|
|
| Chair |
|
Tetsu Kachi (Toyota Central R&D Labs.) |
| Vice Chair |
|
Naoki Hara (Fujitsu Labs.) |
| Secretary |
|
Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.) |
| Assistant |
|
Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.) |
|
| Conference Date |
Fri, Jul 29, 2011 13:30 - 17:25
Sat, Jul 30, 2011 09:00 - 15:35 |
| Topics |
TFT (organic,oxide), Semiconductor process (surface, interface, reliability), etc. |
| Conference Place |
|
Contact
Person |
Prof. Naotaka Uchitomi
+81-258-47-9505 |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Fri, Jul 29 PM
13:30 - 17:25 |
| (1) |
13:30-13:55 |
Effect of C and Si co-doping high resistivity GaN buffer layer on AlGaN/GaN HFETs  ED2011-37 |
Masayuki Fukai, Shusuke Kakizawa, Hiroshi Fushimi (New Japan Radio) |
| (2) |
13:55-14:20 |
Control of Interface Electric Charge by MIM Gate Structure on AlGaN/GaN HFETs ED2011-38 |
Yoshimichi Fukasawa, Eiji Waki, Hiroshi Fushimi (New Japan Radio) |
| (3) |
14:20-14:45 |
Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET ED2011-39 |
Hong-An Shih, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST) |
| (4) |
14:45-15:10 |
Characterization of MOS interfaces and current collapse in AlGaN/GaN HEMTs ED2011-40 |
Tamotsu Hashizume, Chihoko Mizue, Yujin Hori, Masafumi Tajima, Kota Ohi (Hokkaido Univ.) |
| |
15:10-15:20 |
Break ( 10 min. ) |
| (5) |
15:20-15:45 |
Deposition of Nb2O5 films by fiash boiling spray CVD ED2011-41 |
Koji Tominaga (HORIBA), Masanori Trasaka, Tetsuo Shimizu (STEC), Jiro Senda (Doshisha Univ.), Kozo Ishida (HORIBA) |
| (6) |
15:45-16:10 |
Effects of surface pre-treatments for AlN sputtering and Al2O3 atomic layer depositions on GaAs(001) ED2011-42 |
Masahiro Kudo, Hong-An Shih, Masashi Akabori, Toshi-kazu Suzuki (JAIST) |
| (7) |
16:10-16:35 |
Characterization of Low-Frequency Noise in SiNx Insulator-Gate GaAs Etched Nanowire FETs ED2011-43 |
Toru Muramatsu, Kensuke Miura, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.) |
| (8) |
16:35-17:00 |
Inductively coupled plasma etching of Al-rich AlGaAs for Photonic Crystal Fabrication ED2011-44 |
Yuta Kitabayashi, Masaya Mochizuki, Fumitaro Ishikawa, Masahiko Kondow (Osaka Univ.) |
| (9) |
17:00-17:25 |
Spring Characteristics of Circular Arc Shaped 3D Micro-cantilevers Fabricated Using III-V Semiconductor Strain-driven Bending Process ED2011-45 |
Hiuma Iwase, Jian Wang, Masashi Akabori, Syoji Yamada (JAIST) |
Sat, Jul 30 AM
09:00 - 15:35 |
| (10) |
09:00-09:25 |
Carrier injection kinetics of P3HT/n-Si heterojunction diodes ED2011-46 |
Sho Kaneko, Naoki Oyama, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) |
| (11) |
09:25-09:50 |
Characterization of organic solar cells made with MoO3 hole transport layers ED2011-47 |
Kazuki Yoshida, Akira Kurihara, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) |
| (12) |
09:50-10:15 |
Study of film formability and photovoltaic properties of highly soluble thiophene oligomers ED2011-48 |
Takahiko Suzuki, Kazuki Yoshida, Akira Kurihara, Kazumasa Ota, Kazuaki Sato, Yoshihiro Ohba, Fumihiko Hirose (Yamagata Univ.) |
| (13) |
10:15-10:40 |
Highly efficient dye-sensitized solar cells by dye adsorption method with high-temperature solvent ED2011-49 |
Akinobu Ishida, Hiroki Yoshida, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ) |
| (14) |
10:40-11:05 |
Formation of a titanium oxide nanotube film on a transparent conductive oxide layer by anodization ED2011-50 |
Ryota Kojima, Mohammad Maksudur Rahman, Mehdi El Fassy Fihry, Yasuo Kimura, Michio Niwano (RIEC, Tohoku Univ.) |
| |
11:05-11:15 |
Break ( 10 min. ) |
| (15) |
11:15-11:40 |
Analysis of a monolithic integrated rectenna for zero bias detection by using bow-tie antenna and triple-barrier resonant tunneling diode ED2011-51 |
Masahito Nakamura, Satoshi Takahagi, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.) |
| (16) |
11:40-12:05 |
Identification of a nonlinear equivalent circuit in triple-barrier resonant tunneling diodes by using the particle swarm optimization method ED2011-52 |
Kiyoto Asakawa, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Met. Univ.) |
| (17) |
12:05-12:30 |
Quantum-Corrected Monte Carlo Analysis of Strained InAs HEMTs ED2011-53 |
Jun Sato, Fumiharu Machida, Shinsuke Hara, Hiroki I. Fujishiro (TUS) |
| |
12:30-13:30 |
Lunch Break ( 60 min. ) |
| (18) |
13:30-13:55 |
Growth and characterization of GaSb film on Si(111) substrate using Sb template layer ED2011-54 |
Hideyuki Toyota, Akinari Okabe, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. Tech.) |
| (19) |
13:55-14:20 |
InSb MOS diodes on a Si(111) substrate grown by surface reconstruction ontrolled epitaxy ED2011-55 |
Azusa Kadoda, Tatsuya Iwasugi, Kimihiko Nakatani, Koji Nakayama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) |
| (20) |
14:20-14:45 |
Analysis of spin-polarized current using InSb/AlInSb resonant tunneling diodes ED2011-56 |
Masanari Fujita, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.) |
| (21) |
14:45-15:10 |
Sub-band structure and spin-orbit interaction analysis in two-dimensional electron gas bi-layer system in high In-content InGaAs/InAlAs hetero-structures ED2011-57 |
Masashi Akabori, Tomoyuki Katayama, Kosaku Moromoto, Hiuma Iwase, Syoji Yamada (CNMT JAIST) |
| (22) |
15:10-15:35 |
Anomalous Hall Effect in ZnSnAs2:Mn Epitaxial Film Gorwn on InP Substrates ED2011-58 |
Hiroto Oomae, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. Tech.) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Kunio Tsuda（Toshiba）
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E- :   o      ba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- :        t 
Tetsuzo Ueda（Panasonic)
TEL：+81-75-956-8273、FAX：+81-75-956-9110
E-：   zo pa  c
Seiya Kasai (Hokkaido Univ.)
TEL：011-706-6509、FAX：011-716-6004
E-：  irciqe i |
Last modified: 2011-05-23 11:55:57
|
Notification: Mail addresses are partially hidden against SPAM.
|