|
|
| Chair |
|
Koichi Maezawa (Univ. of Toyama) |
| Vice Chair |
|
Kunio Tsuda (Toshiba) |
| Secretary |
|
Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST) |
| Assistant |
|
Manabu Arai (New JRC), Masataka Higashiwaki (NICT) |
|
| Conference Date |
Wed, Jan 20, 2016 10:30 - 16:20 |
| Topics |
Power Devices and High-frequency Devices, Microwave, etc. |
| Conference Place |
|
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Wed, Jan 20 AM
10:30 - 16:20 |
| (1) |
10:30-10:55 |
[Invited Lecture]
Evaluation technology for SiC wafer and device characteristics  ED2015-112 |
Makoto Kitabatake (FUPET) |
| (2) |
10:55-11:20 |
[Invited Lecture]
Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter ED2015-113 |
Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa (Mitsubishi Electric) |
| (3) |
11:20-11:45 |
[Invited Lecture]
State-of-the-art technology of gallium oxide power devices ED2015-114 |
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) |
| |
11:45-13:30 |
Break ( 105 min. ) |
| (4) |
13:30-13:55 |
[Invited Lecture]
The unique features of GaN power devices and the technologies to utilize their innate advantages ED2015-115 |
Ken Nakahara, Kentaro Chikamatsu, Atsushi Yamaguchi, Naotaka Kuroda (ROHM) |
| (5) |
13:55-14:20 |
[Invited Lecture]
Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model
-- Comparison of semiconductor materials -- ED2015-116 |
Toshiyuki Oishi, Makoto Kasu (Saga Univ.) |
| (6) |
14:20-14:45 |
[Invited Lecture]
GaN Schottky Barrier Diode and Microwave Power Transmission ED2015-117 |
Yasuo Ohno (LaS) |
| |
14:45-15:05 |
Break ( 20 min. ) |
| (7) |
15:05-15:30 |
[Invited Lecture]
Improvement in fmax of InP-based HEMTs for THz ICs ED2015-118 |
Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) |
| (8) |
15:30-15:55 |
Analysis of Millimeter Wave Oscillation in GaN HEMT Unit Cell ED2015-119 |
Shinsuke Watanabe, Shouhei Imai, Eigo Kuwata, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto (Mitsubishi Electric) |
| (9) |
15:55-16:20 |
[Invited Lecture]
Development of GaN-HEMT for Microwave Applications ED2015-120 |
Takahisa Kawai (SEDI) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Invited Lecture | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Koji Matsunaga（NEC)
TEL：+81-44-435-8348 FAX：+81-44-455-8253
E- ： k-     fp   c
Toshikazu Suzuki (JAIST)
TEL : +81-761-51-1441 Fax : +81-761-51-1455
E- :  si  jaist |
Last modified: 2016-01-18 14:20:41
|