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=============================================== Technical Committee on Electron Device (ED) Chair: Masaaki Kuzuhara (Univ. of Fukui) Vice Chair: Tamotsu Hashidume (Hokkaido Univ.) Secretary: Shin-ichiro Takatani (Hitachi), Koichi Murata (NTT) Assistant: Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba) =============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Shigeyoshi Watanabe (Shonan Inst. of Tech.) Vice Chair: Toshihiro Sugii (Fujitsu Microelectronics) Secretary: Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) Assistant: Shun-ichiro Ohmi (Tokyo Inst. of Tech.) =============================================== DATE: Wed, Jul 9, 2008 10:00 - 17:50 Thu, Jul 10, 2008 09:00 - 11:55 Fri, Jul 11, 2008 09:00 - 16:05 PLACE: Kaderu27 (Sapporo)(N2-7, Chuo-ku, Sapporo, 060-0002, Japan. 10 min walk from JR Sapporo st.http://www.kaderu27.or.jp/index.htm) TOPICS: 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices ---------------------------------------- Wed, Jul 9 AM Plenary Session (10:00 - 10:40) ---------------------------------------- (1) 10:00 - 10:40 [Keynote Address] III-V Semiconductor Epitaxial Nanowires and Their Applications Takashi Fukui, Shinjiro Hara, Kenji Hiruma, Junichi Motohisa (Hokkaido Univ.) ----- Break ( 10 min. ) ----- ---------------------------------------- Wed, Jul 9 AM Session 1: Compound Semiconductor Devices (10:50 - 12:20) ---------------------------------------- (1) 10:50 - 11:15 [Invited Talk] Growth of InAs quantum dot and device application Il-Ki Han (KIST) (2) 11:15 - 11:40 [Invited Talk] Narrow-gap III-V Semiconductor Technology: Lattice-Mismatched Growth and Epitaxial Lift-off for Heterogeneous Integration Toshi-kazu Suzuki (JAIST) (3) 11:40 - 12:05 [Invited Talk] AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) (4) 12:05 - 12:20 Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition Hyeong-Seon Yun, Ka-Lam Kim, No-Won Kwak, Woo-Seok Lee, Sang-Hyun Jeong (Cheongju Univ.), Ju-Ok Seo (Itswell), Kwang-Ho Kim (Cheongju Univ.) ----- Lunch ( 60 min. ) ----- ---------------------------------------- Wed, Jul 9 PM Session 2: Silicon Devices I (13:20 - 15:45) ---------------------------------------- (1) 13:20 - 13:45 [Invited Talk] Guidelines for the Threshold Voltage Control of Metal/HfSiON system Akira Nishiyama, Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Junji Koga, Masato Koyama (Toshiba) (2) 13:45 - 14:10 [Invited Talk] Precise Ion Implantation for Advanced MOS LSIs Toshiharu Suzuki (SEN) (3) 14:10 - 14:35 [Invited Talk] Quantum Modeling of Carrier Transport through Silicon Nano-devices Nobuya Mori, Hideki Minari (Osaka Univ.) (4) 14:35 - 15:00 [Invited Talk] High-K Dielectric for Charge Trap-type Flash Memory Application Byung-Jin Cho (KAIST), Wei He, Jing Pu (National Univ. of Singapore) (5) 15:00 - 15:15 Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50 nm DRAM Cell Transistors Han-A Jung, Ki-Heung Park (Kyungpook National Univ.), Hyuck-In Kwon (Daegu Univ. Jillyang), Jong-Ho Lee (Kyungpook National Univ.) (6) 15:15 - 15:30 A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation Hiroshi Imai (Tohoku Univ.), Masahiko Sugimura, Masafumi Kawasaki (Zeon), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) (7) 15:30 - 15:45 CMOS phase shift Oscillator Using the Conduction of Heat Takaaki Hirai, Tetsuya Asai, Yoshihito Amemiya (Hokkaido univ.) ----- Break ( 10 min. ) ----- ---------------------------------------- Wed, Jul 