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Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Kiyoshi Ishii
Vice Chair Kiichi Kamimura
Secretary Toru Matsuura, Seiji Toyoda
Assistant Hidehiko Shimizu, Yasushi Takemura

Conference Date Mon, Aug 7, 2006 13:30 - 17:05
Tue, Aug 8, 2006 09:30 - 12:40
Topics Electronic Component Parts and Materials, etc. 
Conference Place Faculty of Engineering, Iwate University 
Address 4-3-5, Ueda, Morioka, Iwate 020-8550 JAPAN
Transportation Guide http://www.iwate-u.ac.jp/english/campusmap/index.html
Contact
Person
Faculty of Engineering, Iwate University, Prof. Osamu Michikami
019-621-6386

Mon, Aug 7 PM 
13:30 - 17:05
(1) 13:30-13:55 Ga content dependence of properties of ZnO:Ga thin film prepared on glass substrate by rf magnetron sputtering Norimitu Nasu, Hiroaki Hasebe, Kouichi Mutou, Shinji Kikuchi, Osamu Michikami (Iwate Univ.)
(2) 13:55-14:20 Growth of Ga doped ZnO films by RF sputterring in ambient Ar+H2 Kouichi Mutou, Norimitu Nasu, Hiroaki Hasebe, Osamu Michikami (Iwate Univ.)
(3) 14:20-14:45 ZnO thin film growth on Si(100) by MOCVD Hisao Wajima, Fumihiko Hirose (Yamagata Univ.)
(4) 14:45-15:10 Preparation and consideration of ZnO Thin Films Deposited by Sputter-Beam Deposition Method Toru Noguchi, Ayumu Kawakami, Akiyuki Higashide, Hidehiko Shimizu, Takeo Maruyama, Haruo Iwano, Takahiro Kawakami (Niigata Univ.), Yoichi Hoshi (T.P.U.)
  15:10-15:25 Break ( 15 min. )
(5) 15:25-15:50 Low temperature deposition of anatase poly TiO2 by chemical vapor deposition Fumihiko Hirose, Masashi Ito, Yu Matsushima (YU)
(6) 15:50-16:15 High Rate deposition of TiO2 thin films by plasma assisted electron beam evaporation Yoichi Hoshi, Shigetoshi Kawaguchi, Osamu Kamiya (Tokyo Polytechnic Univ.), Hidehiko Shimizu (Niigata Univ.)
(7) 16:15-16:40 Low temperature epitaxial growth of 3C-SiC on SOI substrate using Hot-Mesh CVD method Hitoshi Miura, Taishi Kurimoto, Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (Nagaoka Univ. of Tech.)
(8) 16:40-17:05 Growth of GaN on SiC/Si(111) substrates using AlN buffer layer by hot-mesh CVD method Kazuyuki Tamura, Yusuke Fukada, Yuichiro Kuroki, Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ. of Tech)
Tue, Aug 8 AM 
09:30 - 12:40
(9) 09:30-09:55 EuBa2Cu3O7-δ薄膜用CeO2バッファ層の厚膜化 Keita Kikuchi, Jun Sakuma, Satosi Husiwara, Yasuyuki Ota, Osamu Michikami (Iwate Univ.)
(10) 09:55-10:20 The control of the surface morphology of thick CeO2 buffer layer prepared by magnetron sputtering Yasuyuki Ota, Jun Sakuma, Yutaka Kimura, Hiroshi Mashiko, Osamu Michikami (Iwate Univ.)
(11) 10:20-10:45 Superconducting properties of EuBa2Cu3O7-d thin films grown on thick Sm2O3 buffer layers Yutaka Kimura, Yasuyuki Ota, Yuya Unuma, Osamu Michikami (Iwate Univ.)
(12) 10:45-11:10 The effect of heat treatment on a large sized superconducting thin film using the facing targets magnetron suputtering method Shingo Musashi, Iori Hayasaka, Kouya Takahashi, Osamu Michikami (Iwate Univ)
  11:10-11:25 Break ( 15 min. )
(13) 11:25-11:50 Deposition of Large-area SmBa2Cu3O7-δ films by Magnetron Sputtering with Facing Targets Koya Takahashi, Shingo Musashi, Yutaka Kimura, Shinji Kikuchi, Osamu Michikami (Iwate Univ.)
(14) 11:50-12:15 Electro-magnetic Wave Absorption Characteristics due to Structure of the Powder-Type Magnetic Wood(4) Koji Sato, Hideo Oka (Iwate Univ.), Yasuji Namizaki (Iwate Industrial Research Insti.)
(15) 12:15-12:40 A bowl-shaped left handed material lens Takakazu Yonezawa, Masahiro Daibo, Norio Tayama (Iwate Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address Hidehiko Shimizu (Niigata University)
TEL 025-262-6811, FAX 025-262-6811
E-: engi-u

Osamu Michikami (Iwate University)
TEL 019-621-6386, FAX 019-621-6393
E-: mi-u 


Last modified: 2006-05-30 18:52:58


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