Wed, Jan 14 PM
13:00 - 16:40 |
| (1) |
13:00-13:25 |
A development of multi-port switch for 60GHz multi-sector switched-beam antenna |
Shoichi Kitazawa, Amane Miura, Masataka Ohira, Susumu Ano, Masazumi Ueba (ATR) |
| (2) |
13:25-13:50 |
24-GHz 1-V Pseudo-Stacked Mixer |
Nobuhiro Shiramizu, Toru Masuda, Takahiro Nakamura, Katsuyoshi Washio (Hitachi, Ltd.) |
| (3) |
13:50-14:15 |
Millimeter-wave Discrete Harmonic Mixer using Flipchip Interconnect |
Kenji Kawakami, Takuya Suzuki, Ko Kanaya, Yoichi Kitamura, Morishige Hieda (Mitsubishi Electric Co.) |
| |
14:15-14:25 |
Break ( 10 min. ) |
| (4) |
14:25-14:50 |
design of broadband amplifier with consideration of output capacitance |
Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Moriyasu Miyazaki (Mitsubishi Electric Co.) |
| (5) |
14:50-15:15 |
V-band 8th Order Push-Push Oscillator |
Kengo Kawasaki, Takayuki Tanaka, Masayoshi Aikawa (Saga Univ.) |
| |
15:15-15:25 |
Break ( 10 min. ) |
| (6) |
15:25-15:50 |
GaN-based Natural Super Junction Diodes |
Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) |
| (7) |
15:50-16:15 |
Evaluation of reverse conduction GaN FET |
Osamu Machida, Nobuo Kaneko, Ryohei Baba, Michiyoshi Izawa, Shinichi Iwakami, Masataka Yanagihara, Hirokazu Goto, Akio Iwabuchi (Sanken Electric Co.) |
| (8) |
16:15-16:40 |
Application of High Voltage GaN-HEMT for Electrodelss Fluorescent Lamp Circuit |
Wataru Saito (Toshiba Corp.), Tomokazu Domon (Toshiba Business and Life Service), Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Masakazu Yamaguchi (Toshiba Corp.) |
Thu, Jan 15 AM
09:30 - 16:40 |
| (9) |
09:30-09:55 |
Analysis of Temperature Distribution of a Heated Material Placed in a Microwave Oven
-- Considering the Change of Electric Permittivity by Temperature Rise -- |
Masaki Karakawa, Shinya Watanabe, Osamu Hashimoto (Aoyama Gakuin Univ.) |
| (10) |
09:55-10:20 |
Improvement of the Stopband Characteristics of Banpass Filters Using Microstrip Composite Shunt Resonators |
Takanori Tozawa, Zhewang Ma (Saitama Univ.), Chun-Ping Chen (Kanagawa Univ, Japan), Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.) |
| (11) |
10:20-10:45 |
Analysis of A Microstrip Parallel-Coupled Dual-Mode Ring Resonator and Its Application to the Design of Filters |
Hideyuki Sasaki, Zhewang Ma (Saitama Univ.), Chun-Ping Chen (Kanagawa Univ, Japan.), Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.) |
| |
10:45-10:55 |
Break ( 10 min. ) |
| (12) |
10:55-11:20 |
Submillimeter Wave Nonreciprocal Propagation Characteristics of a Coupled Line Containing Solid-State Plasma Material |
Kei Maruyama, Tetsuo Obunai, Shinichi Yodokawa, Satoru Kousaka (Akita Univ.) |
| (13) |
11:20-11:45 |
Low Loss Coplanar Waveguide Structure on High-Resistivity Silicon Substrate |
Takehiko Makita, Isao Tamai, Shinichi Hoshi, Shohei Seki (Oki Electric Industry Co., Ltd.) |
| |
11:45-13:00 |
Break ( 75 min. ) |
| (14) |
13:00-13:25 |
A Study on HBT RF Power Detectors with Directional Couplers on a GaAs Substrate |
Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Nobuyuki Ogawa, Masatoshi Nakayama (Mitsubishi Electric Co.) |
| (15) |
13:25-13:50 |
Influence of Gate Structure on Parasitic Gate Delay in InGaAs-Channel HEMTs |
Kohei Horiike, Syunsuke Fukuda, Keisuke Akagawa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) |
| (16) |
13:50-14:15 |
Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor |
Takafumi Uesawa, Masayuki Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) |
| |
14:15-14:25 |
Break ( 10 min. ) |
| (17) |
14:25-14:50 |
Two-channel InP HBT Differential Automatic-gain-control Transimpedance Amplifier IC for 43-Gbit/s DQPSK Photoreceiver |
Hiroyuki Fukuyama, Toshihiro Itoh, Tomofumi Furuta, Kenji Kurishima, Masami Tokumitsu, Koichi Murata (NTT) |
| (18) |
14:50-15:15 |
High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits |
Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) |
| |
15:15-15:25 |
Break ( 10 min. ) |
| (19) |
15:25-15:50 |
Characteristics on Primary Radiator Fed by Coaxial Cable at 60GHz |
Makoto Okiyokota, Motonori Nakamura, Futoshi Kuroki (Inst. of National College of Tech.) |
| (20) |
15:50-16:15 |
Experimental Study on Bilaterally Metal-loaded Tri-plate Transmission Line at Millimeter-wavelengths |
Ryo-ji Tamaru, Futoshi Kuroki (Kure Nat'l Coll of Tech) |
| (21) |
16:15-16:40 |
A Report on the China-Japan Joint Microwave Conference 2008 |
Futoshi Kuroki (Kure Nat'l Coll of Tech) |
Fri, Jan 16 AM
09:30 - 12:10 |
| (22) |
09:30-09:55 |
C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency |
Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,) |
| (23) |
09:55-10:20 |
Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs |
Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.) |
| (24) |
10:20-10:45 |
AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators |
Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) |
| |
10:45-10:55 |
Break ( 10 min. ) |
| (25) |
10:55-11:20 |
High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications |
Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.) |
| (26) |
11:20-11:45 |
A High Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer |
Akihiro Ando, Yoichiro Takayama, Tsuyoshi Yoshida, Ryo Ishikawa, Kazuhiko Honjo (The Univ of Electro-Communications) |
| (27) |
11:45-12:10 |
Mesa-gate AlGaN/GaN HEMT having nano-width channels |
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) |
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