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Technical Committee on Silicon Device and Materials (SDM)
Chair: Shunichiro Ohmi (Tokyo Inst. of Tech.) Vice Chair: Tatsuya Usami (ASM Japan)
Secretary: Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic)
Assistant: Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (SanDisk)
DATE:
Wed, Oct 19, 2022 09:30 - 17:45
PLACE:
TOPICS:
Process Science and New Process Technology
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Wed, Oct 19 AM (09:30 - 10:20)
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----- ( 40 min. ) -----
----- Break ( 10 min. ) -----
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Wed, Oct 19 AM (10:20 - 17:45)
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(1) 10:20 - 11:10
[Invited Talk]
Needs for X-ray Optical Elements
-- Expectations for New Process Technology --
Wataru Yashiro (Tohoku Univ.)
(2) 11:10 - 11:35
Resistance Masurement Technology for Statistical Analysis of Thin Films Materials for Emerging Memory with High Accuracy and Wide Range
Hidemi Mitsuda, Ryousuke Tenman, Takezou Mawaki, Rihito Kuroda (Tohoku Univ)
(3) 11:35 - 12:00
A study on threshold voltage control of MFSFET with ultrathin ferroelectric nondoped HfO2 gate insulator for analog memory applications
Joong-Won Shin, Masakazu Tanuma, Shun-ichiro Ohmi (Tokyo Tech)
----- Lunch Break ( 75 min. ) -----
(4) 13:15 - 14:05
[Invited Talk]
Fabrication of monolayer h-BN/LaB6 heterostructure using thermally aggregation method and its evaluation
Katsumi Nagaoka, Takashi Aizawa, Shun-ichiro Ohmi (NIMS)
(5) 14:05 - 14:30
Evaluation and analysis of ferroelectric BiFeO3 thin film surface
Fuminobu Imaizumi (NIT, Oyama)
(6) 14:30 - 14:55
The effect of microstructures of CrSiC thin film resistors on the electrical properties
Nozomi Ito, Kazuyoshi Maekawa, Yuji Takahashi, Takashi Tonegawa (Renesas)
----- Break ( 20 min. ) -----
(7) 15:15 - 16:05
[Invited Talk]
Fabrication of organic ferroelectric transistors using paper substrates and application to organic solar cells
Park Byung Eun (University of Seoul), Shun-ichiro Ohmi (TIT)
(8) 16:05 - 16:30
A study on low-voltage operation of pentacene-based floating-gate memory utilizing Ar/N2-plasma nitridation with N-doped LaB6 metal and high-k LaBxNy insulator
Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.)
(9) 16:30 - 17:20
[Invited Talk]
Reliability improvement of SiC MOSFET by high-temperature CO2 annealing
Takuji Hosoi (Kwansei Gakuin Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
(10) 17:20 - 17:45
A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films
Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech)
----- ( 30 min. ) -----
# Information for speakers
Invited Talk will have 40 minutes for presentation and 10 minutes for discussion.
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:
Thu, Nov 10, 2022 - Fri, Nov 11, 2022: Online [Mon, Sep 5], Topics: Process, Device, Circuit simulation, etc.
Mon, Jan 30, 2023: Kikai-Shinko-Kaikan Bldg. B3-1 [unfixed]
Last modified: 2022-09-28 17:44:41
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