9 PM Session 3: Emerging Devices I (15:55 - 17:50) ---------------------------------------- (1) 15:55 - 16:20 [Invited Talk] Characterization of Carbon Nanotube FETs by Electric Force Microscopy Takashi Mizutani (Nagoya Univ.) (2) 16:20 - 16:45 [Invited Talk] Recent Progress on Nanoprobe and Nanoneedle Masaki Tanemura, Masashi Kitazawa, Yoshitaka Sugita, Ako Miyawaki, Masaki Kutsuna, Yasuhiko Hayashi (Nagoya Inst. of Tech.), Shu Ping Lau (Nanyang Tech. Univ.) (3) 16:45 - 17:10 [Invited Talk] Technical Issues and Applications of Printed Thin-Film Devices Yongtaek Hong, Jaewook Jeong, Jinwoo Kim, Sanbwoo Kim, Minkyoo Kwon, Seungjun Chung (Seoul National Univ.) (4) 17:10 - 17:35 [Invited Talk] A Ta2O5 Solid-electrolyte Switch with Improved Reliability Naoki Banno, Toshitsugu Sakamoto, Noriyuki Iguchi, Shinji Fujieda (NEC Corp.), Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono (NIMS) (5) 17:35 - 17:50 Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.) ---------------------------------------- Thu, Jul 10 AM Session 4A: Nonvolatile Memory (09:00 - 10:30) ---------------------------------------- (1) 09:00 - 09:15 Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Hiroshima Univ.) (2) 09:15 - 09:30 Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories Doo-Hyun Kim, Il Han Park, Byung-Gook Park (Seoul National Univ.) (3) 09:30 - 09:45 3-dimensional Terraced NAND(3D TNAND) Flash Memory Yoon Kim, Gil-Seong Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) (4) 09:45 - 10:00 Design of Unique two-bit/cell SONOS Flash Memory Device Utilizing an Advanced Saddle Structure Sang-Su Park, Se Woong Oh, Kyeong Rok Kim, Hyun Joo Kim, Tae Whan Kim, Kae Dal Kwack (Hanyang Univ.) (5) 10:00 - 10:15 Using shielding metal for elimination of floating gate coupling effect Gil-Sung Lee (Seoul National Univ.) (6) 10:15 - 10:30 Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL) Seongjae Cho, Il Han Park, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ----- Break ( 10 min. ) ----- ---------------------------------------- Thu, Jul 10 AM Session 5A: Silicon Devices II (10:40 - 11:55) ---------------------------------------- (1) 10:40 - 10:55 Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor Tetsuo Endoh, Kousuke Tanaka, Yuto Norifusa (Tohoku Univ.) (2) 10:55 - 11:10 Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.) (3) 11:10 - 11:25 Current Transport Characteristics for Organic Nonvolatile Memories Woo-Sik Nam, Gon-Sub Lee, Sung-Ho Seo, Young-Hwan Oh, Jae-Gun Park (Hanyang Univ.) (4) 11:25 - 11:40 Observation of hexagonal nuclei in the melt-quenched Ge2Sb2Te5 thin films Min-Soo Youm (KIST) (5) 11:40 - 11:55 Microstructural and electrical characteristics of Ge1Te1 alloy Yong-Tae Kim (KIST) ---------------------------------------- Thu, Jul 10 AM Session 4B: Emerging Devices II (09:00 - 10:15) ---------------------------------------- (1) 09:00 - 09:15 Single-Electron-Resolution Electrometer Based on Field-Effect Transistor Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Hiroshi Yamaguchi (NTT) (2) 09:15 - 09:30 Charge Injection Path of Bottom-Contact Organic Thin-Film Transistors Yoo Chul Kim, Keum-Dong Jung, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.) (3) 09:30 - 09:45 Self-Aligned Conducting Polymer Patterns Coated with Carbon Nanotube Using Soft Lithography for Transparent Flexible Electrode of OTFT Jin-Woo Huh, Jin-Woo Huh, Jin-Wook Jeong, Ho-Gyu Yoon (Korea Univ.), Sang Ho Kim (LG Chem.), Byeong-Kwon