi Miyazaki(Nagoya Univ.)・Hirokazu Kaki・Tsukasa Hayashi(NISSIN ELECTRIC Co. Ltd.,)
(53) 09:45-10:00 Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures ○Mitsuhisa Ikeda(Hiroshima Univ.)・Katsunori Makihara・Seiichi Miyazaki(Nagoya Univ.)
  10:00-10:40 Break ( 40分 )
6月28日(木) 午前  Energy Harvesting
08:30 - 09:45
(54) 08:30-09:00 [招待講演]Voltage Multiplier Circuits and Radio Wave Generation Module for Energy Harvesting System Saejeong Choi・Changsun Kim・Hyunshin Lee・Inyoung Kim・Dongchul Park(MJU)・Sooyoung Min・Yunsik Lee(KETI)・○Taikyeong Jeong(MJU)
(55) 09:00-09:30 [招待講演]Exploitation of Hierarchical Nanomaterials for Improving Light-Harvesting and Charge Collecting Properties of Dye-sensitized Solar Cells ○Hyun Suk Jung(SKKU)
(56) 09:30-09:45 Lead Zirconate Titanate Acoustic Energy Harvesters for use in high sound pressure environments ○Tomohiro Matsuda・Saori Hagiwara・Shuntaro Miyake・Kazuki Tomii・Satoshi Iizumi・Shungo Tomioka・Shu Kimura・Kyohei Tsujimoto・Yusuke Uchida・Yasushiro Nishioka(Nihon Univ.)
6月28日(木) 午前  Gate Stack Technology
09:45 - 10:30
(57) 09:45-10:00 Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer ○Kuniaki Hashimoto・Akio Ohta・Hideki Murakami・Seiichiro Higashi(Hiroshima Univ.)・Seiichi Miyazaki(Nagoya Univ.)
(58) 10:00-10:15 Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures ○Kusumandari・Wakana Takeuchi・Kimihiko Kato・Shigehisa Shibayama・Mitsuo Sakashita・Noriyuki Taoka・Osamu Nakatsuka・Shigeaki Zaima(Nagoya Univ.)
(59) 10:15-10:30 Effect of Si surface roughness on EOT reduction for HfON gate insulator formed by ECR plasma oxidation of HfN ○Dae-Hee Han・Shun-ichiro Ohmi(Tokyo Tech)
  10:30-10:40 Short Break ( 10分 )
  10:40-12:00 Poster session ( 80分 )
  12:00-13:00 Lunch Break ( 60分 )
  13:00-18:00 Excursion ( 300分 )
  18:00-20:00 Banquet ( 120分 )
6月29日(金) 午前  Advanced Si Technology
08:15 - 10:30
(60) 08:15-08:45 [招待講演]The Stability of Bandgap Reference Voltage with Device Structures ○Sang-Gi Lee・Jun-Woo Song・Eun-Sang Jo・Kwang-Dong Yoo(Dongbu HiTek)
(61) 08:45-09:15 [招待講演]Potential of GeSn Alloys for Application to Si Nanoelectronics ○Shigeaki Zaima・Yosuke Shimura・Marika Nakamura・Wakana Takeuchi・Mitsuo Sakashita・Osamu Nakatsuka(Nagoya Univ.)
