| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2015)
Search Results: Keywords 'from:2015-06-19 to:2015-06-19'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2015-06-19 09:30 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Interface states characterization of Al2O3/AlGaN/GaN structures Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.)  SDM2015-38 |
To characterize interface properties of Al2O3-insulated gates on AlGaN/GaN structures with and without (w/o) ICP etching... [more] | SDM2015-38 pp.1-4 |
| SDM | 2015-06-19 09:50 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy Yutaka Tokuda (Aich Inst. of Technol.) SDM2015-39 |
Capacitance transient spectroscopy based on the depletion layer capacitance transients resulting from carrier emission f... [more] | SDM2015-39 pp.5-10 |
| SDM | 2015-06-19 10:10 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Al2O3/Ga2O3 interface structure and its surface orientation dependence Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) SDM2015-40 |
The interface state densities (Dit) of Al2O3/n-Ga2O3 (010) and Al2O3/n-Ga2O3 ("2" ̅01) were evaluated with Hi-Lo C... [more] | SDM2015-40 pp.11-16 |
| SDM | 2015-06-19 10:50 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions Muentaka Noguchi, Toshiaki Iwamatsu, Naruhisa Miura, Shuhei Nakata, Satoshi Yamakawa (Mitsubishi Electric) SDM2015-41 |
SiliconCarbide (SiC) have different poly-types, which shows various energy bandgap. This suggests the possibility of SiC... [more] | SDM2015-41 pp.17-20 |
| SDM | 2015-06-19 11:10 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC Daisuke Mori, Kei Inoue, Hideaki Teranishi, Takayuki Hirose, Aki Takigawa (Fuji Electric) SDM2015-42 |
The chemical bonding states of Si and N at nitrided SiC/SiO2 interface were characterized by synchrotron radiation X-ray... [more] | SDM2015-42 pp.21-26 |
| SDM | 2015-06-19 11:30 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-43 |
We have investigated the effect of NO-annealing for SiO2/4H-SiC interface properties. The electrical properties of the N... [more] | SDM2015-43 pp.27-30 |
| SDM | 2015-06-19 12:40 |
Aichi | VBL, Nagoya Univ. | Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally grown SiO2/4H-SiC Structure Hiromasa Watanabe, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ) SDM2015-44 |
[more] | SDM2015-44 pp.31-35 |
| SDM | 2015-06-19 13:00 |
Aichi | VBL, Nagoya Univ. | First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45 |
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] | SDM2015-45 pp.37-40 |
| SDM | 2015-06-19 13:20 |
Aichi | VBL, Nagoya Univ. | Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2015-46 |
We have studied the formation of Ti Nanodots (NDs) by remote-H2 plasma treatment and an impact of Ti-NDs embedding into ... [more] | SDM2015-46 pp.41-45 |
| SDM | 2015-06-19 13:40 |
Aichi | VBL, Nagoya Univ. | Fabrication of PtGe/Ge contacts with low hole barrier and its application to metal source/drain Ge p-channel MOSFETs Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2015-47 |
The fabrication of PtGe/Ge contacts with low hole barrier height (ΦBP) and its electrical passivation were investigated.... [more] | SDM2015-47 pp.47-50 |
| SDM | 2015-06-19 14:15 |
Aichi | VBL, Nagoya Univ. | Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2015-48 |
Besides low solubility and activation rate of n-type dopant in Ge, Fermi level pinning (FLP) at metal/Ge interface leads... [more] | SDM2015-48 pp.51-55 |
| SDM | 2015-06-19 14:35 |
Aichi | VBL, Nagoya Univ. | Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer Akihiro Suzuki, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-49 |
In order to realize high-performance Ge-channel CMOS, it is essential to reduce contact resistance at metal/Ge interface... [more] | SDM2015-49 pp.57-61 |
| SDM | 2015-06-19 14:55 |
Aichi | VBL, Nagoya Univ. | Effect of annealing on defects in Ge1-xSnx epitaxial layers Takanori Asano, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-50 |
In order to control the carrier concentration in Ge1-xSnx epitaxial layer, it is important to understand and control def... [more] | SDM2015-50 pp.63-68 |
| SDM | 2015-06-19 15:15 |
Aichi | VBL, Nagoya Univ. | Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51 |
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] | SDM2015-51 pp.69-73 |
| SDM | 2015-06-19 15:50 |
Aichi | VBL, Nagoya Univ. | Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2015-52 |
a-InGaZnO based non-volatile memories were fabricated as resistive random access memory (ReRAM) for use in System on Pan... [more] | SDM2015-52 pp.75-80 |
| SDM | 2015-06-19 16:10 |
Aichi | VBL, Nagoya Univ. | Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2015-53 |
The electrical properties of wafer-bonded germanium (001)-on-insulator (Ge (001)-OI) substrates with Al2O3/SiO2 hybrid b... [more] | SDM2015-53 pp.81-86 |
| SDM | 2015-06-19 16:30 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Bandgap opening and electrode contact resistances in bilayer graphene field-effect transistors Ryo Nouchi (Osaka Pref. Univ.) SDM2015-54 |
A bandgap is opened in bilayer graphene (BLG) by introducing a potential difference between the two graphene layers, rai... [more] | SDM2015-54 pp.87-92 |
| SDM | 2015-06-19 16:50 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Electrostatically-controllable polarity of transistors on atomically-thin films Shu Nakaharai (NIMS), Tomohiko Iijima, Shinichi Ogawa, Katsunori Yagi, Naoki Harada, Kenjiro Hayashi, Daiyu Kondo, Makoto Takahashi (AIST), Songlin Li, Mahito Yamamoto, Yen-Fu Lin (NIMS), Keiji Ueno (Saitama Univ.), Kazuhito Tsukagoshi (NIMS), Shintaro Sato, Naoki Yokoyama (AIST) SDM2015-55 |
We report our recent works on our novel concept transistors on atomically-thin films graphene and similar semiconductors... [more] | SDM2015-55 pp.93-98 |
| SDM | 2015-06-19 17:10 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Fabrication and Characterization of MoS2 MOSFET with High-k/Metal Gate Takahiro Mori (AIST), Naruki Ninomiya (YNU), Noriyuki Uchida, Toshitaka Kubo (AIST), Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama (NIMS), Masatoshi Tanaka (YNU), Atsushi Ando (AIST) SDM2015-56 |
We report the device fabrication and characterization of the high-k/metal gate MoS2 MOSFETs. To investigate the scatteri... [more] | SDM2015-56 pp.99-103 |
[Return to Top Page]