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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Tetsu Kachi (Toyota Central R&D Labs.)
Vice Chair Naoki Hara (Fujitsu Labs.)
Secretary Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.)
Assistant Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tetsuro Endo (Tohoku Univ.)
Vice Chair Yasuo Nara (Fujitsu Semiconductor)
Secretary Yukinori Ono (NTT), Shintaro Nomura (Univ. of Tsukuba)
Assistant Yoshitaka Sasago (Hitachi)

Conference Date Tue, Feb 7, 2012 13:30 - 17:20
Wed, Feb 8, 2012 09:30 - 14:40
Topics  
Conference Place Centennial Memorial Hall, Hokkaido University 
Address North 8, West9, Sapporo-shi, 060-0808, Japan
Transportation Guide 10 min walk from JR Hokkaido Sapporo station
http://www.hokudai.ac.jp/en/documents/guide_english_2.pdf
Contact
Person
Dr. Seiya Kasai
+81-11-706-6509
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Tue, Feb 7 PM 
13:30 - 17:20
(1) 13:30-14:10 [Invited Talk]
Deterministic-doped Silicon Devices and Their Quantum Transport ED2011-142 SDM2011-159
Takahiro Shinada, Masahiro Hori (Waseda Univ.), Filipo Guagliardo (Politecnico di Milano), Yukinori Ono (NTT), Kuninori Kumagai, Takashi Tanii (Waseda Univ.), Enrico Prati (CNR)
(2) 14:10-14:35 Ab initio Analysis of Electronic States for Single Phosphorus Dopants in Silicon Nanorod Transistors ED2011-143 SDM2011-160 Youhei Kuzuya, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.), Hiroshi Mizuta (JAIST/Univ. of Southampton)
(3) 14:35-15:00 KFM observation of individual dopant potentials and electron charging ED2011-144 SDM2011-161 Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.)
  15:00-15:15 Break ( 15 min. )
(4) 15:15-15:40 High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation ED2011-145 SDM2011-162 Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.)
(5) 15:40-16:05 High-frequency characterization of InAs nanowire MISFETs ED2011-146 SDM2011-163 Tatsuro Watanabe, Yutaka Otsuhata, Takao Waho (Sophia Univ.), Kai Blekker, Werner Prost, Franz-Josef Tegude (Univ. of Duisburg-Essen)
(6) 16:05-16:30 Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs ED2011-147 SDM2011-164 Jie Pan, Kazuki Hayano, Masayuki Mori, Koichi Maezawa (Univ. Toyama)
(7) 16:30-16:55 Gain enhancement in graphene terahertz amplifier with resonant structure ED2011-148 SDM2011-165 Yuya Takatsuka, Kazuhiro Takahagi, Eiichi Sano (Hokkaido Univ.), Victor Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.)
(8) 16:55-17:20 Light emission from Silicon quantum-well by tunneling current injection ED2011-149 SDM2011-166 Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Akira Fujiwara (NTT BRL)
Wed, Feb 8 AM 
09:30 - 14:40
(9) 09:30-09:55 Observation of Conductance Quantization during SPM Scratching ED2011-150 SDM2011-167 Ryutaro Suda, Takahiro Ohyama, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech)
(10) 09:55-10:20 Simultaneous Control of Series-Connected Nanogaps by Field-Emission-Induced Electromigration ED2011-151 SDM2011-168 Mitsuki Ito, Shunsuke Akimoto, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.)
(11) 10:20-10:45 Electrical characteristics of MgF_(2)/Fe/MgF_(2) thin films ED2011-152 SDM2011-169 Takuma Ishikawa, Eita Sato, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.)
  10:45-11:00 Break ( 15 min. )
(12) 11:00-11:25 Seebeck Coefficient of Ultrathin Si with Fermi Energy Controlled by External Bias ED2011-153 SDM2011-170 Faiz Salleh, Kazutoshi Miwa, Hiroya Ikeda (Shizuoka Univ.)
(13) 11:25-11:50 Stochastic resonance using a steep-subthreshold-swing transistor ED2011-154 SDM2011-171 Katsuhiko Nishiguchi, Akira Fujiwara (NTT)
  11:50-13:00 Lunch Break ( 70 min. )
(14) 13:00-13:25 The Luttinger-liquid behavior in single-walled carbon nanotube networks ED2011-155 SDM2011-172 Tomo Tanaka, Ken-ichiro Mori, Eiichi Sano, Bunshi Fugetsu, Hongwen Yu (Hokkaido Univ.)
(15) 13:25-13:50 Charge distribution near interface of high-k gate insulator in CNFETs ED2011-156 SDM2011-173 Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)
(16) 13:50-14:15 Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs ED2011-157 SDM2011-174 Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.)
(17) 14:15-14:40 Study on nonlinear transfer characteristics in a GaAs three-branch nanowire junction device using a light-induced local conductance modulation method ED2011-158 SDM2011-175 Masaki Sato, Toru Muramatsu, Seiya Kasai (Hokkaido Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 35 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Kunio Tsuda(Toshiba)
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E--mail : oba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E--mail : t
Tetsuzo Ueda(Panasonic)
TEL:+81-75-956-8273、FAX:+81-75-956-9110
E--mailzopac
Seiya Kasai(Hokkaido Univ.)
TEL:+81-11-706-6509、FAX:+81-11-716-6004
E--mailirciqei 
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E--mail: o 


Last modified: 2011-11-18 16:39:33


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