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Technical Committee on Electron Devices (ED) (Searched in: 2021)
Search Results: Keywords 'from:2021-11-25 to:2021-11-25'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, CPM, LQE | 2021-11-25 10:05 |
Online | Online | Chemical Bath Deposition of Cu<sub>2</sub>O films on ITO/glass substrates Taishu kamimoto, Takuma Ohmoto, Tomoaki Terasako (Ehime Univ.)  ED2021-15 CPM2021-49 LQE2021-27 |
[more] | ED2021-15 CPM2021-49 LQE2021-27 pp.1-6 |
| ED, CPM, LQE | 2021-11-25 10:30 |
Online | Online | Vapor-Liquid-Solid Growth of ZnGa<sub>2</sub>O<sub>4</sub> Nanostructures and Their Structural and Photoluminescence Properties Tomoaki Terasako, Takeshi Yoneda (Ehime Univ.), Naohiro Takahashi, Masakazu Yagi (Natl. INst. Technol., Kagawa Coll.) ED2021-16 CPM2021-50 LQE2021-28 |
[more] | ED2021-16 CPM2021-50 LQE2021-28 pp.7-12 |
| ED, CPM, LQE | 2021-11-25 10:55 |
Online | Online | Investigation of defects suppression in Cu halide thin films by emission spectroscopy Chikashi Fujishima, Kunihiko Tanaka, Kaito Watanabe, Naoya Tujimoto (Nagaoka Univ Tech) ED2021-17 CPM2021-51 LQE2021-29 |
In this study, CuBr1-xIx (CuBrI) thin films, which are transparent p-type semiconductors, were deposited on glass substr... [more] | ED2021-17 CPM2021-51 LQE2021-29 pp.13-18 |
| ED, CPM, LQE | 2021-11-25 11:20 |
Online | Online | Influence of Annealing on Ultraviolet Light Detecting Properties of PEDOT:PSS/ZnO Nanorods/ZnO:Ga Heterostructures Kohei Kobayashi, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.) ED2021-18 CPM2021-52 LQE2021-30 |
[more] | ED2021-18 CPM2021-52 LQE2021-30 pp.19-24 |
| ED, CPM, LQE | 2021-11-25 13:05 |
Online | Online | [Encouragement Talk]
Optimization of buried growth and optical properties for nanowire-based light emitter Yoshiya Miyamoto, Naoki Sone, Renji Okuda, Weifang Lu, Kazuma Ito, Shiori Yamamura, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.) ED2021-19 CPM2021-53 LQE2021-31 |
(To be available after the conference date) [more] | ED2021-19 CPM2021-53 LQE2021-31 pp.25-28 |
| ED, CPM, LQE | 2021-11-25 13:30 |
Online | Online | Indium Composition Dependence of Internal Quantum Efficiency in InGaN Quantum-Wells Measured by Simultaneous Microscopic Photoacoustic and Photoluminescence Spectroscopy Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) ED2021-20 CPM2021-54 LQE2021-32 |
Accurate estimation of internal quantum efficiency (IQE) is necessary for comprehensive understanding of the carrier dyn... [more] | ED2021-20 CPM2021-54 LQE2021-32 pp.29-32 |
| ED, CPM, LQE | 2021-11-25 13:55 |
Online | Online | Waveguide loss measurements in III-nitride laser structures Kenta Ogasawara (KIT), Shigeta Sakai, Tadashi Okumura, Koichi Naniwae (Ushio Inc), Atsushi A. Yamaguchi (KIT) ED2021-21 CPM2021-55 LQE2021-33 |
InGaN is a semiconductor alloy material made of a mix of InN and GaN. InGaN can emit entire visible light by changing th... [more] | ED2021-21 CPM2021-55 LQE2021-33 pp.33-36 |
| ED, CPM, LQE | 2021-11-25 14:35 |
Online | Online | Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT) ED2021-22 CPM2021-56 LQE2021-34 |
The fundamental material properties of GaN and its related materials have not been fully understood. One of the reasons ... [more] | ED2021-22 CPM2021-56 LQE2021-34 pp.37-40 |
| ED, CPM, LQE | 2021-11-25 15:00 |
Online | Online | Theoretical modeling of temperature-dependent PL spectra in InGaN quantum wells Shunya Hakamata, Takashi Fujita, Ryuichi Watanabe, Atsushi A Yamaguchi (KIT) ED2021-23 CPM2021-57 LQE2021-35 |
InGaN quantum-well (QW) light-emitting devices can cover the entire visible spectrum in principle, by changing the In co... [more] | ED2021-23 CPM2021-57 LQE2021-35 pp.41-44 |
| ED, CPM, LQE | 2021-11-25 15:25 |
