|
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| Chair |
|
Kiyoshi Ishii |
| Vice Chair |
|
Kiichi Kamimura |
| Secretary |
|
Yoshitaka Kitamoto, Toru Matsuura |
| Assistant |
|
Hidehiko Shimizu, Seiji Toyoda |
|
| Conference Date |
Fri, Nov 11, 2005 13:30 - 17:30
Sat, Nov 12, 2005 09:00 - 13:25 |
| Topics |
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| Conference Place |
Bunkyo Campus, University of Fukui |
| Address |
3-9-1, Bunkyo, Fukui-shi, 910-8507, Japan |
| Transportation Guide |
http://www.fukui-u.ac.jp/NewHP1002/map/campus.htm |
Contact
Person |
Prof. Akio Yamamoto
0776-27-8566 |
Fri, Nov 11
13:30 - 17:30 |
| (1) |
13:30-13:55 |
Thermal Strain and Temperature Coefficient of Resistance (TCR) of NiCr Thin Films Deposited by Sputtering |
Satoshi Iwatsubo, Takaaki Shimizu (Toyama Industrial Techonogy Center), Ken Tsubata, Daisuke Kuwahara (HDK), Katsumi Tanino (Toyama Industrial Techonogy Center) |
| (2) |
13:55-14:20 |
CZTS thin film solar cells using co-sputtered precursors |
Ryouichi Kimura, Kazuo Jimbo, Tsuyoshi Kamimura, Satoru Yamada, Win Shwe Maw, Hironori Katagiri (Nagaoka National College of Tech.) |
| (3) |
14:20-14:45 |
Crystal growth of Cu2ZnSnS4 by melting method |
Toshiro Shimada, Koichiro Oishi, Kazuo Jimbo, Hironori Katagiri, Hideaki Araki, Osamu Yoshida, Makoto Yamazaki (Nagaoka National College of Tech.), Satoshi Kobayashi, Nozomu Tsuboi (Niigata Univ.) |
| (4) |
14:45-15:10 |
Changes of surface structures during reactions of monomethylgermane on Si(001)
-- Toward to fabrication of Ge embedded in SiC structure -- |
Masayuki Harashima, Tetsushi Kanemaru, Ariyuki Kato, Tomoaki Ogiwara, Kanji Yasui, Tadashi Akahane, Masasuke Takata (Nagaoka Univ. of Technol.) |
| (5) |
15:10-15:35 |
Characterization of insulating nitride films grown on 6H-SiC by plasma nitridation method |
Tetsuo Yamaguchi, YingShen Liu, Yoshiki Ishida, Tomohiko Yamakami, Rinpei Hayashibe, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.) |
| |
15:35-15:50 |
Break ( 15 min. ) |
| (6) |
15:50-16:15 |
Preparation and Magnetic Properties of Hexagonal Ferrite Dot Arry |
Akimitsu Morisako, Xiaoxi Liu (Shinshu Univ.) |
| (7) |
16:15-16:40 |
Fabrication of Bi-2212 stacks by self-planarizing process |
Mitsuo Suzuki, Ruttanut Fachamroon, Naomi Yokawa, Kumi Okanoue, Katsuyoshi Hamasaki (Nagaoka Univ. of Tech.) |
| (8) |
16:40-17:05 |
Characterization of the surface layer on high-Tc superconducting Bi2Sr2CaCu2Ox single crystal modified with dilute hydrohloric asid |
Naomi Yokawa, Takashi Yoshida, Kumi Okanoue, Hisayuki Suematsu, Katsuyoshi Hamasaki (Nagaoka Univ. of Tech.), Takeshi Terajima, Hiroya Abe (JWRI, Osaka Univ.) |
| (9) |
17:05-17:30 |
Temperature dependence of stacked Bi-2212 Josephson device |
Ruttanut Fachamroon, Mitsuo Suzuki, Naomi Yokawa, Kumi Okanoue, Katsuyoshi Hamasaki (Nagaoka Univ. of Tech.) |
Sat, Nov 12
09:00 - 13:25 |
| (1) |
09:00-09:25 |
KOH etching effects of GaN buffer in MOVPE growth of InN on sapphire substrate |
Yasuhiko Nagai, Hiroshi Miwa, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) |
| (2) |
09:25-09:50 |
Growth and Characterization of MOVPE InN Films on Bulk GaN Substrate |
Wen-Jun Wang, Hiroshi Miwa, Yasuhiko Nagai, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) |
| (3) |
09:50-10:15 |
Photocatalytic H2S decomposition by InN1-xOx films grown by ArF laser-assisted MOCVD |
Masayoshi Miyanishi (Univ. of Fukui), Naoya Takahashi (Fukui NCT), Takahiro Kobayashi (Univ. of Fukui), Katsumi Takayama (Fukui NCT), Yukio Nambo (Nicca), Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) |
| (4) |
10:15-10:40 |
MOVPE growth of high-quality InN on 3c-SiC/Si template |
Myung Soo Cho, Takahiro Kobayashi, Naoki Sawazaki, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Yoshifumi Ito (Wakasa-wan Energy Research Center) |
| (5) |
10:40-11:05 |
MOVPE growth of GaN on 3c-SiC/Si template
-- Nitridation effects of template surface -- |
Naoki Sawazaki, Takahiro Kobayashi, Myung Soo Cho, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Yoshifumi Ito (Wakasa-wan Energy Research Center) |
| |
11:05-11:20 |
Break ( 15 min. ) |
| (6) |
11:20-11:45 |
Preparation of ZnS Thin Films by Chemical Bath Method
-- Effects of Adding Hydrazine Monohydrate -- |
Masakazu Hiruta, Satoshi Kobayashi, Nozomu Tsuboi, Futao Kaneko (Niigata Univ.) |
| (7) |
11:45-12:10 |
Investigations of the structural deformations in Si/SiGe films by AFM and HRXRD |
Shuqi Zheng, M. Kawashima, Masayuki Mori, Toyokazu Tambo, C. Tatsuyama (Toyama Univ.) |
| (8) |
12:10-12:35 |
Investigation of sputter-deposition process in pulse sputtering |
Yoichi Hoshi (Tokyo Polytchinic Univ.), Yuji Kuniyoshi (Tokyo Polytechinic Univ.), Osamu Kamiya (Canon Inc.), Hidehiko Shimizu (Niigata Univ.) |
| (9) |
12:35-13:00 |
Examination And Preparation of YBCO Thin Film by Low Voltage Sputtering Method |
Yoshimasa Okada, Hidehiko Shimizu, Takasi Mori, Haruo Iwano, Takahiro Kawakami (Niigata Univ.), Yoichi Hoshi (Tokyo Polytechnic Univ.), Takeo Maruyama (Niigata Univ.) |
| (10) |
13:00-13:25 |
Preparation and examination of ITO thin film for organic electroluminescence device |
Kouichi Tsukio, Masaki Takeuchi, Kazuya Morishita, Hidehiko Shimizu, Takeo Maruyama, Takahiro Kawakami (Niigata Univ.), Yoichi Hoshi (Tokyo Polytechnic Univ.) |
| Contact Address and Latest Schedule Information |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
Hidehiko Shimizu（Niigata Univ.）
TEL 025-262-6811 FAX 025-262-6811
E- :     eng  i  -u
Akio Yamamoto（Univ. of Fukui）
TEL 0776-27-8566 FAX 0776-27-8749
E-:      ee i-u
Kanji Yasui（Nagaoka Univ. of Technol.）
TEL 0258-47-9502 FAX 0258-47-9500
E-: k ivos  ut |
Last modified: 2005-09-23 16:42:06
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