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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yuzou Oono (Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo (Renesas)
Secretary Rihito Kuroda (Tohoku Univ.)
Assistant Tadashi Yamaguchi (Renesas)

Conference Date Fri, Jan 22, 2016 10:00 - 17:15
Topics Interconnects, Package and related materials 
Conference Place  
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
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Fri, Jan 22 AM 
10:00 - 17:15
  10:00-10:05 Opening Address ( 5 min. )
(1) 10:05-10:40 [Invited Talk]
Reliability Results of 4 million Micro Bump Interconnections of 3D Stacked 16 M Pixel Image Sensor SDM2015-108
Yoshiaki Takemoto, Naohiro Takazawa, Mitsuhiro Tsukimura, Haruhisa Saito, Toru Kondo, Hideki Kato, Jun Aoki, Kenji Kobayashi, Shunsuke Suzuki, Yuichi Gomi, Seisuke Matsuda, Yoshitaka Tadaki (Olympus)
(2) 10:40-11:15 [Invited Talk]
Re-think Stress migration phenomenon with Stress measurement in 12years SDM2015-109
Hideya Matsuyama (Socionext), Takashi Suzuki, Tomoji Nakamura (FJ Lab), Motoki Shiozu, Hideo Ehara (MIFS)
(3) 11:15-11:35 Copper Thin Film Growth using Cu(I) Amidinate Precursor in Supercritical Carbon Dioxide SDM2015-110 Md Rasadujjaman, Mitsuhiro Watanabe (Univ. Yamanashi), Hiroshi Sudoh, Hideaki Machida (Gas phase growth), Eiichi Kondoh (Univ. Yamanashi)
(4) 11:35-11:55 In-situ ellipsometry of Cu surfaces immersed in BTA-H2O2 solutions SDM2015-111 Tatsuya Kawakami, Eiichi Kondoh, Mitsuhiro Watanabe (University of Yamanashi), Satomi Hamada, Shohei Shima, Hirokuni Hiyama (Ebara Corporation)
  11:55-13:00 Lunch Break ( 65 min. )
(5) 13:00-13:35 [Invited Talk]
characterization of nitride thin film deposited at low temperatures SDM2015-112
Mayumi B. Takeyama, Masaru Sato (Kitami inst.), Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Lab.), Atsushi Noya (Kitami inst.)
(6) 13:35-13:55 Characteristic of TiNx film by low temperature deposition using radical treatment SDM2015-113 Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami inst. of Technol.)
(7) 13:55-14:15 Fabrication of highly reliable Co(W) thin film by physical vapor deposition for next generation ULSI Cu interconnects SDM2015-114 Taewoong Kim, Kouta Tomita, Takeshi Momose (Univ. of Tokyo), Takaaki Tsunoda, Takayuki Moriwaki (CANON ANELVA), Yukihiro Shimogaki (Univ. of Tokyo)
(8) 14:15-14:35 Fabrication of Multilayer Graphene by Solid-Phase Precipitation with Current Stress SDM2015-115 MD Sahab Uddin, Hiroyasu Ichikawa, Shota Sano (SIT), Kazuyoshi Ueno (SIT/RCGI)
(9) 14:35-15:10 [Invited Talk]
Effect of Wafer Thinning on DRAM Characteristics for Bumpless Interconnects and WOW Applications SDM2015-116
Y. S. Kim, S. Kodama, Y. Mizushima, T. Nakamura, N. Maeda, K. Fujimoto (Tokodai), A. Kawai (DISCO), T. Ohba (Tokodai)
  15:10-15:25 Break ( 15 min. )
(10) 15:25-16:00 [Invited Talk]
Novel reconfigured wafer-to-wafer(W2W) hybrid bonding technology using ultra-high density nano-Cu filaments for exascale 2.5D/3D integration SDM2015-117
Kangwook Lee, Taksfumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (Tohoku Univ.)
(11) 16:00-16:35 [Invited Talk]
Packaging Material for 2.5D/3D TSV Integration SDM2015-118
Kazuyuki Mitsukura, Tatsuya Makino, Keiichi Hatakeyama (Hitachi Chemical), Kenneth June Rebibis, Andy Miller, Eric Beyne (IMEC)
(12) 16:35-17:10 [Invited Talk]
TSV Process Technology by Printing
-- Application of Nano-Function Materials --
SDM2015-119
Hiroaki Ikeda, Shigenobu Sekine, Ryuji Kimura, koichi Shimokawa, keiji Okada, Hiroaki Shindo, Tatsuya Ooi, Rei Tamaki (Napra), Makoto Nagata (Kobe-Univ.)
  17:10-17:15 Closing Address ( 5 min. )

Announcement for Speakers
General TalkEach speech will have 15 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 25 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E--mail: e3 


Last modified: 2015-12-25 17:09:44


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