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Technical Committee on Lasers and Quantum Electronics (LQE) (Searched in: 2022)
Search Results: Keywords 'from:2022-11-24 to:2022-11-24'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, LQE | 2022-11-24 10:05 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Application of Chemical Bath Deposited ZnO Nanorods to UV Light Detectors and Influence of CBD Solution Concentration on Their Device Properties Taichi Fujikawa, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.)  ED2022-24 CPM2022-49 LQE2022-57 |
PEDOT:PSS/ZnO nanorods (NRs)/GZO heterojunction UV light detectors with the ZnO NRs layers grown from the CBD solutions ... [more] | ED2022-24 CPM2022-49 LQE2022-57 pp.1-4 |
| CPM, ED, LQE | 2022-11-24 10:25 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Voltage-Current Characteristics and Optical Responses of PEDOT:PSS/ZnO Nanorods/GZO Heterojunctions Tomoaki Terasako (Ehime Univ), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.) ED2022-25 CPM2022-50 LQE2022-58 |
Volage-current (V-I) curves of the PEDOT:PSS/ZnO NRs/GZO heterojunctions exhibited a rectification behavior with hystere... [more] | ED2022-25 CPM2022-50 LQE2022-58 pp.5-10 |
| CPM, ED, LQE | 2022-11-24 10:45 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
CVD growth of 2D layered material g-C3N4/SnS2/graphene heterojunction Youhei Mori, Kota Matsuoka, Baskar Malathi, Atsushi Nakamura (Shizuoka Univ) ED2022-26 CPM2022-51 LQE2022-59 |
Artificial photosynthesis is a technology that uses sunlight to convert water and carbon dioxide into valuable solar f... [more] |
ED2022-26 CPM2022-51 LQE2022-59 pp.11-16 |
| CPM, ED, LQE | 2022-11-24 11:15 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Synthesis of g-C3N4/SnS2 composites for artificial photosynthesis application Matsuoka Kota, Mori Youhei, Baskar Malathi, Nakamura Atsushi (Shizuoka Univ.) ED2022-27 CPM2022-52 LQE2022-60 |
(To be available after the conference date) [more] | ED2022-27 CPM2022-52 LQE2022-60 pp.17-22 |
| CPM, ED, LQE | 2022-11-24 11:35 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Semiconducting properties of electrochemically deposited Ni(OH)2 thin films Masahide Shimura, Koji Abe (Nitech) ED2022-28 CPM2022-53 LQE2022-61 |
Abstract Metal hydroxides are important inorganic materials used as flame retardants and precursors for metal oxide syn... [more] | ED2022-28 CPM2022-53 LQE2022-61 pp.23-26 |
| CPM, ED, LQE | 2022-11-24 11:55 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Development of haptic gloves for communication Ryuhei Takeda, Atsushi Nakamura, Kamen Kanev (Shizuoka Univ.) ED2022-29 CPM2022-54 LQE2022-62 |
This study proposes a haptic glove, an interface for remote two-way communication with deaf-blind people and evaluates t... [more] | ED2022-29 CPM2022-54 LQE2022-62 pp.27-32 |
| CPM, ED, LQE | 2022-11-24 13:05 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Al-doped ZnO thin films deposited by sol-gel method Koji Abe, Tasuku Kubota (NITech) ED2022-30 CPM2022-55 LQE2022-63 |
Sol-gel process is used to deposit oxide semiconductor thin films such as zinc oxide (ZnO). However, resistivity of ZnO ... [more] | ED2022-30 CPM2022-55 LQE2022-63 pp.33-36 |
| CPM, ED, LQE | 2022-11-24 13:25 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Development of Flexible and Conductive Nanocarbon-based Fibers by Wet Spinning Method Hikaru Kondo, Haruka Jin, Rena Kato, Tetsuo Soga, Naoki Kishi (NIT) ED2022-31 CPM2022-56 LQE2022-64 |
Lightweight and stretchable conductive fibers are fabricated by combining nanocarbon materials with stretchable material... [more] | ED2022-31 CPM2022-56 LQE2022-64 pp.37-39 |
| CPM, ED, LQE | 2022-11-24 13:45 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Fabrication of MgSnO thin film using sol-gel method for SnS/MgSnO thin film solar cell Kengo Inagaki, Yasushi Takano, Keito Shioda (Shizuoka Univ.) ED2022-32 CPM2022-57 LQE2022-65 |
We prepared magnesium tin oxide (referred to as MTO) thin film on FTO (fluorine doped tin oxide) by the sol-gel method. ... [more] | ED2022-32 CPM2022-57 LQE2022-65 pp.40-44 |
