|
Chair |
|
Tetsuro Endo (Tohoku Univ.) |
Vice Chair |
|
Yasuo Nara (Fujitsu Microelectronics) |
Secretary |
|
Yukinori Ono (NTT), Katsunori Onishi (Kyushu Inst. of Tech.) |
Assistant |
|
Shintaro Nomura (Univ. of Tsukuba) |
|
Conference Date |
Mon, Feb 7, 2011 10:00 - 17:00 |
Topics |
|
Conference Place |
|
Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
|
Mon, Feb 7 AM 10:00 - 17:00 |
|
10:00-10:05 |
Opening Addres ( 5 min. ) |
(1) |
10:05-10:50 |
[Keynote Address]
Technical Challenges for 3D Packaging and Chip Package Interaction |
Yasumitsu Orii, Kazushige Toriyama, Akihiro Horibe, Keiji Matsumoto, Katsuyuki Sakumai (IBM Japan) |
(2) |
10:50-11:20 |
Path-finding for Integration of Robust Low-k (k-2.5) SiOCH in System LSI |
Naoya Inoue, Makoto Ueki, Hironori Yamamoto, Ippei Kume, Jun Kawahara, Manabu Iguchi, Hirokazu Honda, Yoshitaka Horikoshi, Yoshihiro Hayashi (Renesas Electronics Corp.) |
(3) |
11:20-11:50 |
Application of Compliant Bump Technology to Image Sensor |
Naoya Watanabe, Tanemasa Asano (Kyushu Univ.) |
|
11:50-12:40 |
Lunch Break ( 50 min. ) |
(4) |
12:40-13:10 |
A highly reliable Cu interconnect with CuSiN and Ti-based barrier metal: Impact of oxgen surface treatment |
Yumi Hayashi, Noriaki Matsunaga, Makoto Wada, Shinichi Nakao, Kei Watanabe, Satoshi Kato, Atsuko Sakata, Akihiro Kajita, Hideki Shibata (Toshiba Corp.) |
(5) |
13:10-13:40 |
Networked nanographite growth using photoemission-assisted enhanced plasma CVD: discharge condition dependence of the crystallographic quality |
Shuichi Ogawa (Tohoku Univ./JST), Motonobu Sato (Fujitsu/JST), Haruki Sumi (Tohoku Univ.), Mizuhisa Nihei (Fujitsu/JST), Yuji Takakuwa (Tohoku Univ./JST) |
(6) |
13:40-14:10 |
Dependence of Ti-Based Self-Formed Barrier Structure on Dielectric-Layer Composition |
Kazuyuki Kohama, Kazuhiro Ito, Yutaka Sonobayashi (Kyoto Univ.), Kazuyuki Ohmori, Kenichi Mori, Kazuyoshi Maekawa (Renesas), Yasuharu Shirai (Kyoto Univ.), Masanori Murakami (The Ritsumeikan) |
(7) |
14:10-14:40 |
Networked-Nanographite Wire Grown by Metal-Photoemission-assisted Plasma-enhanced CVD without Catalysts |
Motonobu Sato (Fujitsu Ltd./JST/AIST), Shuichi Ogawa (Tohoku Univ./JST), Eiji Ikenaga (JASRI/JST), Yuji Takakuwa (Tohoku Univ./JST), Mizuhisa Nihei (Fujitsu Ltd./JST/AIST), Naoki Yokoyama (AIST) |
|
14:40-14:55 |
Break ( 15 min. ) |
(8) |
14:55-15:25 |
Stress Mapping in Thinned Si Wafer with Cu-TSV and Cu-Sn Microbumps |
Murugesan Mariappan, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (Tohoku Univ.) |
(9) |
15:25-15:55 |
Development of Low Temperature Bump-less TSV Process in 3D Stacking Technology |
Hideki Kitada, Nobuhide Maeda (The Univ. of Tokyo), Koji Fujimoto (Dai Nippon Printing), Yoriko Mizushima, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Laboratories Ltd.), Takayuki Ohba (The Univ. of Tokyo) |
(10) |
15:55-16:25 |
Highly hermetic barrier Low-k SiC (k<3.5) by using new precursor |
Tatsuya Usami, Chikako Kobayashi, Yukio Miura (Renesas), Shuji Nagano (Taiyo-Nippon Sanso), Koichi Ohto (Renesas), Hideharu Shimizu (Taiyo-Nippon Sanso), Takeshi Kada, Tatsuya Ohira (Tri Chemical Lab. Inc.), Kunihiro Fujii (Renesas) |
(11) |
16:25-16:55 |
Highly Manufacturable ELK Integration Technology with Metal Hard Mask Process for High Performance 32nm-node Interconnect and Beyond |
S. Matsumoto, T. Harada, Y. Morinaga, D. Inagaki, J. Shibata, K. Tashiro, T. Kabe, Akihisa Iwasaki, S. Hirao, M. Tsutsue, K. Nomura, K. Seo, T. Hinomura, Naoki Torazawa, S. Suzuki (Panasonic) |
|
16:55-17:00 |
Closing Address ( 5 min. ) |
Announcement for Speakers |
General Talk | Each speech will have 20 minutes for presentation and 10 minutes for discussion. |
Contact Address and Latest Schedule Information |
SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
Contact Address |
Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E-: Hisahiro.Ansai@jp.sony.com |
Last modified: 2010-12-15 13:12:38
|