Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM |
2010-02-22 13:00 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Neuromorphic adiabatic quantum computation based on phosphorus nuclear spin array in Si Mitsunaga Kinjo (Univ. of the Ryukyus), Shigeo Sato (Tohoku Univ.) ED2009-196 SDM2009-193 |
[more] |
ED2009-196 SDM2009-193 pp.1-3 |
ED, SDM |
2010-02-22 13:25 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Seebeck coefficient in heavily-doped SOI layers Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.) ED2009-197 SDM2009-194 |
We have investigated the Seebeck coefficient of Si nanostructures, especially, ultrathin P-doped SOI (silicon-on-insulat... [more] |
ED2009-197 SDM2009-194 pp.5-9 |
ED, SDM |
2010-02-22 13:50 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Stochastic Resonance Devices Based on Carbon Nanotube Field-Effect Transistors Yasufumi Hakamata, Yasuhide Ohno, Kenzo Maehashi (ISIR Osaka Univ.), Seiya Kasai (RCIQE Hokkaido Univ.), Koichi Inoue, Kazuhiko Matsumoto (ISIR Osaka Univ.) ED2009-198 SDM2009-195 |
Stochastic resonance in carbon nanotube field-effect transistors (CNT-FETs) was investigated to enhance weak-signal resp... [more] |
ED2009-198 SDM2009-195 pp.11-15 |
ED, SDM |
2010-02-22 14:15 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Analysis on Stochastic Resonance Behavior of Single Electron in Quantum Dots Seiya Kasai (Hokkaido Univ/JST), Yuta Shiratori, Kensuke Miura (Hokkaido Univ.) ED2009-199 SDM2009-196 |
Stochastic resonance (SR) in single-electron charging and discharging process on quantum dots (QDs) is demonstrated theo... [more] |
ED2009-199 SDM2009-196 pp.17-21 |
ED, SDM |
2010-02-22 14:50 |
Okinawa |
Okinawaken-Seinen-Kaikan |
MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi (Nagoya Univ.) ED2009-200 SDM2009-197 |
We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN str... [more] |
ED2009-200 SDM2009-197 pp.23-28 |
ED, SDM |
2010-02-22 15:15 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory Tatsuya Okada (Univ. of the Ryukyus), Seiichiro Higashi, Katsunori Makihara, Yasuo Hiroshige, Seiichi Miyazaki (Hiroshima Univ.) ED2009-201 SDM2009-198 |
We investigated formation of Si nanocrystals in SiOx (1.0 < x < 1.9) films induced by millisecond annealing using therma... [more] |
ED2009-201 SDM2009-198 pp.29-33 |
ED, SDM |
2010-02-22 15:40 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration Shunsuke Ueno, Yusuke Tomoda, Watari Kume, Michinobu Hanada, Kazutoshi Takiya, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2009-202 SDM2009-199 |
We report a novel technique for the integration of planer-type single-electron transistors (SETs) based on nanogaps usin... [more] |
ED2009-202 SDM2009-199 pp.35-39 |
ED, SDM |
2010-02-22 16:05 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Fabrication of Planar-Type Ferromagnetic Tunnel Junctions Using Field-Emission-Induced Electromigration Kazutoshi Takiya, Yusuke Tomoda, Takato Watanabe, Watari Kume, Shunsuke Ueno, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech) ED2009-203 SDM2009-200 |
We study nanometer-sized spintronic devices with ferromagnetic tunnel junctions. Tunnel magnetoresitance (TMR) observed ... [more] |
ED2009-203 SDM2009-200 pp.41-45 |
ED, SDM |
2010-02-22 16:30 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Observation of enhanced MR effects in a single electron transistor with ferromagnetic lead electrodes Nobuyuki Tamura, Kento Kikuchi, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro-Comm.) ED2009-204 SDM2009-201 |
We report our experimental results on the magneto-resistance ratio ($MRR$) of single-electron
transistors (SETs)
wit... [more] |
ED2009-204 SDM2009-201 pp.47-52 |
ED, SDM |
2010-02-23 09:30 |
Okinawa |
Okinawaken-Seinen-Kaikan |
[Invited Talk]
Effect of interface properties on characteristics of carbon nanotube FETs Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2009-205 SDM2009-202 |
In order to control the property of carbon nanotube field-effect transistors (CNFETs), it is important to understand pro... [more] |
ED2009-205 SDM2009-202 pp.53-58 |
ED, SDM |
2010-02-23 10:10 |
Okinawa |
Okinawaken-Seinen-Kaikan |
CMOS inverters based on carbon nanotube field-effect transistors with SiNx passivation films Takaomi Kishimoto, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto (ISIR, Osaka Univ.) ED2009-206 SDM2009-203 |
We have demonstrated logic gates based on complementary carbon nanotube field-effect transistors (CNT-FETs) with SiNx pa... [more] |
ED2009-206 SDM2009-203 pp.59-63 |
ED, SDM |
2010-02-23 10:35 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Fabrication of nanowire-based sequential circuits using gate-controlled GaAs three-branch nanowire junctions Hiromu Shibata, Daisuke Nakata, Yuta Shiratori (Hokkaido Univ), Seiya Kasai (Hokkaido Univ/JST) ED2009-207 SDM2009-204 |
A novel sequential circuit integrating gate-controlled three-branch nanowire junctions (TBJs) is described. A TBJ shows ... [more] |
ED2009-207 SDM2009-204 pp.65-70 |
ED, SDM |
2010-02-23 11:00 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Compact Reconfigurable BDD Logic Circuits utilizing GaAs Nanowire Network Yuta Shiratori, Kensuke Miura (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ./JST) ED2009-208 SDM2009-205 |
We describe a reconfigurable binary-decision-diagram logic circuit based on Shannon’s expansion of Boolean logic functio... [more] |
ED2009-208 SDM2009-205 pp.71-76 |
ED, SDM |
2010-02-23 11:35 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Detectors of Terahertz and Infrared Radiation Based on p-i-n Single- and Multiple Graphene Layer Structures Victor Ryzhii, Maxim Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.), Vladimir Mitin (Buffalo Univ.) ED2009-209 SDM2009-206 |
Detectors of terahertz and infrared radiation based on p-i-n graphene structures utilizing interband transitions are pro... [more] |
ED2009-209 SDM2009-206 pp.77-80 |
ED, SDM |
2010-02-23 12:00 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Electrical Property of CNT/cellulose Composite Paper Tomo Tanaka, Eiichi Sano (Hokkaido Univ.), Kousuke Akiyama, Masanori Imai (Tokushu Paper) ED2009-210 SDM2009-207 |
We fabricated multi-walled carbon nanotube/cellulose composite papers and measured their temperature dependences of elec... [more] |
ED2009-210 SDM2009-207 pp.81-85 |
ED, SDM |
2010-02-23 12:25 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Nonvolatile memory based on carbon nanotube field-effect transistors Kenzo Maehashi, Takahiro Ohori, Satoshi Nagaso, Koichi Inoue, Kazuhiko Matsumoto (Osaka Univ.) ED2009-211 SDM2009-208 |
We have fabricated nonvolatile memory based on top-gated carbon nanotube field-effect transistors (CNTFETs). Two kinds o... [more] |
ED2009-211 SDM2009-208 pp.87-91 |