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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tatsuya Kunikiyo (Renesas)
Vice Chair Takahiro Shinada (Tohoku Univ.)
Secretary Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant Hiroya Ikeda (Shizuoka Univ.)

Conference Date Wed, Oct 26, 2016 14:00 - 16:50
Thu, Oct 27, 2016 10:00 - 14:40
Topics Process Science and New Process Technology 
Conference Place Niche, Tohoku Univ. 
Address 6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
Contact
Person
Rihito Kuroda, Tohoku University
Copyright
and
reproduction
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Wed, Oct 26 PM 
14:00 - 16:50
(1) 14:00-14:50 [Invited Talk]
Controlling Metallic Contamination in Advanced ULSI Processing SDM2016-69
Koichiro Saga (Sony)
(2) 14:50-15:15 Formation technology of Flat Surface after Selective Epitaxial Growth on Ion-Implanted (100) Oriented Thin SOI Wafers SDM2016-70 Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa (Tohoku Univ.), Daisuke Suzuki, Yoichiro Chiba, Katsutoshi Ishii, Akira Shimizu, Kazuhide Hasebe (Tokyo Electron Tohoku)
  15:15-15:30 Break ( 15 min. )
(3) 15:30-16:10 [Invited Talk]
Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB CMOS Circuits at Ultralow-Voltage (0.4 V) Operation SDM2016-71
Hideki Makiyama, Yoshiki Yamamoto, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Hiroki Shinkawata, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitach), Koichiro Ishibashi (The Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (The Univ. of Tokyo)
(4) 16:10-16:50 [Invited Talk]
Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias SDM2016-72
Yoshiki Yamamoto, Hideki Makiyama, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Shinkawata Hiroki, Shiro Kamohara, Yasuo Yamaguchi (Renesas), Nobuyuki Sugii (Hitachi), Tomoko Mizutani, Toshiro Hiramoro (UT)
Wed, Oct 26 PM 
16:50 - 16:50
Thu, Oct 27 AM 
10:00 - 14:40
(5) 10:00-10:25 Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition SDM2016-73 Masaya Saito, Tomoyuki Suwa, Akinobu Teramoto, Rihito Kuroda, Yasumasa Koda, Hisaya Sugita, Hidekazu Ishii, Yoshinobu Shiba, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku univ.), Marie Hayashi, Junichi Tsuchimoto (CANON ANELVA)
(6) 10:25-10:50 A Study on Pentacene Film Formation on SiO2 with Wet Process for Bottom-Contact Type OFETs SDM2016-74 Yasutaka Maeda, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.)
(7) 10:50-11:15 Behavior of Random Telegraph Noise toward Bias Voltage Changing SDM2016-75 Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shinya Ichino, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)
(8) 11:15-11:40 Effect of Si surface flatness on electrical characteristics of Hf-based MONOS structure SDM2016-76 Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech)
  11:40-13:00 Lunch ( 80 min. )
(9) 13:00-13:50 [Invited Talk]
Novel Pixel Structure with Stacked Deep Photodiode to Achieve High NIR Sensitivity and High MTF SDM2016-77
Hiroki Takahashi, Hiroshi Tanaka, Masahiro Oda, Mitsuyoshi Ando, Naoto Niisoe (TPSCo), Shinichi Kawai, Takuya Asano, Mitsugu Yoshita, Tohru Yamada (PSCS)
(10) 13:50-14:40 [Invited Talk]
Low-Noise Imaging Techniques for Scientific CMOS Image Sensors SDM2016-78
Min-Woong Seo, Shoji Kawahito (Shizuoka Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E--mail: e3 


Last modified: 2016-08-19 13:11:18


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