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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2019)
Search Results: Keywords 'from:2019-10-23 to:2019-10-23'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2019-10-23 13:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Atomic layer etching process utilizing plasma Sho Kumakura, Yoshihide Kihara, Masanobu Honda (Tokyo Electron Miyagi)  SDM2019-53 |
(To be available after the conference date) [more] | SDM2019-53 pp.1-6 |
| SDM | 2019-10-23 14:20 |
Miyagi | Niche, Tohoku Univ. | A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-54 |
In this study, we investigated suppression of SiO2 interfacial layer formation by introducing Hf interlayer to realize t... [more] | SDM2019-54 pp.7-10 |
| SDM | 2019-10-23 14:50 |
Miyagi | Niche, Tohoku Univ. | The investigation of interface property of N-doped LaB6/SiO2/Si(100) stack structure by increasing deposition temperature Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-55 |
[more] | SDM2019-55 pp.11-15 |
| SDM | 2019-10-23 15:40 |
Miyagi | Niche, Tohoku Univ. | Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-56 |
In this study, post metallization annealing (PMA) for the ferroelectric undoped HfO2 deposited on Si(100) was investigat... [more] | SDM2019-56 pp.17-20 |
| SDM | 2019-10-23 16:10 |
Miyagi | Niche, Tohoku Univ. | A study on the EOT scaling of the Hf-based MONOS non-volatile memory characteristics utilizing HfON tunneling layer Jooyoung Pyo, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-57 |
[more] | SDM2019-57 pp.21-24 |
| SDM | 2019-10-23 16:40 |
Miyagi | Niche, Tohoku Univ. | Investigation of the multi-level operation of Hf-based MONOS nonvolatile memory utilizing multi charge trapping layers Yusuke Horiuchi, Jooyoung Pyo, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-58 |
[more] | SDM2019-58 pp.25-28 |
| SDM | 2019-10-24 09:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
NiAl as Cu alternative for ultrasmall feature sizes Linghan Chen, Junichi Koike, Daisuke Ando, Yuji Sutou (Tohoku Univ.) SDM2019-59 |
Conventional Cu interconnect will suffer from a great line resistivity increase due to aggressive downscaling of the dim... [more] | SDM2019-59 pp.29-33 |
| SDM | 2019-10-24 10:20 |
Miyagi | Niche, Tohoku Univ. | [Invited Lecture]
Effect of an oxide layer at Co/Si interface on Schottky barrier height and contact resistivity Koichi Kido, Ken Sato, Rihito Kuroda, Daisuke Ando, Yuji Suto, Junichi Koike (Tohoku Univ.) SDM2019-60 |
[more] | SDM2019-60 pp.35-38 |
| SDM | 2019-10-24 10:50 |
Miyagi | Niche, Tohoku Univ. | Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications Rengie Mark D. Mailig, Yuichiro Aruga, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-61 |
In this report, the effects of the TiN encapsulating layer on the low temperature formation of the PdErSi/Si(100) with d... [more] | SDM2019-61 pp.39-43 |
| SDM | 2019-10-24 13:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Random nanostructure formation and electric readout for nano-artifact metrics Seiya Kasai, Renpeng Lu, Katsumi Shimizu, Xiang Yin (Hokkaido Univ.), Yosuke Ueba, Mikio Ishikawa, Mitsuru Kitamura (DNP), Morihisa Hoga (AIST), Makoto Naruse (Univ. of Tokyo), Tsutomu Matsumoto (YNU) SDM2019-62 |
We introduce a basic concept of nano-artifact metrics, expected to be a highly secure authentication technique using nan... [more] | SDM2019-62 pp.45-50 |
| SDM | 2019-10-24 13:50 |
Miyagi | Niche, Tohoku Univ. | The process technology of new piezoelectric materials BiFeO3 and dependence of substrate Fuminobu Imaizumi, Rikuto Nakada (NIT, Oyama College) SDM2019-63 |
Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroe... [more] | SDM2019-63 pp.51-54 |
| SDM | 2019-10-24 14:20 |
Miyagi | Niche, Tohoku Univ. | SDM2019-64 |
(To be available after the conference date) [more] | SDM2019-64 pp.55-58 |
| SDM | 2019-10-24 15:10 |
Miyagi | Niche, Tohoku Univ. | Resistance Measurement Platform for Statistical Evaluation of Emerging Memory Materials with High Accuracy Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2019-65 |
A high precision 1 Ω – 10 MΩ range resistance measurement platform is presented. The developed platform excludes on-resi... [more] | SDM2019-65 pp.59-64 |
| SDM | 2019-10-24 15:40 |
Miyagi | Niche, Tohoku Univ. | Gas concentration distribution measurement in semiconductor process chamber using a high SNR CMOS absorption image sensor Keigo Takahashi, Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Yasuyuki Fujihara, Maasa Murata, Hidekazu Ishii, Tatsuo Morimoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) SDM2019-66 |
This paper reports on gas concentration imaging using lateral overflow integration trench capacitor(LOFITreC) CMOS absor... [more] | SDM2019-66 pp.65-68 |
| SDM | 2019-10-24 16:10 |
Miyagi | Niche, Tohoku Univ. | Observation of Fluctuation of Magnetron Sputtering Plasmas Using High-speed Video Camera Shintaro Yamazaki, Tetsuya Goto, Manabu Suzuki, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) SDM2019-67 |
[more] | SDM2019-67 pp.69-72 |
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