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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Takahiro Shinada (Tohoku Univ.) Vice Chair: Hiroshige Hirano (TowerJazz Panasonic) Secretary: Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY) Assistant: Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.) DATE: Wed, Oct 23, 2019 13:30 - 17:10 Thu, Oct 24, 2019 09:30 - 16:40 PLACE: Fluctuation FreeFacility、Niche, Tohoku University(6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan. http://www.fff.niche.tohoku.ac.jp/index_e.html) TOPICS: Process Science and New Process Technology ---------------------------------------- Wed, Oct 23 PM (13:30 - 17:10) ---------------------------------------- (1) 13:30 - 14:20 [Invited Talk] Atomic layer etching process utilizing plasma Sho Kumakura, Yoshihide Kihara, Masanobu Honda (Tokyo Electron Miyagi) (2) 14:20 - 14:50 A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) (3) 14:50 - 15:20 The investigation of interface property of N-doped LaB6/SiO2/Si(100) stack structure by increasing deposition temperature Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi (Tokyo Tech) ----- Break ( 20 min. ) ----- (4) 15:40 - 16:10 Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) (5) 16:10 - 16:40 A study on the EOT scaling of the Hf-based MONOS non-volatile memory characteristics utilizing HfON tunneling layer Jooyoung Pyo, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) (6) 16:40 - 17:10 Investigation of the multi-level operation of Hf-based MONOS nonvolatile memory utilizing multi charge trapping layers Yusuke Horiuchi, Jooyoung Pyo, Shun-ichiro Ohmi (Tokyo Tech.) ---------------------------------------- Thu, Oct 24 AM (09:30 - 16:40) ---------------------------------------- (7) 09:30 - 10:20 [Invited Talk] NiAl as Cu alternative for ultrasmall feature sizes Linghan Chen, Junichi Koike, Daisuke Ando, Yuji Sutou (Tohoku Univ.) (8) 10:20 - 10:50 [Invited Lecture] Effect of an oxide layer at Co/Si interface on Schottky barrier height and contact resistivity Koichi Kido, Ken Sato, Rihito Kuroda, Daisuke Ando, Yuji Suto, Junichi Koike (Tohoku Univ.) (9) 10:50 - 11:20 Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications Rengie Mark D. Mailig, Yuichiro Aruga, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) ----- Lunch Break ( 100 min. ) ----- (10) 13:00 - 13:50 [Invited Talk] Random nanostructure formation and electric readout for nano-artifact metrics Seiya Kasai, Renpeng Lu, Katsumi Shimizu, Xiang Yin (Hokkaido Univ.), Yosuke Ueba, Mikio Ishikawa, Mitsuru Kitamura (DNP), Morihisa Hoga (AIST), Makoto Naruse (Univ. of Tokyo), Tsutomu Matsumoto (YNU) (11) 13:50 - 14:20 The process technology of new piezoelectric materials BiFeO3 and dependence of substrate Fuminobu Imaizumi, Rikuto Nakada (NIT, Oyama College) (12) 14:20 - 14:50 (See Japanese page.) ----- Break ( 20 min. ) ----- (13) 15:10 - 15:40 Resistance Measurement Platform for Statistical Evaluation of Emerging Memory Materials with High Accuracy Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) (14) 15:40 - 16:10 Gas concentration distribution measurement in semiconductor process chamber using a high SNR CMOS absorption image sensor Keigo Takahashi, Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Yasuyuki Fujihara, Maasa Murata, Hidekazu Ishii, Tatsuo Morimoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) (15) 16:10 - 16:40 Observation of Fluctuation of Magnetron Sputtering Plasmas Using High-speed Video Camera Shintaro Yamazaki, Tetsuya Goto, Manabu Suzuki, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) # Information for speakers General Talk will have 25 minutes for presentation and 5 minutes for discussion. Invited Lecture will have 25 minutes for presentation and 5 minutes for discussion. Invited Talk will have 40 minutes for presentation and 10 minutes for discussion. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Thu, Nov 7, 2019 - Fri, Nov 8, 2019: Kikai-Shinko-Kaikan Bldg. [Mon, Sep 2], Topics: Process, Device, Circuit simulation, etc. Tue, Dec 24, 2019: NAIST [Sun, Oct 27], Topics: Semiconductor Material Process and Device Meeting Tue, Jan 28, 2020: Kikai-Shinko-Kaikan Bldg. [unfixed] # SECRETARY: Tetsu Morooka(Toshiba Memory Corp.) Tel 059-390-7451 Fax 059-361-2739 E-mail:          ba Last modified: 2019-08-26 18:34:58 |
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