Ju (Korea Univ.) (4) 09:45 - 10:00 Self-Assembled Carbon Nanotube Network Films Field Effect Transistor for Biosensor Application Sunhaera Shin, Youn-Kyoung Baek, Yang-Kyu Choi, Hee-Tae Jung (KAIST) (5) 10:00 - 10:15 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implemention of Nanoprocessor on GaAs Nanowire Network Hong-Quan Zhao (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ./JST), Tamotsu Hashizume (Hokkaido Univ.) ----- Break ( 10 min. ) ----- ---------------------------------------- Thu, Jul 10 AM Session 5B: Emerging Devices III (10:25 - 11:55) ---------------------------------------- (1) 10:25 - 10:40 Fabrication of Silicon Nanowire Devices using AC Dielectrophoresis Su-Heon Hong, Myung-Gil Kang (Korea Univ.), Dong-Mok Whang (Sungkyunkwan Univ.), Sung-Woo Hwang (Korea Univ.) (2) 10:40 - 10:55 A Study on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) (PEDOT:PSS) Films for The Microbolometer Applications Hyeok Jun Son, Il Woong Kwon (KAIST), Ho Jun You (ETRI), Yong Soo Lee, Hee Chul Lee (KAIST) (3) 10:55 - 11:10 Electrical Detection of Si-Tagged Proteins on HF-last Si(100) and Thermally Grown SiO2 Surfaces S. Mahboob, Katsunori Makihara, Hirotaka Kaku, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki, Akio Kuroda (Hiroshima Univ.) (4) 11:10 - 11:25 Fabrication of methanol concentration sensor by using Pt dot catalyst electrode Seong-Il Kim (KIST) (5) 11:25 - 11:40 Fabrication and characterization of silicon nanowire-based biosensor Young-Soo Sohn (KIST) (6) 11:40 - 11:55 An Insect Vision-based Single-electron Circuit Performing Motion Detection Andrew Kilinga Kikombo, Tetsuya Asai, Yoshihito Amemiya (Hokkaido univ.) ---------------------------------------- Fri, Jul 11 AM Session 6: Power and High-Frequency Devices I (09:00 - 10:40) ---------------------------------------- (1) 09:00 - 09:25 [Invited Talk] SiC Power Transistor and Its Application for DC/DC Converter Makoto Kitabatake (Matsushita Electric Industrial) (2) 09:25 - 09:50 [Invited Talk] Recent Advances on GaN Vertical Power Device Tetsu Kachi (Toyota Central R&D Labs., Inc.) (3) 09:50 - 10:15 [Invited Talk] Millimeter-wave MMIC Technologies for F-band Application Toshihiko Kosugi, Akihiko Hirata, Koichi Murata, Naoya Kukutsu, Yuichi Kado, Takatomo Enoki (NTT) (4) 10:15 - 10:40 [Invited Talk] Emission of Terahertz Radiation from InGaP/InGaAs/GaAs Grating-Bicoupled Plasmon-Resonant Nano-Transistors Taiichi Otsuji (Tohoku Univ.) ----- Break ( 10 min. ) ----- ---------------------------------------- Fri, Jul 11 AM Session 7A: Power and High-Frequency Devices II (10:50 - 12:35) ---------------------------------------- (1) 10:50 - 11:05 High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) (2) 11:05 - 11:20 Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET Chien-Nan Liao (National Central Univ.), Jhih-Chao Huang, Feng-Tso Chien (Feng Chia Univ.), Chii-Wen Chen (Minghsin Univ. of Sci. and Tech.), Yao-Tsung Tsai (National Central Univ.) (3) 11:20 - 11:35 The Analysis of the Floating Field Limiting Ring and Field Plate Chien-Nan Liao (National Central Univ.), Jhih-Chao Huang, Feng-Tso Chien, Ching-Hwa Cheng (Feng Chia Univ.), Yao-Tsung Tsai (National Central Univ.) (4) 11:35 - 11:50 A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology Jae-Young Park, Jong-Kyu Song, Chang-Soo Jang, Joon-Tae Jang, San-Hong Kim, Sung-Ki Kim, Taek-Soo Kim (Dongbu HiTek) (5) 11:50 - 12:05 Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter