|
|
| Chair |
|
Koichi Maezawa (Univ. of Toyama) |
| Vice Chair |
|
Kunio Tsuda (Toshiba) |
| Secretary |
|
Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST) |
| Assistant |
|
Manabu Arai (New JRC), Masataka Higashiwaki (NICT) |
|
| Conference Date |
Sat, Jul 23, 2016 14:00 - 16:20
Sun, Jul 24, 2016 09:30 - 11:50 |
| Topics |
Semiconductor Processes and Devices |
| Conference Place |
Tokyo Metropolitan Univ. Minami-Osawa Campus, International House |
| Address |
1-1 Minami-Osawa, Hachioji-shi, Tokyo, Japan 192-0397 |
| Transportation Guide |
http://www.tmu.ac.jp/english/university/campusmap.html |
Contact
Person |
Prof. Michihiko Suhara |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Sat, Jul 23 PM
14:00 - 14:50 |
| (1) |
14:00-14:25 |
Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor  ED2016-27 |
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin (Fujitsu Lab.) |
| (2) |
14:25-14:50 |
Lorentzian low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor devices ED2016-28 |
Toshi-kazu Suzuki, Son Phuong Le, Toshimasa Ui, Tuan Quy Nguyen, Hong-An Shih (JAIST) |
| |
14:50-15:05 |
Break ( 15 min. ) |
Sat, Jul 23 PM
15:05 - 16:20 |
| (3) |
15:05-15:30 |
Effects of post-deposition anneal on SiO2 layer on Ga2O3 ED2016-29 |
Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) |
| (4) |
15:30-15:55 |
p-Cu2O/AlOx/n-SiC/n-Si Structured Nonvolatile pn Memory Diode with Low-Switching Voltage ED2016-30 |
Misa Tsuchiya, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.) |
| (5) |
15:55-16:20 |
Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate ED2016-31 |
Takaaki Mitsueda, Masayuki Mori, Koichi Maezawa (Univ. Toyama) |
Sun, Jul 24 AM
09:30 - 11:50 |
| (6) |
09:30-09:55 |
Resonant interactions in nonlinear metamaterial transmission lines ED2016-32 |
Koichi Narahara (KAIT) |
| (7) |
09:55-10:20 |
Hole-Tunneling Si1-xGex/Si DQW RTD with High Resonant Current ED2016-33 |
Ayaka Shinkawa, Minoru Wakiya, Yuki Maeda, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.) |
| (8) |
10:20-10:45 |
Room temperature negative differential resistance of CaF2/Si/CaF2 resonant tunneling diode ED2016-34 |
Naoyuki Tanabe, Satoshi Shimanaka, Keita Suda, Masahiro Watanabe (Tokyo Tech) |
| |
10:45-11:00 |
Break ( 15 min. ) |
| (9) |
11:00-11:25 |
Resonant-Tunneling-Diode Terahertz Oscillator Integrated with Radial Line Slot Antennas for Circularly Polarized Wave Radiation ED2016-35 |
Daisuke Horikawa, Safumi Suzuki, Masahiro Asada (Tokyo Tech) |
| (10) |
11:25-11:50 |
Analysis of terahertz detection characteristics of a rectenna integrated with a semiconductor mesa ED2016-36 |
Takemi Tokuoka, Michihiko Suhara (TMU) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Koji Matsunaga（NEC)
TEL：+81-44-435-8348 FAX：+81-44-455-8253
E- ： k-     fp   c
Toshikazu Suzuki (JAIST)
TEL : +81-761-51-1441 Fax : +81-761-51-1455
E- :  si  jaist |
Last modified: 2016-07-06 11:16:01
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