(62) 09:15-09:45 [招待講演]III-V/Ge integration on Si platform for electronic-photonic integrated circuits ○Mitsuru Takenaka・Shinichi Takagi(Univ. Tokyo)
(63) 09:45-10:15 [招待講演]超低電力応用に向けた薄膜BOX-SOI (SOTB) CMOS技術 ○杉井信之・岩松俊明・山本芳樹・槇山秀樹・角村貴昭・篠原博文・青野英樹・尾田秀一・蒲原史朗・山口泰男(超低電圧デバイス技研組合/ルネサス エレクトロニクス)・水谷朋子・平本俊郎(東大)
(64) 10:15-10:30 Novel Tunneling Field-Effect Transistor with Sigma-shape Embedded SiGe Sources and Recessed Channel Min-Chul Sun(SNU and SEC)・○Sang Wan Kim・Garam Kim・Hyun Woo Kim・Hyungjin Kim・Jong-Ho Lee・Hyungcheol Shin・Byung-Gook Park(SNU)
  10:30-10:45 Break ( 15分 )
6月29日(金) 午前  MOSFET Reliability
10:45 - 12:30
(65) 10:45-11:15 [招待講演]Decomposition analysis of on-current variability of FinFETs ○Takashi Matsukawa・Yongxun Liu・Kazuhiko Endo・Shinichi O'uchi・Meishoku Masahara(AIST)
(66) 11:15-11:45 [招待講演]Thermal-Aware Device Desing of Nanoscale MOS Transistors ○Ken Uchida(Keio Univ.)・Tsunaki Takahashi・Nobuyasu Beppu(Tokyo Tech)
(67) 11:45-12:00 Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs ○Tomoko Mizutani・Anil Kumar・Toshiro Hiramoto(Univ. of Tokyo)
(68) 12:00-12:15 Reliability Measurement of PFETs under Post Fabrication Self-Improvement Scheme for SRAM ○Nurul Ezaila Alias・Anil Kumar・Takuya Saraya(Univ. of Tokyo)・Shinji Miyano(STARC)・Toshiro Hiramoto(Univ. of Tokyo)
(69) 12:15-12:30 The Effects of Fluorine Implantation on 1/f noise and reliability characteristics of NMOSFET ○Jae-Hyung Jang・Hyuk-Min Kwon・Ho-Young Kwak・Sung-Kyu Kwon・Seon-Man Hwang・Jong-Kwan Shin(Chungnam National Univ.)・Seung-Yong Sung・Yi-Sun Chung・Da-Soon Lee・Jong-Kon Lee(Magnachip Semiconductor Inc)・Hi-Deok Lee(Chungnam National Univ.)
6月29日(金) 午前  Widegap and III-V Semiconductor Devices
08:15 - 10:30
(70) 08:15-08:45 [招待講演]Integrated Design Platform for Power Electronics Applications with GaN Devices ○Kenji Mizutani・Hiroaki Ueno・Yuji Kudoh・Shuichi Nagai・Kaoru Inoue・Nobuyuki Otsuka・Tetsuzo Ueda・Tsuyoshi Tanaka・Daisuke Ueda(Panasonic)
(71) 08:45-09:15 [招待講演]Current Status of GaN Technologies in ETRI ○Jae Kyoung Mun・Jong-Won Lim・Sang Choon Ko・Seong-il Kim・Eun Soo Nam(ETRI)
(72) 09:15-09:45 [招待講演]New widegap semiconductor Ga2O3 MESFETs and Schottky barrier diodes ○Masataka Higashiwaki(NICT/JST)・Kohei Sasaki(Tamura Corp./NICT)・Akito Kuramata(Tamura Corp.)・Takekazu Masui(Koha Co., Ltd.)・Shigenobu Yamakoshi(Tamura Corp.)
(73) 09:45-10:15 [招待講演]InAs Quantum-Well MOSFET (Lg = 100 nm) for Logic and Microwave Applications ○Tae-Woo Kim・Richard Hill(SEMATECH)・Dae-Hyun Kim(Teledyne)・Jesus A. del Alamo(MIT)・Chad D. Young・Dmitry Veksler・Chang Yong Kang(SEMATECH)・Jungwoo Oh(Yonsei Univ.)・Chris Hobbs・Paul D. Kirsch・Raj Jammy(SEMATECH)
(74) 10:15-10:30 Vertical InGaAs MOSFET with HfO2 gate Jun Hirai・Tomoki Kususaki・Shunsuke Ikeda・○Yasuyuki Miyamoto(Tokyo Tech)
  10:30-10:45 Break ( 15分 )
6月29日(金) 午前  Widegap and Nanowire Devices
10:45 - 12:15
(75) 10:45-11:00 ICPCVD SiO2 for AlGaN/GaN MISHFET application ○Bong-Ryeol Park・Jae-Gil Lee・Hyungtak Kim・Chun-Hyung Cho・Ho-Young Cha(Hongik Univ.)
(76) 11:00-11:15 Improved current stability in multi-mesa-channel AlGaN/GaN HEMTs ○Kota Ohi・Tamotsu Hashizume(Hokkaido Univ.)
(77) 11:15-11:30 Fabrication and Characterization of Asymmetric-Gate GaAs Nanowire Transistors for Electrical Brownian Ratchet ○Takayuki Tanaka・Yuki Nakano・Toru Muramatsu・Seiya Kasai(Hokkaido Univ.)
(78) 11:30-12:00 [招待講演]Carbon nanotube-based plastic electronics ○Yutaka Ohno(Nagoya Univ., Aalto Univ.)・Dong-ming Sun・Kentaro Higuchi(Nagoya Univ.)・Marina Y. Timmermans・Antti Kaskela・Albert G. Nasibulin(Aalto Univ.)・Shigeru Kishimoto(Nagoya Univ.)・Esko I. Kauppinen(Aalto Univ.)・Takashi Mizutani(Nagoya Univ.)