HyunChul Kang, Takuya Nishimura, Taiichi Otsuji (Tohoku Univ.), Naoya Watanabe, Tanemasa Asano (Kyushu Univ.) (6) 12:05 - 12:20 Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter Takuya Nishimura, Nobuhiro Magome, HyunChul Kang, Taiichi Otsuji (Tohoku Univ.) (7) 12:20 - 12:35 Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications Sooyeon Kim, Yongho Oh, Jae-Sung Rieh (Korea Univ.) ----- Lunch ( 60 min. ) ----- ---------------------------------------- Fri, Jul 11 AM Session 7B: Si Devices III (10:50 - 12:35) ---------------------------------------- (1) 10:50 - 11:05 Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop Tetsuo Endoh, Masashi Kamiyanagi (Tohoku Univ.) (2) 11:05 - 11:20 Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations Masashi Kamiyanagi, Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.) (3) 11:20 - 11:35 Implementation of Channel Thermal Noise Model in CMOS RFIC Design Jongwook Jeon, Ickhyun Song, Hyungcheol Shin (Seoul National Univ.) (4) 11:35 - 11:50 CMOS Digitally Controlled Programmable Gain Amplifier (PGA) with DC Offset Cancellation Kyunghoon Kim, Jinwook Burn (Sogang Univ.) (5) 11:50 - 12:05 Chip Design of a Successive Approximation A/D Converter for Structure Monitoring System Jae-Woon Kim, Jinwook Burm (Sogang Univ.) (6) 12:05 - 12:20 Chip Design of Structure Monitoring Sensor Driving IC for Telemetrics Application Jun-Gyu Lee, Bae-Ki Jung, Jinwook Burm (Sogang Univ.) (7) 12:20 - 12:35 The Data Analysis Technique of the Atomic Force Microscopy for the Atomically Flat Silicon Surface Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Tadahiro Ohmi (Tohoku Univ.) ----- Lunch ( 60 min. ) ----- ---------------------------------------- Fri, Jul 11 PM Session 8A: Si Devices IV (13:35 - 15:05) ---------------------------------------- (1) 13:35 - 13:50 Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4 Hirotaka Kaku, Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) (2) 13:50 - 14:05 Study on Gate Around Transistor (GAT) Layout for Radiation Hardness Min-su Lee, Young-Soo Lee, Chul-Bum Kim, Young-Ho Kim (KAIST), Byoung-Gon Yu, Hee Chul Lee (ETRI) (3) 14:05 - 14:20 Low Power Pixel-Level ADC for a Micro-Bolometer Dong-Heon Ha, Chi Ho Hwang (KAIST), Woo Seok Yang (ETRI), Yong Soo Lee, Hee Chul Lee (KAIST) (4) 14:20 - 14:35 A 425 MHz Narrow Channel Spacing Frequency Synthesizer Younwoong Chung, Junan Lee, Jinwook Burm (Sogang Univ) (5) 14:35 - 14:50 A Novel 800mV Reference Current Source Circuit for Low-Power Low-Voltge Mixed-Mode Systems Oh Jun Kwon, Kae DalKwack (Hanyang Univ.) (6) 14:50 - 15:05 A Novel 900mV Single-Stage Class-AB Amplifier for a Σ-Δ Modulator with the Switched-OPamp Technique Oh Jun Kwon, Kae Dal Kwack (Hanyang Univ.) ---------------------------------------- Fri, Jul 11 PM Session 9A: High-Frequency, Photonic and Sensing Devices (15:05 - 16:05) ---------------------------------------- (1) 15:05 - 15:20 24 GHz Low Noise Amplifier Design in 65 nm CMOS Technology with Inter-Stage Matching Optimization Ickhyun Song, Hakchul Jung, Hee-Sauk Jhon, Minsuk Koo, Hyungcheol Shin (Seoul National Univ.) (2) 15:20 - 15:35 Reduced Branch-Line Coupler Using Eight Two-Step Stubs for W-Band Application of MMIC Tae-Jong Baek, Sang-Jin Lee, Min Han, Jin-Koo Rhee (Dongguk Univ.) (3) 15:35 - 15:50 Design Consideration of High Power LED Arrays for Backlight Unit Applications Bong-Ryeol Park, Ho-Young Cha (Hongik Univ.) (4) 15:50 - 16:05 Electrochemical Formation and Functionalization of