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Technical Committee on Microwaves (MW) [schedule] [select]
Chair Osamu Hashimoto (Aoyama Gakuin Univ.)
Vice Chair Takashi Ohira (Toyohashi Univ. of Tech.)
Secretary Masayoshi Nakayama (Mitsubishi Electric), Atsushi Sanada (Yamaguchi Univ.)
Assistant Yogen Cho (Ryukoku Univ.), Kei Sato (NTT DoCoMo)

Technical Committee on Electron Device (ED) [schedule] [select]
Chair Masaaki Kuzuhara (Univ. of Fukui)
Vice Chair Tamotsu Hashidume (Hokkaido Univ.)
Secretary Koichi Murata (NTT)
Assistant Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)

Conference Date Wed, Jan 14, 2009 13:00 - 16:40
Thu, Jan 15, 2009 09:30 - 16:40
Fri, Jan 16, 2009 09:30 - 12:10
Topics Compound Semiconductor ICs, High-speed and high-frequency devices 
Conference Place  
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Wed, Jan 14 PM 
13:00 - 16:40
(1) 13:00-13:25 A development of multi-port switch for 60GHz multi-sector switched-beam antenna Shoichi Kitazawa, Amane Miura, Masataka Ohira, Susumu Ano, Masazumi Ueba (ATR)
(2) 13:25-13:50 24-GHz 1-V Pseudo-Stacked Mixer ED2008-198 MW2008-163 Nobuhiro Shiramizu, Toru Masuda, Takahiro Nakamura, Katsuyoshi Washio (Hitachi, Ltd.)
(3) 13:50-14:15 Millimeter-wave Discrete Harmonic Mixer using Flipchip Interconnect ED2008-199 MW2008-164 Kenji Kawakami, Takuya Suzuki, Ko Kanaya, Yoichi Kitamura, Morishige Hieda (Mitsubishi Electric Co.)
  14:15-14:25 Break ( 10 min. )
(4) 14:25-14:50 design of broadband amplifier with consideration of output capacitance ED2008-200 MW2008-165 Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Moriyasu Miyazaki (Mitsubishi Electric Co.)
(5) 14:50-15:15 V-band 8th Order Push-Push Oscillator ED2008-201 MW2008-166 Kengo Kawasaki, Takayuki Tanaka, Masayoshi Aikawa (Saga Univ.)
  15:15-15:25 Break ( 10 min. )
(6) 15:25-15:50 GaN-based Natural Super Junction Diodes ED2008-202 MW2008-167 Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.)
(7) 15:50-16:15 Evaluation of reverse conduction GaN FET ED2008-203 MW2008-168 Osamu Machida, Nobuo Kaneko, Ryohei Baba, Michiyoshi Izawa, Shinichi Iwakami, Masataka Yanagihara, Hirokazu Goto, Akio Iwabuchi (Sanken Electric Co.)
(8) 16:15-16:40 Application of High Voltage GaN-HEMT for Electrodelss Fluorescent Lamp Circuit ED2008-204 MW2008-169 Wataru Saito (Toshiba Corp.), Tomokazu Domon (Toshiba Business and Life Service), Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Masakazu Yamaguchi (Toshiba Corp.)
Thu, Jan 15 AM 
09:30 - 16:40
(9) 09:30-09:55 Analysis of Temperature Distribution of a Heated Material Placed in a Microwave Oven
-- Considering the Change of Electric Permittivity by Temperature Rise --
ED2008-205 MW2008-170
Masaki Karakawa, Shinya Watanabe, Osamu Hashimoto (Aoyama Gakuin Univ.)
(10) 09:55-10:20 Improvement of the Stopband Characteristics of Banpass Filters Using Microstrip Composite Shunt Resonators ED2008-206 MW2008-171 Takanori Tozawa, Zhewang Ma (Saitama Univ.), Chun-Ping Chen (Kanagawa Univ, Japan), Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.)
(11) 10:20-10:45 Analysis of A Microstrip Parallel-Coupled Dual-Mode Ring Resonator and Its Application to the Design of Filters ED2008-207 MW2008-172 Hideyuki Sasaki, Zhewang Ma (Saitama Univ.), Chun-Ping Chen (Kanagawa Univ, Japan.), Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.)
  10:45-10:55 Break ( 10 min. )
(12) 10:55-11:20 Submillimeter Wave Nonreciprocal Propagation Characteristics of a Coupled Line Containing Solid-State Plasma Material ED2008-208 MW2008-173 Kei Maruyama, Tetsuo Obunai, Shinichi Yodokawa, Satoru Kousaka (Akita Univ.)
