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Technical Committee on Silicon Device and Materials (SDM)  (Searched in: 2010)

Search Results: Keywords 'from:2011-02-07 to:2011-02-07'

[Go to Official SDM Homepage (Japanese)] 
Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2011-02-07
10:05
Tokyo Kikai-Shinko-Kaikan Bldg. [Keynote Address] Technical Challenges for 3D Packaging and Chip Package Interaction
Yasumitsu Orii, Kazushige Toriyama, Akihiro Horibe, Keiji Matsumoto, Katsuyuki Sakumai (IBM Japan) SDM2010-216
 [more] SDM2010-216
pp.1-6
SDM 2011-02-07
10:50
Tokyo Kikai-Shinko-Kaikan Bldg. Path-finding for Integration of Robust Low-k (k-2.5) SiOCH in System LSI
Naoya Inoue, Makoto Ueki, Hironori Yamamoto, Ippei Kume, Jun Kawahara, Manabu Iguchi, Hirokazu Honda, Yoshitaka Horikoshi, Yoshihiro Hayashi (Renesas Electronics Corp.) SDM2010-217
Impacts of k-value reduction on LSI performances are clarified quantitatively using 2M-gate net-list. Reduction in k-val... [more] SDM2010-217
pp.7-12
SDM 2011-02-07
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. Application of Compliant Bump Technology to Image Sensor
Naoya Watanabe, Tanemasa Asano (Kyushu Univ.) SDM2010-218
 [more] SDM2010-218
pp.13-18
SDM 2011-02-07
12:40
Tokyo Kikai-Shinko-Kaikan Bldg. A highly reliable Cu interconnect with CuSiN and Ti-based barrier metal: Impact of oxgen surface treatment
Yumi Hayashi, Noriaki Matsunaga, Makoto Wada, Shinichi Nakao, Kei Watanabe, Satoshi Kato, Atsuko Sakata, Akihiro Kajita, Hideki Shibata (Toshiba Corp.) SDM2010-219
A trade-off property of CuSiN between EM improvement and line resistance increase was resolved by a breakthrough that le... [more] SDM2010-219
pp.19-23
SDM 2011-02-07
13:10
Tokyo Kikai-Shinko-Kaikan Bldg. Networked nanographite growth using photoemission-assisted enhanced plasma CVD: discharge condition dependence of the crystallographic quality
Shuichi Ogawa (Tohoku Univ./JST), Motonobu Sato (Fujitsu/JST), Haruki Sumi (Tohoku Univ.), Mizuhisa Nihei (Fujitsu/JST), Yuji Takakuwa (Tohoku Univ./JST) SDM2010-220
he photoemission-assisted plasma chemical vapor deposition has been developed to form the graphene for large area withou... [more] SDM2010-220
pp.25-30
SDM 2011-02-07
13:40
Tokyo Kikai-Shinko-Kaikan Bldg. Dependence of Ti-Based Self-Formed Barrier Structure on Dielectric-Layer Composition
Kazuyuki Kohama, Kazuhiro Ito, Yutaka Sonobayashi (Kyoto Univ.), Kazuyuki Ohmori, Kenichi Mori, Kazuyoshi Maekawa (Renesas), Yasuharu Shirai (Kyoto Univ.), Masanori Murakami (The Ritsumeikan) SDM2010-221
Ti-based self-formed barrier layer using Cu(Ti) alloy seed applied to 45 nm-node dual-damascene interconnects was report... [more] SDM2010-221
pp.31-35
SDM 2011-02-07
14:10
Tokyo Kikai-Shinko-Kaikan Bldg. Networked-Nanographite Wire Grown by Metal-Photoemission-assisted Plasma-enhanced CVD without Catalysts
Motonobu Sato (Fujitsu Ltd./JST/AIST), Shuichi Ogawa (Tohoku Univ./JST), Eiji Ikenaga (JASRI/JST), Yuji Takakuwa (Tohoku Univ./JST), Mizuhisa Nihei (Fujitsu Ltd./JST/AIST), Naoki Yokoyama (AIST) SDM2010-222
Carbon-based materials, such as carbon nanotubes and graphene nanoribbons, have been studied as interconnect materials b... [more] SDM2010-222
pp.37-42
SDM 2011-02-07
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. Stress Mapping in Thinned Si Wafer with Cu-TSV and Cu-Sn Microbumps
Murugesan Mariappan, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (Tohoku Univ.) SDM2010-223
 [more] SDM2010-223
pp.43-47
SDM 2011-02-07
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. Development of Low Temperature Bump-less TSV Process in 3D Stacking Technology
Hideki Kitada, Nobuhide Maeda (The Univ. of Tokyo), Koji Fujimoto (Dai Nippon Printing), Yoriko Mizushima, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Laboratories Ltd.), Takayuki Ohba (The Univ. of Tokyo) SDM2010-224
Diffusion behavior of Cu in Cu through-silicon-vias (TSVs) fabricated using low-temperature plasma enhanced chemical vap... [more] SDM2010-224
pp.49-53
SDM 2011-02-07
15:55
Tokyo Kikai-Shinko-Kaikan Bldg. Highly hermetic barrier Low-k SiC (k<3.5) by using new precursor
Tatsuya Usami, Chikako Kobayashi, Yukio Miura (Renesas), Shuji Nagano (Taiyo-Nippon Sanso), Koichi Ohto (Renesas), Hideharu Shimizu (Taiyo-Nippon Sanso), Takeshi Kada, Tatsuya Ohira (Tri Chemical Lab. Inc.), Kunihiro Fujii (Renesas) SDM2010-225
(To be available after the conference date) [more] SDM2010-225
pp.55-58
SDM 2011-02-07
16:25
Tokyo Kikai-Shinko-Kaikan Bldg. Highly Manufacturable ELK Integration Technology with Metal Hard Mask Process for High Performance 32nm-node Interconnect and Beyond
S. Matsumoto, T. Harada, Y. Morinaga, D. Inagaki, J. Shibata, K. Tashiro, T. Kabe, Akihisa Iwasaki, S. Hirao, M. Tsutsue, K. Nomura, K. Seo, T. Hinomura, Naoki Torazawa, S. Suzuki (Panasonic) SDM2010-226
High performance 32nm-node interconnect with ELK (Extremely Low-k, k=2.4) has been demonstrated. The two main key techno... [more] SDM2010-226
pp.59-63
 Results 1 - 11 of 11  /   
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