InP Porous Nanostructures and Their Application to Chemical Sensors Akinori Mizohata, Naoki Yoshizawa, Taketomo Sato, Tamotsu Hashizume (Hokkaido Univ.) ---------------------------------------- Fri, Jul 11 PM Session 8B: Compound Semiconductor Device Process Technology (13:35 - 15:50) ---------------------------------------- (1) 13:35 - 13:50 W-band Single Balanced Mixer using High Performance Dot Schottky Diode Sang-Jin Lee, Jung-Hun Oh, Tae-Jong Baek, Mun-Kyo Lee, Dong-Sic Ko, Du-Hyun Ko, Hyun-Chang Park, Jin-Koo Rhee (Dongguk Univ.) (2) 13:50 - 14:05 SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application Jae-Kwon Kim, Kyunghwan Kim, Jinwook Burn (Sogang Univ.) (3) 14:05 - 14:20 Heat Dissipation and the Nature of Negative-Differential-Resistance for GaAs Gunn Diodes M. R. Kim, S. D. Lee, J. S. Lee, N. S. Kwak, S. D. Kim, J. K. Rhee (Dongguk Univ.), W. J. Kim (ADD) (4) 14:20 - 14:35 AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire Tomohiro Murata, Masayuki Kuroda (Matsushita Electric Industrial), Shuichi Nagai (Panasonic Boston Lab.), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita Electric Industrial), Ming Li (Panasonic Boston Lab.) (5) 14:35 - 14:50 Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures Hironari Chikaoka, Youichi Takakuwa, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) (6) 14:50 - 15:05 AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry) (7) 15:05 - 15:20 Characterization of GaN Surfaces After High-Temperature Annealing and Carbon Diffusion Takeshi Kimura, Tamotsu Hashizume (Hokkaido Univ.) (8) 15:20 - 15:35 Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching Takayuki Sawada, Yuta Kaizuka, Kensuke Takahashi, Kazuaki Imai (Hokkaido Inst. of Tech.) (9) 15:35 - 15:50 Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition Masashi Kato, Hidenori Ono, Kazuya Ogawa, Masaya Ichimura (Nagoya Inst. of Tech.) # Information for speakers Keynote Address will have 35 minutes for presentation and 5 minutes for discussion. Invited Talk will have 20 minutes for presentation and 5 minutes for discussion. General Talk will have 10 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - Co-sponsored by The Institute of Electronics Engineers of Korea (IEEK) # CONFERENCE ANNOUNCEMENT: - In cooperation with IEEE Electron Devices Society (EDS) Japan Chapter, IEICE Electronics Society, Global COE Program of Center for Next-Generation Information Technology based on Knowledge Discovery and Knowledge Federation (Hokkaido University) === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Mon, Aug 4, 2008 - Tue, Aug 5, 2008: Sizuoka Univ. Hamamatsu Campus [Wed, May 21] Thu, Oct 23, 2008: Kyushu Institute of Technology [Sun, Aug 10], Topics: - # SECRETARY: Shinichiro Takatani（Hitachi） TEL: 049-278-1477、FAX: 049-278-1419 E-mail:        er   Koichi Murata（NTT) TEL：046-240-2871、FAX：046-270-2872 E-mail：   aecl  Hara Naoki （Fujitsu Lab.） TEL : 046-250-8242、FAX : 046-250-8168 E-mail :   o     Kunio Tsuda（Toshiba） TEL : 044-549-2142、FAX : 044-520-1501 E-mail :  o  ba=== Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Thu, Jul 17, 2008 - Fri, Jul 18, 2008: Kikai-Shinko-Kaikan Bldg. [Fri, May 16] Thu, Oct 9, 2008 - Fri, Oct 10, 2008: Tohoku Univ. [Fri, Aug 1], Topics: Process Science and Novel Process Technologies # SECRETARY: Shigeru KAWANAKA (Toshiba) TEL 045-776-5670, FAX 045-776-4104 ge   ba=== () === Last modified: 2008-06-25 22:18:33 |
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