Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2011-02-07 10:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Keynote Address]
Technical Challenges for 3D Packaging and Chip Package Interaction Yasumitsu Orii, Kazushige Toriyama, Akihiro Horibe, Keiji Matsumoto, Katsuyuki Sakumai (IBM Japan) SDM2010-216 |
[more] |
SDM2010-216 pp.1-6 |
SDM |
2011-02-07 10:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Path-finding for Integration of Robust Low-k (k-2.5) SiOCH in System LSI Naoya Inoue, Makoto Ueki, Hironori Yamamoto, Ippei Kume, Jun Kawahara, Manabu Iguchi, Hirokazu Honda, Yoshitaka Horikoshi, Yoshihiro Hayashi (Renesas Electronics Corp.) SDM2010-217 |
Impacts of k-value reduction on LSI performances are clarified quantitatively using 2M-gate net-list. Reduction in k-val... [more] |
SDM2010-217 pp.7-12 |
SDM |
2011-02-07 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Application of Compliant Bump Technology to Image Sensor Naoya Watanabe, Tanemasa Asano (Kyushu Univ.) SDM2010-218 |
[more] |
SDM2010-218 pp.13-18 |
SDM |
2011-02-07 12:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A highly reliable Cu interconnect with CuSiN and Ti-based barrier metal: Impact of oxgen surface treatment Yumi Hayashi, Noriaki Matsunaga, Makoto Wada, Shinichi Nakao, Kei Watanabe, Satoshi Kato, Atsuko Sakata, Akihiro Kajita, Hideki Shibata (Toshiba Corp.) SDM2010-219 |
A trade-off property of CuSiN between EM improvement and line resistance increase was resolved by a breakthrough that le... [more] |
SDM2010-219 pp.19-23 |
SDM |
2011-02-07 13:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Networked nanographite growth using photoemission-assisted enhanced plasma CVD: discharge condition dependence of the crystallographic quality Shuichi Ogawa (Tohoku Univ./JST), Motonobu Sato (Fujitsu/JST), Haruki Sumi (Tohoku Univ.), Mizuhisa Nihei (Fujitsu/JST), Yuji Takakuwa (Tohoku Univ./JST) SDM2010-220 |
he photoemission-assisted plasma chemical vapor deposition has been developed to form the graphene for large area withou... [more] |
SDM2010-220 pp.25-30 |
SDM |
2011-02-07 13:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Dependence of Ti-Based Self-Formed Barrier Structure on Dielectric-Layer Composition Kazuyuki Kohama, Kazuhiro Ito, Yutaka Sonobayashi (Kyoto Univ.), Kazuyuki Ohmori, Kenichi Mori, Kazuyoshi Maekawa (Renesas), Yasuharu Shirai (Kyoto Univ.), Masanori Murakami (The Ritsumeikan) SDM2010-221 |
Ti-based self-formed barrier layer using Cu(Ti) alloy seed applied to 45 nm-node dual-damascene interconnects was report... [more] |
SDM2010-221 pp.31-35 |
SDM |
2011-02-07 14:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Networked-Nanographite Wire Grown by Metal-Photoemission-assisted Plasma-enhanced CVD without Catalysts Motonobu Sato (Fujitsu Ltd./JST/AIST), Shuichi Ogawa (Tohoku Univ./JST), Eiji Ikenaga (JASRI/JST), Yuji Takakuwa (Tohoku Univ./JST), Mizuhisa Nihei (Fujitsu Ltd./JST/AIST), Naoki Yokoyama (AIST) SDM2010-222 |
Carbon-based materials, such as carbon nanotubes and graphene nanoribbons, have been studied as interconnect materials b... [more] |
SDM2010-222 pp.37-42 |
SDM |
2011-02-07 14:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Stress Mapping in Thinned Si Wafer with Cu-TSV and Cu-Sn Microbumps Murugesan Mariappan, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (Tohoku Univ.) SDM2010-223 |
[more] |
SDM2010-223 pp.43-47 |
SDM |
2011-02-07 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Development of Low Temperature Bump-less TSV Process in 3D Stacking Technology Hideki Kitada, Nobuhide Maeda (The Univ. of Tokyo), Koji Fujimoto (Dai Nippon Printing), Yoriko Mizushima, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Laboratories Ltd.), Takayuki Ohba (The Univ. of Tokyo) SDM2010-224 |
Diffusion behavior of Cu in Cu through-silicon-vias (TSVs) fabricated using low-temperature plasma enhanced chemical vap... [more] |
SDM2010-224 pp.49-53 |
SDM |
2011-02-07 15:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Highly hermetic barrier Low-k SiC (k<3.5) by using new precursor Tatsuya Usami, Chikako Kobayashi, Yukio Miura (Renesas), Shuji Nagano (Taiyo-Nippon Sanso), Koichi Ohto (Renesas), Hideharu Shimizu (Taiyo-Nippon Sanso), Takeshi Kada, Tatsuya Ohira (Tri Chemical Lab. Inc.), Kunihiro Fujii (Renesas) SDM2010-225 |
(To be available after the conference date) [more] |
SDM2010-225 pp.55-58 |
SDM |
2011-02-07 16:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Highly Manufacturable ELK Integration Technology with Metal Hard Mask Process for High Performance 32nm-node Interconnect and Beyond S. Matsumoto, T. Harada, Y. Morinaga, D. Inagaki, J. Shibata, K. Tashiro, T. Kabe, Akihisa Iwasaki, S. Hirao, M. Tsutsue, K. Nomura, K. Seo, T. Hinomura, Naoki Torazawa, S. Suzuki (Panasonic) SDM2010-226 |
High performance 32nm-node interconnect with ELK (Extremely Low-k, k=2.4) has been demonstrated. The two main key techno... [more] |
SDM2010-226 pp.59-63 |