Thu, Nov 5 AM
10:00 - 11:50 |
| (1) |
10:00-10:50 |
[Invited Talk]
Current Status of Impurity Diffusion Modeling in Semiconductors |
Masashi Uematsu (Keio Univ.) |
| |
10:50-11:00 |
Break ( 10 min. ) |
| (2) |
11:00-11:25 |
Impact of Deep P-Well Structure on Single Event Latchup in Bulk CMOS |
Takashi Kato, Hideya Matsuyama (SNI) |
| (3) |
11:25-11:50 |
Analysis of Ultra-High-Speed Image Sensor with Monte Carlo Simulation |
Natsumi Minamitani (Osaka Univ.), Vu Truon Son Dao, Kazuhiro Shimonomura, Takeharu Goji Etoh (Ritsumeikan Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.) |
| |
11:50-13:30 |
Lunch Break ( 100 min. ) |
Thu, Nov 5 PM
13:30 - 15:20 |
| (4) |
13:30-14:20 |
[Invited Talk]
SISPAD 2015 Review |
Hideki Minari (Sony) |
| |
14:20-14:30 |
Break ( 10 min. ) |
| (5) |
14:30-15:20 |
[Invited Talk]
Review of SISPAD2015 |
Tatsuya Kunikiyo (Renesas) |
Fri, Nov 6 AM
11:00 - 11:50 |
| (6) |
11:00-11:50 |
[Invited Talk]
Simulation of Dirac Electron Engineering Device Using Strained Graphene |
Satofumi Souma, Miku Tanaka, Keisuke Ichihara, Shotaro Sakoda, Kenji Sasaoka, Matsuto Ogawa (Kobe Univ.) |
| |
11:50-13:30 |
Luch Break ( 100 min. ) |
Fri, Nov 6 PM
13:30 - 15:20 |
| (7) |
13:30-14:20 |
[Invited Talk]
GaN-based devices on Si substrates for power conversion systems |
Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic) |
| |
14:20-14:30 |
Break ( 10 min. ) |
| (8) |
14:30-15:20 |
[Invited Talk]
Impacts of the 4H-SiC/SiO2 Interface States on the Switching Operation of Power MOSFETs |
Atsushi Sakai, Katsumi Eikyu, Kenichiro Sonoda (REL), Kenichi Hisada, Koichi Arai, Yoichi Yamamoto (RSMC), Motoaki Tanizawa, Yasuo Yamaguchi (REL) |
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