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Technical Committee on Component Parts and Materials (CPM) (Searched in: 2008)
Search Results: Keywords 'from:2008-05-15 to:2008-05-15'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, SDM | 2008-05-15 13:00 |
Aichi | Nagoya Institute of Technology | Effect of doughnut-type plate on crystal properties of LiMn2O4 films prepared by RF magnetron sputtering Takayuki Hosokawa, Kouichi Nakamura, Shunsuke Hosoe, Satoshi Sakai, Masaaki Isai (Shizuoka Univ.)  ED2008-1 CPM2008-9 SDM2008-21 |
The LiMn2O4 films for Li secondary batteries have been prepared by a RF magnetron sputtering method. The LiMn2O4 powder ... [more] | ED2008-1 CPM2008-9 SDM2008-21 pp.1-6 |
| CPM, ED, SDM | 2008-05-15 13:25 |
Aichi | Nagoya Institute of Technology | Preparation of LiMn2O4 films by RF magnetron sputtering Kouichi Nakamura, Takayuki Hosokawa, Satoshi Sakai, Shunsuke Hosoe, Masaaki Isai (Shizuoka Univ.) ED2008-2 CPM2008-10 SDM2008-22 |
Manganese oxides have been focused as a cathode material for Li secondary batteries. Preparation of LiMn2O4 thin films w... [more] | ED2008-2 CPM2008-10 SDM2008-22 pp.7-10 |
| CPM, ED, SDM | 2008-05-15 13:50 |
Aichi | Nagoya Institute of Technology | Evaluation of step-annealed SrS:Cu films for blue EL elements Norifumi Yamada, Kotochika Itakura, Yuji Kurachi, Masaaki Isai (Shizuoka University) ED2008-3 CPM2008-11 SDM2008-23 |
The SrS:Cu films have been focused as a blue-emitting electroluminescence(EL) elements. The step-annealing effects on th... [more] | ED2008-3 CPM2008-11 SDM2008-23 pp.11-14 |
| CPM, ED, SDM | 2008-05-15 14:25 |
Aichi | Nagoya Institute of Technology | Preparetion and Evaluation of SrS:Cu films for blue EL elements Yuji Kurachi, Kotochika Itakura, Norifumi Yamada, Masaaki Isai (Shizuoka University) ED2008-4 CPM2008-12 SDM2008-24 |
[more] | ED2008-4 CPM2008-12 SDM2008-24 pp.15-18 |
| CPM, ED, SDM | 2008-05-15 14:50 |
Aichi | Nagoya Institute of Technology | Preparation of β-Ga2O3 films by RF magnetron sputtering method Takashi Horiuchi, Masaaki Isai (Shizuoka Univ.) ED2008-5 CPM2008-13 SDM2008-25 |
Interest for environmental problems has been growing these days. Gallium oxide have been focused as an oxygen (O2) gas s... [more] | ED2008-5 CPM2008-13 SDM2008-25 pp.19-22 |
| CPM, ED, SDM | 2008-05-15 15:15 |
Aichi | Nagoya Institute of Technology | Preparation of TiO2 films by RF magnetron sputtering method Tatsuya Endo, Yuichi Mizuchi, Masaaki Isai (Shizuoka Univ.) ED2008-6 CPM2008-14 SDM2008-26 |
TiO2 films have been focused as a photocatalyst. They have remarkable properties, for example, to resolute organic pollu... [more] | ED2008-6 CPM2008-14 SDM2008-26 pp.23-28 |
| CPM, ED, SDM | 2008-05-15 15:50 |
Aichi | Nagoya Institute of Technology | Investigation of deep levels in GaPN by photoconductivity transient measurement Keita Izumi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2008-7 CPM2008-15 SDM2008-27 |
In order to realize an optoelectronic integrated circuit(OEIC) united Si integrated circuit and luminescent device, a lu... [more] | ED2008-7 CPM2008-15 SDM2008-27 pp.29-34 |
| CPM, ED, SDM | 2008-05-15 16:15 |
Aichi | Nagoya Institute of Technology | Fabrication and evaluation of InGaPN/GaPN DH LED light emitting diode grown by organometallic vapor phase epitaxy. Fumiya Matsuno, Susumu Hatakenaka, Yoshiyuki Nakanishi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.) |
III-V-N compound semiconductors are one of the promising materials to be applied in OEIC. GaP0.98N0.02 can be lattice-ma... [more] | |
| CPM, ED, SDM | 2008-05-15 16:40 |
Aichi | Nagoya Institute of Technology | An ultrasonic method for synthesis of ZnO nanostructure on glass substrates Kasimayan Uma, Tetsuo Soga, Takashi Jimbo (Nagoya Inst. of Tech.) ED2008-8 CPM2008-16 SDM2008-28 |
[more] | ED2008-8 CPM2008-16 SDM2008-28 pp.35-40 |
| CPM, ED, SDM | 2008-05-16 09:00 |
Aichi | Nagoya Institute of Technology | Synthesis of single walled carbon nanotubes using Ultrasonic nebulizer Ishwor Khatri, Tetsuo Soga, Takashi Jimbo (Nagoya Inst. of Tech.) ED2008-9 CPM2008-17 SDM2008-29 |
[more] | ED2008-9 CPM2008-17 SDM2008-29 pp.41-46 |
| CPM, ED, SDM | 2008-05-16 09:25 |
Aichi | Nagoya Institute of Technology | Growth of cupric oxide nanostructure by thermal oxidation of copper Jien-Bo Liang, Kasimayan Uma, Tetsuo Soga, Takashi Jimbo (Nagoya Inst. of Tech.) ED2008-10 CPM2008-18 SDM2008-30 |
