| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| ED, CPM, SDM |
2006-05-18
13:00 |
Aichi |
VBL, Toyohashi University of Technology |
Improvement of crystal properties of SrS:Cu films for EL elements by using a rapid thermal annealing
Masaaki Isai, Kosuke Sasaki, Daisuke Nakagawa (Shizuoka Univ.) |
[more] |
ED2006-20 CPM2006-7 SDM2006-20
pp.1-5 |
| ED, CPM, SDM |
2006-05-18
13:25 |
Aichi |
VBL, Toyohashi University of Technology |
Preparation and evaluation of Mn oxide films for Li secodary batteries
Yuji Chonan, Masaaki Isai, Yasushi Tojyo (Ｓｈｉｚｕｏｋａ Ｕｎｉｖ．) |
[more] |
ED2006-21 CPM2006-8 SDM2006-21
pp.7-10 |
| ED, CPM, SDM |
2006-05-18
13:50 |
Aichi |
VBL, Toyohashi University of Technology |
Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga2O3 Films Deposited by CSD Method for High Temperatures
Marilena Bartic (Shizuoka Univ.), Cristian-Ioan Baban (Al. I. Cuza Univ.), Masaaki Isai, Masami Ogita (Shizuoka Univ.) |
[more] |
ED2006-22 CPM2006-9 SDM2006-22
pp.11-14 |
| ED, CPM, SDM |
2006-05-18
14:15 |
Aichi |
VBL, Toyohashi University of Technology |
Fabrication of epitaxial γ-Al2O3 thin films by an oxide reduction method and its device applications
Takayuki Okada, Mikinori Ito (Toyohashi Univ. of Tech.), Kazuaki Sawada, Makoto Ishida (Toyohashi Univ. of Tech./JST) |
[more] |
ED2006-23 CPM2006-10 SDM2006-23
pp.15-20 |
| ED, CPM, SDM |
2006-05-18
14:50 |
Aichi |
VBL, Toyohashi University of Technology |
RPE-MOCVD-growth of Zn1-xCdxO film for visible emission region
Toshiya Ohashi, Junji Ishihara, Atsushi Nakamura, Toru Aoki, Jiro Temmyo (Shizuoka Univ.) |
[more] |
ED2006-24 CPM2006-11 SDM2006-24
pp.21-26 |
| ED, CPM, SDM |
2006-05-18
15:15 |
Aichi |
VBL, Toyohashi University of Technology |
Control of ZnO nanodots on sapphire substrate.
Kota Okamatsu, Satoshi Nakagawa, Atsushi Nakamura, Toru Aoki, Jiro Temmyo (Shizuoka Univ.) |
[more] |
ED2006-25 CPM2006-12 SDM2006-25
pp.27-32 |
| ED, CPM, SDM |
2006-05-18
15:40 |
Aichi |
VBL, Toyohashi University of Technology |
Contorol of carbon-nano structure by thermal decomposition on SiC
Yoshitaka Hashimoto, Guogiang Zhang, Atsushi Nakamura, Akira Tanaka, Jiro Temmyo (Sizuoka Univ.) |
[more] |
ED2006-26 CPM2006-13 SDM2006-26
pp.33-37 |
| ED, CPM, SDM |
2006-05-18
16:05 |
Aichi |
VBL, Toyohashi University of Technology |
Synthesis of GaN based blue phosphors using metal EDTA complex
Shinya Koide, Kazuya Nakamura, Yuhuai Liu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ), Atsushi Nakamura, Nobuyishi Nanbu (chubu chelest) |
[more] |
ED2006-27 CPM2006-14 SDM2006-27
pp.39-44 |
| ED, CPM, SDM |
2006-05-18
16:30 |
Aichi |
VBL, Toyohashi University of Technology |
Fabrication and Characterization of Photonic Crystal structure on microfabricated Si Substrate
Takeharu Ishii, Fumiaki Matsuoka, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) |
[more] |
ED2006-28 CPM2006-15 SDM2006-28
pp.45-50 |
| ED, CPM, SDM |
2006-05-19
09:00 |
Aichi |
VBL, Toyohashi University of Technology |
Microstructure of group-III nitride semiconductors grown on m-plane SiC
Tetsuya Nagai, Takeshi Kawashima, Kiyotaka Nakano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) |
[more] |
ED2006-29 CPM2006-16 SDM2006-29
pp.51-54 |
| ED, CPM, SDM |
2006-05-19
09:25 |
Aichi |
VBL, Toyohashi University of Technology |
Heteroepitaxy of GaN for Si-GaN OEIC
Tatsuya Kawano, Susumu Hatakenaka, Mikinori Itoh, Akihiro Wakahara, Hiroshi Okada, Makoto Ishida (Toyohashi Univ. Tech.) |
