Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2018-11-08 09:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
SISPAD 2018 Review Kenichiro Sonoda (Renesas Electronics) SDM2018-64 |
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) was held on September 24-26,... [more] |
SDM2018-64 pp.1-6 |
SDM |
2018-11-08 10:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Development and Education of Electron Devices assisted with Computer Simulation Ken Uchida (Univ. of Tokyo), Takahisa Tanaka (Keio Univ.) SDM2018-65 |
To develop nano-scale electronic devices, computer simulations in which quantum mechanical effects and detailed band str... [more] |
SDM2018-65 pp.7-10 |
SDM |
2018-11-08 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] |
SDM2018-66 pp.11-16 |
SDM |
2018-11-08 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Device Simulation of Reliability for Advanced Semiconductor Devices Takamitsu Ishihara, Kazuya Matsuzawa, Takeshi Naito, Sadayuki Yoshitomi (TMC) SDM2018-67 |
[more] |
SDM2018-67 pp.17-22 |
SDM |
2018-11-08 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Development of the evaluation method of the strength of polycrystalline materials based on the order of atom arrangement and its application to the strength evaluation of electroplated copper thin films Ken Suzuki, Yifan Luo, Hideo Miura (Tohoku Univ.) SDM2018-68 |
[more] |
SDM2018-68 pp.23-26 |
SDM |
2018-11-08 15:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
High Resolution CMOS Ion Image Sensors and Its Application for Biomedical Fields Kazuaki Sawada, YouNa Lee, Yasuyuki Kimura, Tatsuya Iwata, Kazuhiro Takahashi, Toshiaki Hattori (Toyohashi Tech.) SDM2018-69 |
[more] |
SDM2018-69 pp.27-28 |
SDM |
2018-11-09 09:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Topography Simulation of Trench-Filling Growth of 4H-SiC Kazuhiro Mochizuki, Shiyang Ji, Ryoji Kosugi, Yoshiyuki Yonezawa, Hajime Okumura (AIST) SDM2018-70 |
A topography-simulation model is proposed to simulate chemical-vapor-deposition (CVD) trench filling for 4H-SiC superjun... [more] |
SDM2018-70 pp.29-34 |
SDM |
2018-11-09 10:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Modeling of Electron Transport in 4H-SiC MOS Inversion Layers Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2018-71 |
We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simul... [more] |
SDM2018-71 pp.35-40 |
SDM |
2018-11-09 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Analysis of Charge Transport in Amorphous Organic Thin Films Hironori Kaji (Kyoto Univ.) SDM2018-72 |
[more] |
SDM2018-72 pp.41-42 |
SDM |
2018-11-09 13:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Review of Recent Sensor Devices Research based on Semiconductor Technologies
-- With Review of SISPAD 2017 Workshop2: "Technologies for Sensor Devices" -- Shigeyasu Uno (Ritsumeikan Univ.) SDM2018-73 |
An overview of recent sensor device research activities based on the semiconductor technologies will be given with a rev... [more] |
SDM2018-73 pp.43-46 |
SDM |
2018-11-09 14:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74 |
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] |
SDM2018-74 pp.47-52 |
SDM |
2018-11-09 15:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Study of new stacked type logic circuit scheme with fabrication technology of 3D flash memory. Fumiya Suzuki, Sigeyoshi Watanabe (Shonan Inst. of Tech) SDM2018-75 |
[more] |
SDM2018-75 pp.53-57 |
SDM |
2018-11-09 15:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-76 |
In order to utilize the Radio Frequency (RF) signal power existing in the living environment, a RF rectifier that realiz... [more] |
SDM2018-76 pp.59-64 |