(79) 12:00-12:15 Solution-based high-frequency field-effect transistors with purified semiconductor carbon nanotubes ○Masaki Inagaki・Kensuke Hata・Kazunari Shiozawa・Yasumitsu Miyata・Yutaka Ohno・Shigeru Kishimoto・Hisanori Shinohara・Takashi Mizutani(Nagoya Univ.)
  12:15-12:30 Break ( 15分 )
6月29日(金) 午後  Closing session
12:30 - 12:40
  12:30-12:40 Closing Remarks ( 10分 )
6月28日(木) 午前  Poster Session
10:40 - 12:00
(80) 10:40-12:00 [ポスター講演]Rigorous Design for Gate-Dielectric and n-Pocket Region of Tunneling Field-Effect Transistors and Its High Performances. ○Jae Hwa Seo・Jae Sung Lee・Yun Soo Park・Jung-Hee Lee・In Man Kang(Kyunpook Nat'l Univ.)
(81) 10:40-12:00 [ポスター講演]Dependence of Schottky barrier height on the junction size of bcc-metal/n-Ge(111) contacts ○Hirotaka Yoshioka・Kenji Kasahara・Toshihiro Nishimura・Shinya Yamada・Masanobu Miyao・Kohei Hamaya(Kyushu Univ.)
(82) 10:40-12:00 [ポスター講演]Effect of hydrofluoric acid treatment on InAlN surfaces ○Takuma Nakano・Masamichi Akazawa(Hokkaido Univ.)
(83) 10:40-10:55 [ポスター講演]The surface morphology and electrical properties of NiO with various RF power and O2/(Ar+O2) gas mixture ○Jonghun Kim・Gyohun Koo・Changju Lee・Sungho Hahm(Kyungpook National Univ.)・Youngchul Jung(Gyeongju Univ.)・Yougsoo Lee(Kyungpook National Univ.)
(84) 10:40-12:00 [ポスター講演]Mold transfer processed organic light emitting diodes using patterned conductive polymer electrode ○Hyun Jun Lee・Young Wook Park・Tae Hyun Park・Eun Ho Song(Korea Univ.)・Se Joong Shin(Korea univ.)・Hakkoo Kim・Kyung bok Choi・Ju Hyun Hwang(Korea Univ.)・Jinwoo Lee(Micobiomed. Ltd)・Jinnil Choi(Hanbat National Univ.)・Byeong-Kwon Ju(Korea Univ.)
(85) 10:40-12:00 [ポスター講演]Development of scanning nano-SQUIDs for local magnetic imaging. ○Yusuke Shibata(Tsukuba Univ.)・Ryosuke Ishiguro(Tokyo Univ. of Science)・Hiromi Kashiwaya・Satoshi Kashiwaya(AIST)・Hideaki Takayanagi(Tokyo Univ. of Science/NIMS)・Shintaro Nomura(Tsukuba Univ.)
(86) 10:40-12:00 [ポスター講演]Degradation Characteristics of high voltage AlGaN/GaN-on-Si Heterostructure FETs Shinhyuk Choi・○Hoonsang Yoon・Dongmin Keum・Jae-Gil Lee・Ho-Young Cha・Hyungtak Kim(Hongik Univ.)

講演時間
基調講演発表 30 分 + 質疑応答 10 分
招待講演発表 20 分 + 質疑応答 10 分
一般講演発表 10 分 + 質疑応答 5 分
ポスター講演発表 80 分

問合先と今後の予定
ED 電子デバイス研究会(ED)   [今後の予定はこちら]
問合先 原 直紀 (富士通研究所)
TEL : 046-250-8242、FAX : 046-250-8168
E--mail : o
津田 邦男(東芝)
TEL : 044-549-2142、FAX : 044-520-1501
E--mail : oba
須原 理彦(首都大)
TEL : 042-677-2765 Fax : 042-677-2756
E--mail : t
上田 哲三(パナソニック)
TEL:075-956-8273、FAX:075-956-9110
E--mailzopac 
SDM シリコン材料・デバイス研究会(SDM)   [今後の予定はこちら]
問合先 小野 行徳(NTT)
〒930-8555
富山市五福3190
富山大学大学院理工学研究部
ナノ・新機能材料学域 ナノマテリアル・システムデザイン学系
(電気電子システム工学科担当)
大学院棟7204
電話(Fax) 076-445-6883
email: oengu- 


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