A novel Si/GaN/g-Al2O3/Si structure by which both Si-LSI(Large scale integrated circuit) and GaN-based optical devices c... [more] |
ED2006-30 CPM2006-17 SDM2006-30
pp.55-60 |
| ED, CPM, SDM |
2006-05-19
09:50 |
Aichi |
VBL, Toyohashi University of Technology |
Electrical Properties of GaPN
Akihiro Wakahara, Yuzo Furukawa, Atsushi Sato, Eri Shimada, Daisuke Minohara, Hiroo Yonezu (toyohashi Univ. of Tech.) |
[more] |
ED2006-31 CPM2006-18 SDM2006-31
pp.61-65 |
| ED, CPM, SDM |
2006-05-19
10:15 |
Aichi |
VBL, Toyohashi University of Technology |
InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits
Kazuyuki Umeno, Sung Man Kim, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) |
Direct-transition InGaPN/GaPN quantum well (QW) structures were grown on GaP substrates by RF-MBE at 500ºC for appl... [more] |
ED2006-32 CPM2006-19 SDM2006-32
pp.67-72 |
| ED, CPM, SDM |
2006-05-19
10:50 |
Aichi |
VBL, Toyohashi University of Technology |
Fabrication of MOSFETs and LEDs for Si/III-V-N Optoelectronic Integrated Circuits
Naruto Ohta, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) |
We fabricated pMOSFETs and LEDs using lattice-matched n-Si/III-V-N layers/p-Si-substrate structures for monolithic optoe... [more] |
ED2006-33 CPM2006-20 SDM2006-33
pp.73-78 |
| ED, CPM, SDM |
2006-05-19
11:15 |
Aichi |
VBL, Toyohashi University of Technology |
Improvement of crystal quality for high effeciency of spin-polarized electron source based on GaAs/GaAsP super-lattice structure
Toru Ujihara, Chen Bo, Kenichi Yasui, Ryosuke Sakai, Masahiro Yamamoto, Tsutomu Nakanisihi, Yoshikazu Takeda (Nagoya Univ.) |
[more] |
ED2006-34 CPM2006-21 SDM2006-34
pp.79-84 |
| ED, CPM, SDM |
2006-05-19
11:40 |
Aichi |
VBL, Toyohashi University of Technology |
Fabrication of patterned GaInAs/GaAs hetero-structure using amorphous arsenic mask
Yosuke Noritake, Takumi Yamada, Masao Tabuchi, Yoshikazu Takeda (Nagoya Univ.) |
To form patterned GaInAs/GaAs hetero-structures, we propose a new formation process using amorphous As as a mask. The p... [more] |
ED2006-35 CPM2006-22 SDM2006-35
pp.85-90 |
| ED, CPM, SDM |
2006-05-19
13:10 |
Aichi |
VBL, Toyohashi University of Technology |
Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer
Junji Kotani, Masamitsu Kaneko, Tamotsu Hashizume (Hokkaido Univ.) |
[more] |
ED2006-36 CPM2006-23 SDM2006-36
pp.91-94 |
| ED, CPM, SDM |
2006-05-19
13:35 |
Aichi |
VBL, Toyohashi University of Technology |
Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces
Mariko Suzuki (Toshiba), Satoshi Koizumi (NIMS), Masayuki Katagiri (Univ of Tsukuba), Tomio Ono, Naoshi Sakuma, Hiroaki Yoshida, Tadashi Sakai (Toshiba) |
[more] |
ED2006-37 CPM2006-24 SDM2006-37
pp.95-100 |
| ED, CPM, SDM |
2006-05-19
14:00 |
Aichi |
VBL, Toyohashi University of Technology |
Estimation of trap parameters from a slow component of excess carrier decay curves
Masaya Ichimura (Nagoya Inst. Technol.) |
In the photoconductivity decay measurement, a slow component is often observed, especially for wide-bandgap materials, e... [more] |
ED2006-38 CPM2006-25 SDM2006-38
pp.101-106 |
| ED, CPM, SDM |
2006-05-19
14:35 |
Aichi |
VBL, Toyohashi University of Technology |
Light irradiation effect on single-hole-tunneling current of an SOI-FET
Zainal A. Burhanudin, Ratno Nuryadi, Michiharu Tabe (Shizuoka Univ.) |
[more] |
ED2006-39 CPM2006-26 SDM2006-39
pp.107-111 |
|