[more] | ED2008-10 CPM2008-18 SDM2008-30 pp.47-50 |
| CPM, ED, SDM | 2008-05-16 09:50 |
Aichi | Nagoya Institute of Technology | Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures Masanobu Hiroki, Kazumi Nishimura, Noriyuki Watanabe, Yasuhiro Oda, Takashi Kobayashi (NTT PH Lab.) ED2008-11 CPM2008-19 SDM2008-31 |
In this letter, we report annealing temperature dependence of Al/Ti/Tl/Ni/Au contact structure on AlGaN/GaN heterostruct... [more] | ED2008-11 CPM2008-19 SDM2008-31 pp.51-56 |
| CPM, ED, SDM | 2008-05-16 10:25 |
Aichi | Nagoya Institute of Technology | Dislocation in AlGaN grown on grooved AlN Toshiaki Mori, Toshiaki Asai, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2008-12 CPM2008-20 SDM2008-32 |
[more] | ED2008-12 CPM2008-20 SDM2008-32 pp.57-60 |
| CPM, ED, SDM | 2008-05-16 10:50 |
Aichi | Nagoya Institute of Technology | On-resistance and Breakdown Voltage of Enhancement-Mode AlGaN/GaN Junction HFET Using p-GaN Gate Contact Ryohei Nega, Katsutoshi Mizuno, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2008-13 CPM2008-21 SDM2008-33 |
This paper reports normally-off mode nitride-based field-effect transistor using p-type gate contact. In order to realiz... [more] | ED2008-13 CPM2008-21 SDM2008-33 pp.61-66 |
| CPM, ED, SDM | 2008-05-16 11:15 |
Aichi | Nagoya Institute of Technology | Characterization of Low-Pressure MOCVD-grown AlxGa1-xN on Si substrates Kouichi Hiromori, Hiroyasu Ishikawa, Fumiyuki Tokura, Keita Shimanaka, Naoto Mori, Tomohiko Morimoto (Nagoya Inst. of Tech.) ED2008-14 CPM2008-22 SDM2008-34 |
AlxGa1-xN films were grown on Si substrates as a function of reactor pressure using a low-pressure MOCVD method. The Al... [more] | ED2008-14 CPM2008-22 SDM2008-34 pp.67-70 |
| CPM, ED, SDM | 2008-05-16 12:50 |
Aichi | Nagoya Institute of Technology | Lateral growth of GaAs(001)microchannel epitaxy grown by temperature difference method Yasumasa Tejima, Kenshiro Suzuki, Shigeya Naritsuka, Takahiro Maruyama (Meijo Univ.) ED2008-15 CPM2008-23 SDM2008-35 |
[more] | ED2008-15 CPM2008-23 SDM2008-35 pp.71-74 |
| CPM, ED, SDM | 2008-05-16 13:15 |
Aichi | Nagoya Institute of Technology | Effect of strain relaxation process on polarization in strained superlattice spin-polarized photocathode Yuya Maeda, Jin Xiuguang, Masatoshi Tanioku, Shingo Fuchi, Toru Ujihara, Yoshikazu Takeda, Naoto Yamamoto, Atsushi Mano, Yasuhide Nakagawa, Masahiro Yamamoto, Shoji Okumi, Nakanishi Tsutomu (Nagoya Univ.), Takashi Saka (Daido institute of Technology), Horinaka Hiromiti (Osaka Prefecture Univ.), Toshihiro Kato (Daido Steel Co. Ltd) ED2008-16 CPM2008-24 SDM2008-36 |
We successfully developed a super-high brightness and high-spin-polarization electron source based on GaAs/GaAsP strain ... [more] | ED2008-16 CPM2008-24 SDM2008-36 pp.75-80 |
| CPM, ED, SDM | 2008-05-16 13:40 |
Aichi | Nagoya Institute of Technology | Iodine doping of CdTe Layers on Si Substrates Grown by MOVPE ( I ) Akinobu Watanabe, Yasuhiro Kai, Wataru Yamada, Hatasu Ichihashi, Tomohiro Yoneyama, Daisuke Kato, Kazuya Matsumoto, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (Nagoya Inst. Tech.) ED2008-17 CPM2008-25 SDM2008-37 |
Iodine doping of CdTe layers grown on Si substrates by metal-organic vapor phase epitaxy has been studied using ethyliod... [more] | ED2008-17 CPM2008-25 SDM2008-37 pp.81-84 |
| CPM, ED, SDM | 2008-05-16 14:05 |
Aichi | Nagoya Institute of Technology | Iodine doping of CdTe Layers Grown on Si Substrates by MOVPE(II) Hatasu Ichihashi, Wataru Yamada, Yasuhiro Kai, Akinobu Watanabe, Tomoya Nakanishi, Hiroki Oka, Hajime Nakashima, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (Nagoya Inst. Tech.) ED2008-18 CPM2008-26 SDM2008-38 |
Growth characteristics of high resistive CdTe layers by metal-organic vapor phase epitaxy have been studied. Layers were... [more] | ED2008-18 CPM2008-26 SDM2008-38 pp.85-88 |
| CPM, ED, SDM | 2008-05-16 14:40 |
Aichi | Nagoya Institute of Technology | Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition Hidenori Ono, Kazuya Ogawa, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-19 CPM2008-27 SDM2008-39 |
4H-SiC Schottky Diodes are promising for application of high-power and high-frequency rectifiers．However it is reported... [more] | ED2008-19 CPM2008-27 SDM2008-39 pp.89-94 |
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