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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Hiroshige Hirano (TowerPartners Semiconductor)
Vice Chair Shunichiro Ohmi (Tokyo Inst. of Tech.)
Secretary Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)
Assistant Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.)

Conference Date Thu, Nov 11, 2021 09:55 - 17:40
Fri, Nov 12, 2021 09:30 - 17:35
Topics Process, Device, Circuit simulation, etc. 
Conference Place Virtual conference 
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
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and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM.

Thu, Nov 11 AM 
09:55 - 12:00
  09:55-10:00 Opening Address ( 5 min. )
(1) 10:00-11:00 [Invited Talk]
New Development of Silicon IGBT
-- Scaling IGBT and Double-Gate IGBT --
SDM2021-53
Toshiro Hiramoto, Takuya Saraya (UTokyo)
(2) 11:00-12:00 [Invited Talk]
Non-Normal Model Parameter Generation for Variation-Aware Circuit Simulation SDM2021-54
Takashi Sato, Hiroki Tsukamoto, Song Bian (Kyoto Univ.), Michihiro Shintani (NAIST)
  12:00-13:00 Lunch Break ( 60 min. )
Thu, Nov 11 PM 
13:00 - 15:00
(3) 13:00-14:00 [Invited Talk]
Prospects of HfZrO2-based FeFETs for Ultra-low Power Memory, Logic and AI Applications SDM2021-55
Shinichi Takagi, Kasidit Toprasertpong, Xuan Luo, Eishin Nako, Zeyu Wang, Tsung-En Lee, Kento Tahara, Mitsuru Takenaka, Ryosho Nakane (U. Tokyo)
(4) 14:00-15:00 [Invited Talk]
Study on the efficient erase opeartion in ferroelectric HfO2 FeFET toward 3D vertical structure SDM2021-56
Masaharu Kobayashi, Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Chun-Jung Su (TSRI), Vita Pi-Ho Hu (NTU)
  15:00-15:15 Break ( 15 min. )
Thu, Nov 11 PM 
15:15 - 17:40
(5) 15:15-16:15 [Invited Talk]
Characterization techniques of plasma process-induced defect creation in electronic devices SDM2021-57
Koji Eriguchi (Kyoto Univ.)
(6) 16:15-16:40 A threshold voltage definition based on a standardized charge vs. voltage relationship SDM2021-58 Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo)
(7) 16:40-17:40 [Invited Talk]
SISPAD2021 Review SDM2021-59
Hideki Minari (Sony Semiconductor Solutions)
Fri, Nov 12 AM 
09:30 - 12:30
(8) 09:30-10:30 [Invited Talk]
Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects SDM2021-60
Takuma Kobayashi (Kyoto Univ./Tokyo Tech), Takafumi Okuda, Keita Tachiki, Koji Ito (Kyoto Univ.), Yu-ichiro Matsushita (Tokyo Tech), Tsunenobu Kimoto (Kyoto Univ.)
(9) 10:30-11:30 [Invited Talk]
Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport SDM2021-61
Tomoya Nishimura, Katsumi Eikyu, Kenichiro Sonoda, Tamotsu Ogata (Renesas Electronics)
(10) 11:30-12:30 [Invited Talk]
Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton SDM2021-62
Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu)
  12:30-13:30 Lunch Break ( 60 min. )
Fri, Nov 12 PM 
13:30 - 15:30
(11) 13:30-14:30 [Invited Talk]
Synthesis of turbostratic multilayer graphene nanoribbon and its electrical transport properties SDM2021-63
Ryota Negishi (Toyo Univ.)
(12) 14:30-15:30 [Invited Talk]
A Theoretical Study on Strain-Induced Change of Schottky Energy Barrier of Dumbbell-Shape Graphene-Nanoribbons for Highly Sensitive Strain Sensors SDM2021-64
Qinqiang Zhang, Ken Suzuki, Hideo Miura (Tohoku Univ.)
  15:30-15:45 Break ( 15 min. )
Fri, Nov 12 PM 
15:45 - 17:35
(13) 15:45-16:45 [Invited Talk]
Acceleration of nonequilibrium Green's function simulation for nanoscale devices by applying machine-learning model SDM2021-65
Satofumi Souma (Kobe Univ.)
(14) 16:45-17:10 Simulation of Phonon Transport in Si Nanowires with Physics Informed Neural Networks SDM2021-66 Yuma Fujita, Yuhei Suzuki, Yoshinari Kamakura (Osaka Inst. Technol.)
(15) 17:10-17:35 Inference of MOSFET Characteristics and Parameters with Machine Learning SDM2021-67 Kohei Akazawa, Yuigo Nakanishi, Yuhei Suzuki, Yoshinari Kamakura (Osaka Inst. Technol.)

Announcement for Speakers
Invited TalkEach speech will have 50 minutes for presentation and 10 minutes for discussion.
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address  


Last modified: 2021-09-08 18:33:17


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