Online | Online | Optical characterization of c-plane Al0.83In0.17N/GaN lattice-matched heterostructures Liyang Li, Kohei Shima (Tohoku Univ.), Mizuki Yamanaka (Nagoya Inst. Tech.), Kazunobu Kojima (Tohoku Univ.), Takashi Egawa (Nagoya Inst. Tech.), Akira Uedono (Univ. of Tsukuba), Ishibashi Shoji (AIST), Tetsuya Takeuchi (Meijo Univ.), Makoto Miyoshi (Nagoya Inst. Tech.), Shigefusa Chichibu (Tohoku Univ.) ED2021-24 CPM2021-58 LQE2021-36 |
Room-temperature (RT) time-resolved photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements ... [more] | ED2021-24 CPM2021-58 LQE2021-36 pp.45-50 |
| ED, CPM, LQE | 2021-11-25 16:05 |
Online | Online | Substrate off-cut angle dependence on fabrication of high-temperature annealed a-plane AlN on r-plane sapphire Kota Shibutani, Kenjiro Uesugi, Shiyu Xiao, Kanako Shojiki, Shigeyuki Kuboya, Toru Akiyama, Hideto Miyake (Mie Univ.) ED2021-25 CPM2021-59 LQE2021-37 |
[more] | ED2021-25 CPM2021-59 LQE2021-37 pp.51-54 |
| ED, CPM, LQE | 2021-11-25 16:30 |
Online | Online | Growth of 220-nm-band-emission AlGaN Quantum Wells Using Annealed Sputtered AlN Template Shoya Ishihara, Shigeyuki Kuboya, Kanako Shojiki, Kenjiro Uesugi, Xiao Shiyu, Hideto Miyake (Mie Univ.) ED2021-26 CPM2021-60 LQE2021-38 |
[more] | ED2021-26 CPM2021-60 LQE2021-38 pp.55-58 |
| ED, CPM, LQE | 2021-11-25 16:55 |
Online | Online | Evaluation of PV performance of GaInN besed photovoltaic cells under monochromatic light illumination for optical wireless power transmission system Taiki Nakabayashi, Kousuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-27 CPM2021-61 LQE2021-39 |
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] | ED2021-27 CPM2021-61 LQE2021-39 pp.59-62 |
| ED, CPM, LQE | 2021-11-26 13:00 |
Online | Online | Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy Kenji Shiojima (Univ. of Fukui), Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Edo Masaharu (Fuji electric co.) ED2021-28 CPM2021-62 LQE2021-40 |
We report the basic electrical characteristics and uniformity of 25 Au/Ni Schottky barrier diodes (SBDs) with three diff... [more] | ED2021-28 CPM2021-62 LQE2021-40 pp.63-66 |
| ED, CPM, LQE | 2021-11-26 13:25 |
Online | Online | Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui) ED2021-29 CPM2021-63 LQE2021-41 |
Uniformity characterization of Ni/SiC, Ni/GaN, and Cu/Ti/$alpha$-Ga2O3 Schottky contacts was performed by scanning inter... [more] | ED2021-29 CPM2021-63 LQE2021-41 pp.67-70 |
| ED, CPM, LQE | 2021-11-26 13:50 |
Online | Online | Interface charge engineering in normally-off AlTiO/AlGaN/GaN field-effect transistors Duong Dai Nguyen, Takehiro Isoda, Yuchen Deng, Toshi-kazu Suzuki (JAIST) ED2021-30 CPM2021-64 LQE2021-42 |
[more] | ED2021-30 CPM2021-64 LQE2021-42 pp.71-74 |
| ED, CPM, LQE | 2021-11-26 14:30 |
Online | Online | Estimation of electrical characteristics of normally-off type AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech) ED2021-31 CPM2021-65 LQE2021-43 |
[more] | ED2021-31 CPM2021-65 LQE2021-43 pp.75-78 |
| ED, CPM, LQE | 2021-11-26 14:55 |
Online | Online | High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-32 CPM2021-66 LQE2021-44 |
In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N... [more] | ED2021-32 CPM2021-66 LQE2021-44 pp.79-82 |
| ED, CPM, LQE | 2021-11-26 15:20 |
Online | Online | Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2021-33 CPM2021-67 LQE2021-45 |
$Al_{0.85}Ga_{0.15}N$/$Al_{0.60}Ga_{0.40}N$ HEMT structures with channel thicknesses of 100–1000 nm were grown on low-di... [more] | ED2021-33 CPM2021-67 LQE2021-45 pp.83-86 |
| ED, CPM, LQE | 2021-11-26 16:00 |
Online | Online | Fabrication of Recessed-gate AlGaN/GaN HEMTs using Low-damage Contactless Photo-Electrochemical Etching Masachika Toguchi, Kazuki Miwa (Hokkaido Univ.), Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokkaido Univ.) ED2021-34 CPM2021-68 LQE2021-46 |
(To be available after the conference date) [more] | ED2021-34 CPM2021-68 LQE2021-46 pp.87-90 |
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