(13) 11:20-11:45 Low Loss Coplanar Waveguide Structure on High-Resistivity Silicon Substrate ED2008-209 MW2008-174 Takehiko Makita, Isao Tamai, Shinichi Hoshi, Shohei Seki (Oki Electric Industry Co., Ltd.)
  11:45-13:00 Break ( 75 min. )
(14) 13:00-13:25 A Study on HBT RF Power Detectors with Directional Couplers on a GaAs Substrate ED2008-210 MW2008-175 Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Nobuyuki Ogawa, Masatoshi Nakayama (Mitsubishi Electric Co.)
(15) 13:25-13:50 Influence of Gate Structure on Parasitic Gate Delay in InGaAs-Channel HEMTs ED2008-211 MW2008-176 Kohei Horiike, Syunsuke Fukuda, Keisuke Akagawa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.)
(16) 13:50-14:15 Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor ED2008-212 MW2008-177 Takafumi Uesawa, Masayuki Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.)
  14:15-14:25 Break ( 10 min. )
(17) 14:25-14:50 Two-channel InP HBT Differential Automatic-gain-control Transimpedance Amplifier IC for 43-Gbit/s DQPSK Photoreceiver ED2008-213 MW2008-178 Hiroyuki Fukuyama, Toshihiro Itoh, Tomofumi Furuta, Kenji Kurishima, Masami Tokumitsu, Koichi Murata (NTT)
(18) 14:50-15:15 High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits ED2008-214 MW2008-179 Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.)
  15:15-15:25 Break ( 10 min. )
(19) 15:25-15:50 Characteristics on Primary Radiator Fed by Coaxial Cable at 60GHz ED2008-215 MW2008-180 Makoto Okiyokota, Motonori Nakamura, Futoshi Kuroki (Inst. of National College of Tech.)
(20) 15:50-16:15 Experimental Study on Bilaterally Metal-loaded Tri-plate Transmission Line at Millimeter-wavelengths ED2008-216 MW2008-181 Ryo-ji Tamaru, Futoshi Kuroki (Kure Nat'l Coll of Tech)
(21) 16:15-16:40 A Report on the China-Japan Joint Microwave Conference 2008 ED2008-217 MW2008-182 Futoshi Kuroki (Kure Nat'l Coll of Tech)
Fri, Jan 16 AM 
09:30 - 12:10
(22) 09:30-09:55 C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency ED2008-218 MW2008-183 Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,)
(23) 09:55-10:20 Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs ED2008-219 MW2008-184 Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.)
(24) 10:20-10:45 AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators ED2008-220 MW2008-185 Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)
  10:45-10:55 Break ( 10 min. )
(25) 10:55-11:20 High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications ED2008-221 MW2008-186 Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.)
(26) 11:20-11:45 A High Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer ED2008-222 MW2008-187 Akihiro Ando, Yoichiro Takayama, Tsuyoshi Yoshida, Ryo Ishikawa, Kazuhiko Honjo (The Univ of Electro-Communications)
(27) 11:45-12:10 Mesa-gate AlGaN/GaN HEMT having nano-width channels ED2008-223 MW2008-188 Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
MW Technical Committee on Microwaves (MW)   [Latest Schedule]
Contact Address Yogen Cho (Ryukoku University)
TEL:077-543-7495, ext.:2495
FAX:077-543-7428
E--mail:zngnsr
or Masatoshi Nakayama (Mitsubishi Electric Corp.)
E--mail:NaMacbMibiElectc 
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Koichi Murata(NTT)
TEL:046-240-2871、FAX:046-270-2872
E--mailaecl
Hara Naoki (Fujitsu Lab.)
TEL : 046-250-8242、FAX : 046-250-8168
E--mail : o
Kunio Tsuda(Toshiba)
TEL : 044-549-2142、FAX : 044-520-1501
E--mail : oba 


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