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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Koichi Maezawa (Univ. of Toyama)
Vice Chair Kunio Tsuda (Toshiba)
Secretary Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)
Assistant Manabu Arai (New JRC), Masataka Higashiwaki (NICT)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yuzou Oono (Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo (Renesas)
Secretary Rihito Kuroda (Tohoku Univ.)
Assistant Tadashi Yamaguchi (Renesas)

Conference Date Thu, Mar 3, 2016 14:00 - 17:10
Fri, Mar 4, 2016 10:00 - 11:40
Topics Functional Nanodevices and Related Technologies 
Conference Place Centennial Hall, Hokkaido University 
Address in Hokkaido Univ. Campus, North 9, West 6, Sapporo 060-0809, Japan
Transportation Guide 7 min walk from JR Sapporo Station
http://www.oia.hokudai.ac.jp/about/facilities/event-and-seminar-spaces/centennial-hall/
Contact
Person
Prof. Seiya Kasai
+81-11-706-7171
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
Announcement Please join the reception held after the session in the first day. Participation fee is approximately 5000 JPN.

Thu, Mar 3 PM 
14:00 - 17:10
(1) 14:00-14:50 [Invited Talk]
A Recent Development in Thin-Film Device Applications using Oxide Semiconductors
Toshihiko Maemoto, Yi Sun, Souhei Matsuda, Shota Sasaki, Kouhei Ashida, Oliver Kaltstein, Masatoshi Koyama, Kazuto Koike, Mitsuaki Yano, Shigehiko Sasa (Osaka Inst. Tech.)
(2) 14:50-15:15 Evaluation of wearable thermoelectric power generators by Sb-/Ag- doped ZnO nanocomposites and their properties Veluswamy Pandiyarasan, Jayaram Archana, Mani Navaneethan (Shizuoka Univ.), Salleh Faiz (Univ. Malaya), Yasuhiro Hayakawa, Hiroya Ikeda (Shizuoka Univ.)
(3) 15:15-15:40 Formation of fluorine-doped tin oxide nanostructures by using spray pyrolysis deposition technique Kenji Murakami, Ajith Bandara, Masayuki Okuya, Masaru Shimomura (Shizuoka Univ.), R.m.g. Rajapakse (Univ. Peradeniya)
  15:40-15:55 Break ( 15 min. )
(4) 15:55-16:20 Growth and thermoelectric properties of compositionally homogeneous SiGe for nanowire thermopile infrared photodetector Hiroya Ikeda, Muthusamy Omprakash, Yasuhiro Hayakawa (Shizuoka Univ.)
(5) 16:20-16:45 Low-temperature charge pumping for SiO2/Si interface states Tokinobu Watanabe, Masahiro Hori, Yukinori Ono (Univ. of Toyama)
(6) 16:45-17:10 Nonlinear voltage transfer characteristics of a graphene three-branch nano-junction device and its control Xiang Yin (Hokkaido Univ.), Polin Liu, Hirofumi Tanaka (Kyushu Inst. of Tech.), Toshihiko Maemoto (Osaka Inst. of Tech.), Seiya Kasai (Hokkaido Univ.)
Fri, Mar 4 AM 
10:00 - 11:40
(7) 10:00-10:25 Large scale characterization of carbon nanotube thin-film transistors on plastic film Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.)
(8) 10:25-10:50 Study of unique information-processing on pulse signal generating and propagating medium Fumio Maehara, Takahide Oya (Yokohama National Univ.)
(9) 10:50-11:15 Analog-to-digital converter using amoeba-inspired neural network Uichi Ishida, Takao Waho (Sophia Univ.)
(10) 11:15-11:40 Delta Sigma Modulation Microphone Sensors Using a HEMT and a Cavity Resonator Takahiro Yamaoka, Shunya Fujino, Ryo Yamagishi, Masaki Yamakawa, Tomoki Shimada, Masayuki Mori, Koichi Maezawa (Univ. Toyama)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 45 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Koji Matsunaga(NEC)
TEL:+81-44-435-8348 FAX:+81-44-455-8253
E--mail: k-fpc
Toshikazu Suzuki (JAIST)
TEL : +81-761-51-1441 Fax : +81-761-51-1455
E--mail : sijaist 
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E--mail: e3 


Last modified: 2015-12-23 14:34:05


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