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=============================================== Technical Committee on Electron Device (ED) Chair: Tamotsu Hashidume (Hokkaido Univ.) Vice Chair: Toru Kaji (Toyota Central R&D Labs.) Secretary: Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.) Assistant: Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.) =============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Shigeyoshi Watanabe (Shonan Inst. of Tech.) Vice Chair: Toshihiro Sugii (Fujitsu Microelectronics) Secretary: Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.) Assistant: Katsunori Onishi (Kyushu Inst. of Tech.), Yukinori Ono (NTT) DATE: Mon, Feb 22, 2010 13:00 - 16:55 Tue, Feb 23, 2010 09:30 - 12:50 PLACE: Okinawa-ken Seinenn-Kaikan(2-15-23 Kume, Naha-shi, 900-0033 Japan.http://www.okinawakenseinenkaikan.or.jp/new/page.php?7. Prof. Takashi Noguchi. +81-98-864-1780) TOPICS: Functional Nano Device and Related Technology ---------------------------------------- Mon, Feb 22 PM (13:00 - 14:40) ---------------------------------------- (1) 13:00 - 13:25 Neuromorphic adiabatic quantum computation based on phosphorus nuclear spin array in Si Mitsunaga Kinjo (Univ. of the Ryukyus), Shigeo Sato (Tohoku Univ.) (2) 13:25 - 13:50 Seebeck coefficient in heavily-doped SOI layers Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.) (3) 13:50 - 14:15 Stochastic Resonance Devices Based on Carbon Nanotube Field-Effect Transistors Yasufumi Hakamata, Yasuhide Ohno, Kenzo Maehashi (ISIR Osaka Univ.), Seiya Kasai (RCIQE Hokkaido Univ.), Koichi Inoue, Kazuhiko Matsumoto (ISIR Osaka Univ.) (4) 14:15 - 14:40 Analysis on Stochastic Resonance Behavior of Single Electron in Quantum Dots Seiya Kasai (Hokkaido Univ/JST), Yuta Shiratori, Kensuke Miura (Hokkaido Univ.) ----- Break ( 10 min. ) ----- ---------------------------------------- Mon, Feb 22 PM (14:50 - 16:55) ---------------------------------------- (5) 14:50 - 15:15 MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi (Nagoya Univ.) (6) 15:15 - 15:40 Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory Tatsuya Okada (Univ. of the Ryukyus), Seiichiro Higashi, Katsunori Makihara, Yasuo Hiroshige, Seiichi Miyazaki (Hiroshima Univ.) (7) 15:40 - 16:05 Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration Shunsuke Ueno, Yusuke Tomoda, Watari Kume, Michinobu Hanada, Kazutoshi Takiya, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) (8) 16:05 - 16:30 Fabrication of Planar-Type Ferromagnetic Tunnel Junctions Using Field-Emission-Induced Electromigration Kazutoshi Takiya, Yusuke Tomoda, Takato Watanabe, Watari Kume, Shunsuke Ueno, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech) (9) 16:30 - 16:55 Observation of enhanced MR effects in a single electron transistor with ferromagnetic lead electrodes Nobuyuki Tamura, Kento Kikuchi, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro-Comm.) ---------------------------------------- Tue, Feb 23 AM (09:30 - 11:25) ---------------------------------------- (10) 09:30 - 10:10 [Invited Talk] Effect of interface properties on characteristics of carbon nanotube FETs Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) (11) 10:10 - 10:35 CMOS inverters based on carbon nanotube field-effect transistors with SiNx passivation films Takaomi Kishimoto, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto (ISIR, Osaka Univ.) (12) 10:35 - 11:00 Fabrication of nanowire-based sequential circuits using gate-controlled GaAs three-branch nanowire junctions Hiromu Shibata, Daisuke Nakata, Yuta Shiratori (Hokkaido Univ), Seiya Kasai (Hokkaido Univ/JST) (13) 11:00 - 11:25 Compact Reconfigurable BDD Logic Circuits utilizing GaAs Nanowire Network Yuta Shiratori, Kensuke Miura (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ./JST) ----- Break ( 10 min. ) ----- ---------------------------------------- Tue, Feb 23 AM (11:35 - 12:50) ---------------------------------------- (14) 11:35 - 12:00 Detectors of Terahertz and Infrared Radiation Based on p-i-n Single- and Multiple Graphene Layer Structures Victor Ryzhii, Maxim Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.), Vladimir Mitin (Buffalo Univ.) (15) 12:00 - 12:25 Electrical Property of CNT/cellulose Composite Paper Tomo Tanaka, Eiichi Sano (Hokkaido Univ.), Kousuke Akiyama, Masanori Imai (Tokushu Paper) (16) 12:25 - 12:50 Nonvolatile memory based on carbon nanotube field-effect transistors Kenzo Maehashi, Takahiro Ohori, Satoshi Nagaso, Koichi Inoue, Kazuhiko Matsumoto (Osaka Univ.) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. Invited Talk will have 35 minutes for presentation and 5 minutes for discussion. === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Thu, Apr 22, 2010 - Fri, Apr 23, 2010: [Wed, Feb 17] Thu, May 13, 2010 - Fri, May 14, 2010: Shizuoka University (Hamamatsu Campus) [Wed, Mar 24], Topics: Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） # SECRETARY: Koichi Murata（NTT) TEL：+81-46-240-2871、FAX：+81-46-270-2872 E-mail：     aecl   Hara Naoki （Fujitsu Lab.） TEL : +81-46-250-8242、FAX : +81-46-250-8168 E-mail :   o      Kunio Tsuda（Toshiba） TEL : +81-44-549-2142、FAX : +81-44-520-1501 E-mail :   o   baMichihiko Suhara (Tokyo Metropolitan Univ.) TEL : +81-42-677-2765 Fax : +81-42-677-2756 E-mail :      t === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Fri, Apr 23, 2010: Okinawa-Ken-Seinen-Kaikan Bldg. [Fri, Feb 26], Topics: Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics Thu, May 13, 2010 - Fri, May 14, 2010: Shizuoka University (Hamamatsu Campus) [Wed, Mar 24], Topics: Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） # SECRETARY: Hisahiro Ansai(Sony) Tel 046-201-3297 Fax046-202-6572 E-mail: Hi   Ani nyLast modified: 2009-12-15 12:55:22 |
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