| CPM, ED, LQE | 2022-11-24 14:15 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Hiroki Imabayashi (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara (Sumitomo Chemical Co, Ltd.), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) ED2022-33 CPM2022-58 LQE2022-66 |
[more] | ED2022-33 CPM2022-58 LQE2022-66 pp.45-48 |
| CPM, ED, LQE | 2022-11-24 14:35 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Evaluation of Fe Induced Trap in GaN HEMTs using Low-Frequency Y22 Measurement Taiki Nishida, Toshiyuki Oishi (Saga Univ.), Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Elec. Corp.) ED2022-34 CPM2022-59 LQE2022-67 |
One issue in improving amplifier performance using GaN is evaluating the characteristics of traps. In this study, we eva... [more] | ED2022-34 CPM2022-59 LQE2022-67 pp.49-52 |
| CPM, ED, LQE | 2022-11-24 14:55 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Fabrication and characterization of AlGaInN/GaN HEMTs on Single-Crystal AlN Substrate SakuraTanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) ED2022-35 CPM2022-60 LQE2022-68 |
[more] | ED2022-35 CPM2022-60 LQE2022-68 pp.53-56 |
| CPM, ED, LQE | 2022-11-24 15:15 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs Yusuke Iida, Akira Mase, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi (NITech) ED2022-36 CPM2022-61 LQE2022-69 |
GaN-based HBTs are very promising as next-generation high-frequency power devices. However, when considering the realiza... [more] | ED2022-36 CPM2022-61 LQE2022-69 pp.57-60 |
| CPM, ED, LQE | 2022-11-24 15:45 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Estimation of electrical characteristics of surface treatment after recess structure formation in AlGaN/GaN MIS-HEMTs Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech) ED2022-37 CPM2022-62 LQE2022-70 |
Degradation of electrical characteristics due to etching damage during recess structure formation has been an issue for ... [more] | ED2022-37 CPM2022-62 LQE2022-70 pp.61-64 |
| CPM, ED, LQE | 2022-11-24 16:05 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
AlGaN/GaN vertical devices on Si substrate with highly resistive strained layer superlattice Takaya Koike, Koki Hayashi, Ryosuke Hayafuji, Toshiharu Kubo, Takashi Egawa (NIT) ED2022-38 CPM2022-63 LQE2022-71 |
[more] | ED2022-38 CPM2022-63 LQE2022-71 pp.65-68 |
| CPM, ED, LQE | 2022-11-24 16:25 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Effects of AlN/AlGaN interfacial control layers in AlN/AlGaN/GaN MIS devices Yuchen Deng, Hibiki Anaba, Hideyuki Matsuyama, Toshi-kazu Suzuki (JAIST) ED2022-39 CPM2022-64 LQE2022-72 |
[more] | ED2022-39 CPM2022-64 LQE2022-72 pp.69-72 |
| CPM, ED, LQE | 2022-11-25 10:35 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
[Encouragement Talk]
Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2022-40 CPM2022-65 LQE2022-73 |
The carrier dynamics in active layers of III-nitride-based optical devices, has not been fully understood, yet. We belie... [more] | ED2022-40 CPM2022-65 LQE2022-73 pp.73-76 |
| CPM, ED, LQE | 2022-11-25 11:05 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Simulation of exciton dynamics of III-nitrides and experimental analysis
-- Effects of phonons and dependence on temperature -- Masaya Chizaki, Kensuke Oki, Yoshihiro Ishitani (Chiba Univ.) ED2022-41 CPM2022-66 LQE2022-74 |
The radiative lifetime of exciton is dominated by the population distribution among its principal quantum number states.... [more] | ED2022-41 CPM2022-66 LQE2022-74 pp.77-80 |
| CPM, ED, LQE | 2022-11-25 11:25 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Growth temperature dependence of semipolar {11-22} AlInN/GaInN Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.) ED2022-42 CPM2022-67 LQE2022-75 |
AlInN alloys are promising materials for GaN-based electronic and optical devices. In this study, AlInN layers with a th... [more] | ED2022-42 CPM2022-67 LQE2022-75 pp.81-84 |
| CPM, ED, LQE | 2022-11-25 13:00 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2022-43 CPM2022-68 LQE2022-76 |
Multiwavelength light emitters composed of InGaN-based microstructures without phosphors impact various fields such as s... [more] | ED2022-43 CPM2022-68 LQE2022-76 pp.85-88 |
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