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Technical Committee on Electron Devices (ED) (Searched in: 2009)
Search Results: Keywords 'from:2009-11-19 to:2009-11-19'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2009-11-19 09:00 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | GaN Re-growth Using Ta Mask Which Etches Covering GaN Layer Kohei Hara, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima)  ED2009-128 CPM2009-102 LQE2009-107 |
Two step growth of GaN is performed, and the metal which is selectively sandwiched into GaN is formed. A GaN downward is... [more] | ED2009-128 CPM2009-102 LQE2009-107 pp.1-4 |
| ED, LQE, CPM | 2009-11-19 09:25 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | HVPE growth of {11-22} GaN Crystals on m-plane Sapphire Substrates Hitoshi Sasaki, Hiroki Goto, Akira Usui (Furukawa Co., Ltd.) ED2009-129 CPM2009-103 LQE2009-108 |
{11-22} semi-polar plane GaN crystal layers are grown on sapphire substrates using HVPE technique. MOCVD-grown GaN / HT-... [more] | ED2009-129 CPM2009-103 LQE2009-108 pp.5-8 |
| ED, LQE, CPM | 2009-11-19 09:50 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | MOVPE growth and optical properties of AlGaN on AlN/sapphire Yuki Shimahara, Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) ED2009-130 CPM2009-104 LQE2009-109 |
We performed growth of AlGaN on AlN/sapphire substrate as an underlying layer by low-pressure MOVPE with in-situ monitor... [more] | ED2009-130 CPM2009-104 LQE2009-109 pp.9-12 |
| ED, LQE, CPM | 2009-11-19 10:25 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | MBE growth of well-aligned InN crystals using Mo-mask selective area growth technique Jumpei Kamimura, Katsumi Kishino, Akihiko Kikuchi (Sophia Univ./JST) ED2009-131 CPM2009-105 LQE2009-110 |
[more] | ED2009-131 CPM2009-105 LQE2009-110 pp.13-18 |
| ED, LQE, CPM | 2009-11-19 10:50 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | High quality InN crystal growh by RF-MBE
-- Growth of position-controlled InN nanocolumns -- Tsutomu Araki, Tomohiro Yamaguchi, Masamitsu Kaneko (Ritsumeikan Univ.), Yasushi Nanishi (Ritsumeikan Univ./Seoul National Univ.) ED2009-132 CPM2009-106 LQE2009-111 |
Position controlled InN nanocolumns were successfully grown by ECR-MBE and RF-MBE on hole-patterned GaN template fabrica... [more] | ED2009-132 CPM2009-106 LQE2009-111 pp.19-24 |
| ED, LQE, CPM | 2009-11-19 11:15 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Proposal of new growth method for high-quality InN and development on growth of InGaN Tomohiro Yamaguchi (Ritsumeikan Univ.), Yasushi Nanishi (Ritsumeikan Univ./Seoul National Univ.) ED2009-133 CPM2009-107 LQE2009-112 |
New radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) method, named droplet elimination by radical-beam ir... [more] | ED2009-133 CPM2009-107 LQE2009-112 pp.25-29 |
| ED, LQE, CPM | 2009-11-19 11:40 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Exciton emission mechanism in AlN epitaxial films Takeyoshi Onuma, Kouji Hazu (Tohoku Univ.), Takayuki Sota (Waseda Univ.), Akira Uedono (Univ. of Tsukuba), Shigefusa F. Chichibu (Tohoku Univ.) ED2009-134 CPM2009-108 LQE2009-113 |
Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of... [more] | ED2009-134 CPM2009-108 LQE2009-113 pp.31-34 |
| ED, LQE, CPM | 2009-11-19 13:05 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | High spatial resolution PL mapping of {11-22} InGaN quantum wells by scanning near-field optical microscope Akio Kaneta, Masaya Ueda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2009-135 CPM2009-109 LQE2009-114 |
Spatially resolved photoluminescence mapping was performed for c plane and {11-22} InGaN/GaN quantum wells (QWs) by a sc... [more] | ED2009-135 CPM2009-109 LQE2009-114 pp.35-38 |
| ED, LQE, CPM | 2009-11-19 13:30 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Mapping of luminous intensity saturation if InGaN/GaN SQWs studied by scanning near-field optical microscopy Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2009-136 CPM2009-110 LQE2009-115 |
The spatially resolved photoluminescence mappings under the various carrier densities are performed to clarify the pheno... [more] | ED2009-136 CPM2009-110 LQE2009-115 pp.39-42 |
| ED, LQE, CPM | 2009-11-19 13:55 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Anisotropy in structural and optical properties of nonpolar group III nitrides grown on ZnO substrates Atsushi Kobayashi, Kazuma Shimomoto, Kohei Ueno, Tomofumi Kajima, Jitsuo Ohta (Univ. of Tokyo), Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo/JST) ED2009-137 CPM2009-111 LQE2009-116 |
ZnO has been regarded as an ideal substrate for epitaxial growth of nonpolar group III nitride films because its structu... [more] | ED2009-137 CPM2009-111 LQE2009-116 pp.43-46 |
