Fri, Jun 19 AM
09:30 - 17:30 |
| (1) |
09:30-09:50 |
[Invited Lecture]
Interface states characterization of Al2O3/AlGaN/GaN structures |
Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) |
| (2) |
09:50-10:10 |
[Invited Lecture]
Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy |
Yutaka Tokuda (Aich Inst. of Technol.) |
| (3) |
10:10-10:30 |
[Invited Lecture]
Al2O3/Ga2O3 interface structure and its surface orientation dependence |
Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) |
| |
10:30-10:50 |
Break ( 20 min. ) |
| (4) |
10:50-11:10 |
[Invited Lecture]
Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions |
Muentaka Noguchi, Toshiaki Iwamatsu, Naruhisa Miura, Shuhei Nakata, Satoshi Yamakawa (Mitsubishi Electric) |
| (5) |
11:10-11:30 |
[Invited Lecture]
Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC |
Daisuke Mori, Kei Inoue, Hideaki Teranishi, Takayuki Hirose, Aki Takigawa (Fuji Electric) |
| (6) |
11:30-11:50 |
[Invited Lecture]
Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface |
Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
| |
11:50-12:40 |
Break ( 50 min. ) |
| (7) |
12:40-13:00 |
Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally grown SiO2/4H-SiC Structure |
Hiromasa Watanabe, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ) |
| (8) |
13:00-13:20 |
First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation |
Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) |
| (9) |
13:20-13:40 |
Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides |
Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
| (10) |
13:40-14:00 |
Fabrication of PtGe/Ge contacts with low hole barrier and its application to metal source/drain Ge p-channel MOSFETs |
Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) |
| |
14:00-14:15 |
Break ( 15 min. ) |
| (11) |
14:15-14:35 |
Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology |
Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
| (12) |
14:35-14:55 |
Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer |
Akihiro Suzuki, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
| (13) |
14:55-15:15 |
Effect of annealing on defects in Ge1-xSnx epitaxial layers |
Takanori Asano, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
| (14) |
15:15-15:35 |
Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method |
Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) |
| |
15:35-15:50 |
Break ( 15 min. ) |
| (15) |
15:50-16:10 |
Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process |
Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) |
| (16) |
16:10-16:30 |
Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing |
Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) |
| (17) |
16:30-16:50 |
[Invited Lecture]
Bandgap opening and electrode contact resistances in bilayer graphene field-effect transistors |
Ryo Nouchi (Osaka Pref. Univ.) |
| (18) |
16:50-17:10 |
[Invited Lecture]
Electrostatically-controllable polarity of transistors on atomically-thin films |
Shu Nakaharai (NIMS), Tomohiko Iijima, Shinichi Ogawa, Katsunori Yagi, Naoki Harada, Kenjiro Hayashi, Daiyu Kondo, Makoto Takahashi (AIST), Songlin Li, Mahito Yamamoto, Yen-Fu Lin (NIMS), Keiji Ueno (Saitama Univ.), Kazuhito Tsukagoshi (NIMS), Shintaro Sato, Naoki Yokoyama (AIST) |
| (19) |
17:10-17:30 |
[Invited Lecture]
Fabrication and Characterization of MoS2 MOSFET with High-k/Metal Gate |
Takahiro Mori (AIST), Naruki Ninomiya (YNU), Noriyuki Uchida, Toshitaka Kubo (AIST), Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama (NIMS), Masatoshi Tanaka (YNU), Atsushi Ando (AIST) |
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