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Technical Committee on Electron Devices (ED) (Searched in: 2010)
Search Results: Keywords 'from:2010-06-17 to:2010-06-17'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2010-06-17 13:00 |
Ishikawa | JAIST | Growth of InSb films on the V-grooved Si(001) substrate with InSb bi-layer Tatsuya Iwasugi, Sara Khamseh, Azusa Kadoda, Kimihiko Nakatani, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)  ED2010-33 |
We have reported that InSb films grown on a Si(111) substrate with InSb bi-layer rotate by 30° degree with respect to Si... [more] | ED2010-33 pp.1-4 |
| ED | 2010-06-17 13:25 |
Ishikawa | JAIST | Fabrication and characterization of InAs ultra-thin films on flexible substrates Hayato Takita, Norihiko Hashimoto, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST) ED2010-34 |
(To be available after the conference date) [more] | ED2010-34 pp.5-9 |
| ED | 2010-06-17 13:50 |
Ishikawa | JAIST | Electrochemical Formation of InP Porous Structures and Their Application to High-Sensitive Chemical Sensors Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) ED2010-35 |
(To be available after the conference date) [more] | ED2010-35 pp.11-15 |
| ED | 2010-06-17 14:25 |
Ishikawa | JAIST | Analysis of electron velocity reduction rate due to self-heating in AlGaN/GaN heterojunction field-effect transistors Toshi-kazu Suzuki, Nariaki Tanaka (JAIST) ED2010-36 |
(To be available after the conference date) [more] | ED2010-36 pp.17-20 |
| ED | 2010-06-17 14:50 |
Ishikawa | JAIST | Electrical Characterization of Recessed-gate AlgaN/GaN Heterojunction FETs Misato Mukohno, Naoki Yamada, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui.) ED2010-37 |
Recessed-gate AlGaN/GaN HFETs have been fabricated by using BCl3-based ICP dry-etching. It was confirmed that the thresh... [more] | ED2010-37 pp.21-24 |
| ED | 2010-06-17 15:15 |
Ishikawa | JAIST | Fabrication of high-frequency and high-power AlGaN/GaN HEMTs Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.) ED2010-38 |
High-power AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and... [more] | ED2010-38 pp.25-30 |
| ED | 2010-06-17 15:50 |
Ishikawa | JAIST | Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs Masataka Higashiwaki (NICT/JST/UCSB), Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra (UCSB) ED2010-39 |
We investigated effects of surface oxidation by annealing during device process on AlGaN surface barrier height of AlGaN... [more] | ED2010-39 pp.31-35 |
| ED | 2010-06-17 16:15 |
Ishikawa | JAIST | Understanding of C-V characteristics in AlGaN/GaN MIS structure Chihoko Mizue (Hokkaido Univ., RCIQE), Tamotsu Hashizume (Hokkaido Univ., RCIQE, JST-CREST) ED2010-40 |
[more] | ED2010-40 pp.37-40 |
| ED | 2010-06-17 16:40 |
Ishikawa | JAIST | Effect of interface properties on characteristics of carbon nanotube FETs Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2010-41 |
[more] | ED2010-41 pp.41-45 |
| ED | 2010-06-18 10:00 |
Ishikawa | JAIST | Theoretical Analysis of Carrier Transport in Nano-Scale InGaAs-Channel MOSFETs Takahiro Homma, Hisanao Watanabe, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Science.) ED2010-42 |
Because of higher carrier mobility owing to small effective mass, III-V compound semiconductors have been attracted much... [more] | ED2010-42 pp.47-52 |
| ED | 2010-06-18 10:25 |
Ishikawa | JAIST | Theoretical analysis of operating conditions to suppress relaxation oscillations in Resonant Tunneling Diode biased at negative differential resistance region Yosuke Itagaki, Kiyoto Asakawa, Hideaki Shin-ya, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro.Univ) ED2010-43 |
A resonant tunneling diode (RTD) is an active device with negative differential resistance operating up to THz region in... [more] | ED2010-43 pp.53-58 |
| ED | 2010-06-18 10:50 |
Ishikawa | JAIST | Promotion of power generation in Si solar cells made from low-purity Si wafers Fumihiko Hirose, Yuki Sano, Satoru Tuzuki, Takahiko Suzuki (Yamagata Univ.) ED2010-44 |
[more] | ED2010-44 pp.59-61 |
| ED | 2010-06-18 11:25 |
Ishikawa | JAIST | Removal of Cu contaminants on silicon material surfaces by defect passivation etchless cleaning solutions Masao Takahashi, Yuko Higashi, Hiroaki Narita, Hitoo Iwasa, Hikaru Kobayashi (Osaka Univ/JST) ED2010-45 |
Dilute HCN aqueous solutions with a concentration of 1ppm can remove Cu contaminants of 10^{12}~10^{13} atomc/cm^{2} con... [more] | ED2010-45 pp.63-68 |
| ED | 2010-06-18 11:50 |
Ishikawa | JAIST | Photo corrosion of Metal Gate Electrodes during Wet Daisuke Watanabe (Daikin Industries,Ltd.), Chiharu Kimura, Hidemitsu Aoki (Osaka Univ.) ED2010-46 |
Wet processes for removing high-k film involve the risk of enhanced galvanic corrosion at the gate electrode level. We f... [more] | ED2010-46 pp.69-74 |
| ED | 2010-06-18 12:15 |
Ishikawa | JAIST | Methyl-BCN Film using Low Temperature Etching. Hidemitsu Aoki, Makoto Hara, Takuro Masuzumi, Zhiming Lu, Tomohiro Kuki, Chiharu Kimura, Takashi Sugino (Osaka Univ.) ED2010-47 |
[more] | ED2010-47 pp.75-80 |
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