| ED, LQE, CPM | 2009-11-19 14:20 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations Kenji Shiraishi, Jun-ichi Iwata (Univ. of Tsukuba/JST), Teruaki Obata (Univ. of Tsukuba), Atsushi Oshiyama (Univ. of Tokyo/JST) ED2009-138 CPM2009-112 LQE2009-117 |
In-containing nitride semiconductors exhibit characteristic behavior which can be ascribed to the large difference in th... [more] | ED2009-138 CPM2009-112 LQE2009-117 pp.47-50 |
| ED, LQE, CPM | 2009-11-19 14:55 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Electrical and optical properties of polycrystalline GaInAs thin films Yoshichika Torii, Takuya Okuzako, Shin-ya Takami, Yasutomo Kajikawa (Shimane Univ.) ED2009-139 CPM2009-113 LQE2009-118 |
Polycrystalline GaxIn1-xAs films having Ga contents of x = 0-1 and the thickness of about 1μm were grown on glass substr... [more] | ED2009-139 CPM2009-113 LQE2009-118 pp.51-56 |
| ED, LQE, CPM | 2009-11-19 15:20 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Thermodynamical aspects for the raised pressure MOVPE for growth of GaInN Kensuke Nagata, Daisuke Iida, Kentaro Nagamatsu, Kenichiro Takeda, Tetsuya Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ) ED2009-140 CPM2009-114 LQE2009-119 |
High In content GaInN films are promising for many applications such as multi-junction tandem photovoltaic cells, high p... [more] | ED2009-140 CPM2009-114 LQE2009-119 pp.57-60 |
| ED, LQE, CPM | 2009-11-19 15:45 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Ultraviolet AlGaN based multiple-quantum-well laser diodes Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Yasufumi Takagi, Kazuya Uchiyama, Hirofumi Kan (Hamamatsu Photonics) ED2009-141 CPM2009-115 LQE2009-120 |
We have demonstrated the room-temperature operations of AlGaN based multi-quantum-well (MQW) laser diodes under pulsed-c... [more] | ED2009-141 CPM2009-115 LQE2009-120 pp.61-64 |
| ED, LQE, CPM | 2009-11-19 16:10 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Reduction in operating voltage of UV laser diode Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan (Hamamatsu Photonics K.K.) ED2009-142 CPM2009-116 LQE2009-121 |
Annealing condition for n-type electrode in AlGaN-based UV LD was investigated. High temperature annealing is found to b... [more] | ED2009-142 CPM2009-116 LQE2009-121 pp.65-69 |
| ED, LQE, CPM | 2009-11-19 16:45 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Fabrication of red, green and blue emitters using GaN-based UV Light-emitting diodes with Schottky-type structures Tohru Honda, Tadashi Nozaki, Naoyuki Sakai, Kazuyuki Noguchi (Kogakuin Univ.) ED2009-143 CPM2009-117 LQE2009-122 |
[more] | ED2009-143 CPM2009-117 LQE2009-122 pp.71-74 |
| ED, LQE, CPM | 2009-11-19 17:10 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | High Efficiency ultraviolet emitters by activation annealing in oxygen flow Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2009-144 CPM2009-118 LQE2009-123 |
Activation annealing of Mg-doped p-type Al0.17Ga0.83N in different gases was conducted. The hole concentration in Al0.17... [more] | ED2009-144 CPM2009-118 LQE2009-123 pp.75-80 |
| ED, LQE, CPM | 2009-11-19 17:35 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Proposal of ultrathin InN-based asymmetric structure III-N QWs for novel photonic devices
-- Development from emitters into solar cells -- Kazuhide Kusakabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.) ED2009-145 CPM2009-119 LQE2009-124 |
For a development of photonic devices utilizing InN properties, it is necessary to control (1) the p-type conductivity i... [more] | ED2009-145 CPM2009-119 LQE2009-124 pp.81-84 |
| ED, LQE, CPM | 2009-11-19 18:00 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | GaN Photodetector with Nanostructure on Surface Jing Zhang, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima), Atsuyuki Fukano, Satoru Tanaka (SCIVAX) ED2009-146 CPM2009-120 LQE2009-125 |
Conventional photodetector can detect intensity of incident light by voltage or current, but it is not intensive to the ... [more] | ED2009-146 CPM2009-120 LQE2009-125 pp.85-89 |
| ED, LQE, CPM | 2009-11-20 09:30 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | AlN growth on period trench patterned AlN/sapphire by Low-pressure HVPE Kohei Fujita, Kazuteru Okuura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Jyun Norimatsu, Hideki Hirayama (Riken) ED2009-147 CPM2009-121 LQE2009-126 |
High-quality AlN thick film were grown on trench-patterned AlN template by Low-pressure HVPE. Compared with the normal t... [more] | ED2009-147 CPM2009-121 LQE2009-126 pp.91-94 |
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