|
|
| Chair |
|
Tetsu Kachi (Toyota Central R&D Labs.) |
| Vice Chair |
|
Naoki Hara (Fujitsu Labs.) |
| Secretary |
|
Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.) |
| Assistant |
|
Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.) |
|
|
|
| Chair |
|
Yasushi Takemura (Yokohama National Univ.) |
| Vice Chair |
|
Yasushi Takano (Shizuoka Univ.) |
| Secretary |
|
Toshishige Shimamura (NTT), Katsuya Abe (Shinshu Univ.) |
| Assistant |
|
Koji Enbutsu (NTT), Tomomasa Sato (Kanagawa Univ.) |
|
|
|
| Chair |
|
Tetsuro Endo (Tohoku Univ.) |
| Vice Chair |
|
Yasuo Nara (Fujitsu Semiconductor) |
| Secretary |
|
Yukinori Ono (NTT), Shintaro Nomura (Univ. of Tsukuba) |
| Assistant |
|
Yoshitaka Sasago (Hitachi) |
|
| Conference Date |
Thu, May 17, 2012 13:00 - 17:10
Fri, May 18, 2012 09:00 - 16:30 |
| Topics |
|
| Conference Place |
Venture Business Laboratory, Toyohashi University of Technology |
| Address |
1-1, Hibarigaoka, Tempa-ku, Toyohashi-shi, 441-8580 Japan |
| Transportation Guide |
http://www.tut.ac.jp/english/introduction/map.html |
Contact
Person |
Dr. Hiroshi Okada
+81-532-44-6721 |
| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics and cooperated by VBL, Toyohashi University of Technology
|
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, May 17 PM
13:00 - 15:20 |
| (1) |
13:00-13:40 |
[Invited Talk]
Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes  ED2012-17 CPM2012-1 SDM2012-19 |
Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
| (2) |
13:40-14:05 |
Improvement in crystalline quality of GaAsN alloy by high temperature growth ED2012-18 CPM2012-2 SDM2012-20 |
Futoshi Fukami, Noriyuki Urakami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) |
| (3) |
14:05-14:30 |
Electrical properties of n- and p-type AlGaPN for dislocation-free light-emitting devices on Si substrate ED2012-19 CPM2012-3 SDM2012-21 |
Hironari Ito, Keisuke Kumagai, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. of Tech.) |
| (4) |
14:30-14:55 |
Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si ED2012-20 CPM2012-4 SDM2012-22 |
Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) |
| (5) |
14:55-15:20 |
Growth-rate dependence of GaP structure grown Si substrates using metalorganic vapor phase epitaxy ED2012-21 CPM2012-5 SDM2012-23 |
Tatsuya Takagi, Shunshin Ka, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.) |
| |
15:20-15:30 |
Break ( 10 min. ) |
Thu, May 17 PM
15:30 - 17:10 |
| (6) |
15:30-15:55 |
A Surface-stress Sensor Based on a MEMS Fabry-Perot Interferometer for Label-free Protein Detection ED2012-22 CPM2012-6 SDM2012-24 |
Kazuhiro Takahashi, Hiroki Oyama, Nobuo Misawa, Koichi Okumura, Makoto Ishida, Kazuaki Sawada (Toyohashi Tech.) |
| (7) |
15:55-16:20 |
Fabrication and transmit-receive characteristics of ultrasonic transducers array using epitaxial PZT thin films on γ-Al2O3/Si substrates ED2012-23 CPM2012-7 SDM2012-25 |
Katsuya Ozaki, Masato Nishimura, Keisuke Suzuki, Yasuyuki Numata (Toyohashi tech.), Nagaya Okada (Honda Electronics), Daisuke Akai, Makoto Ishida (Toyohashi tech.) |
| (8) |
16:20-16:45 |
Fabrication of portable hydrogen sensors based on photochemically deposited SnO2 thin films ED2012-24 CPM2012-8 SDM2012-26 |
Dengbaoleer Ao, Yukihisa Moriguchi, Masaya Ichimura (Nagoya Inst. of Tech.Univ) |
| (9) |
16:45-17:10 |
Preparation and evaluation of Ga2O3 oxygen sensors ED2012-25 CPM2012-9 SDM2012-27 |
Masaaki Isai, Takahiro Yamamoto, Takuma Tori (Shizuoka Univ.) |
Fri, May 18 AM
09:00 - 10:15 |
| (10) |
09:00-09:25 |
High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa ED2012-26 CPM2012-10 SDM2012-28 |
Masashi Kashiwano, Jun Hirai, Shunsuke Ikeda, Motohiko Fujimatsu, Yasuyuki Miyamoto (TITech) |
| (11) |
09:25-09:50 |
Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces ED2012-27 CPM2012-11 SDM2012-29 |
Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) |
| (12) |
09:50-10:15 |
Evaluation of GaN substrates for vertical GaN power device applications ED2012-28 CPM2012-12 SDM2012-30 |
Tetsu Kachi, Tsutomu Uesugi (Toyota RDL) |
| |
10:15-10:25 |
Break ( 10 min. ) |
Fri, May 18 AM
10:25 - 12:05 |
| (13) |
10:25-10:50 |
Electrical Property of n-type GaPN:S Grown by Alternately N Supplied Organometallic Vapor Phase Epitaxy ED2012-29 CPM2012-13 SDM2012-31 |
Yuya Nagamoto, Katsuhiko Matsuoka, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (TUT) |
| (14) |
10:50-11:15 |
Low temperature crystallization of SiC films by metal induced growth technique ED2012-30 CPM2012-14 SDM2012-32 |
Katsuya Abe, Ryohei Ushikusa, Yuya Sakaguchi, Takuu Syu, Tomohiko Yamakami (Shinshu Univ.) |
| (15) |
11:15-11:40 |
Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation ED2012-31 CPM2012-15 SDM2012-33 |
Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) |
| (16) |
11:40-12:05 |
Growth and characterization of strained Ge epitaxial layers on SiGe substrates ED2012-32 CPM2012-16 SDM2012-34 |
Takashi Yamaha, Osamu Nakatsuka (Nagoya Univ.), Kyoichi Kinoshita, Shinichi Yoda (JAXA), Shigeaki Zaima (Nagoya Univ.) |
| |
12:05-13:00 |
Lunch Break ( 55 min. ) |
Fri, May 18 PM
13:00 - 14:40 |
| (17) |
13:00-13:25 |
Influences of Crystal Structure and Orientation on Band Offsets at the CdS/Cu2ZnSnS4 Interface by First Principles Study ED2012-33 CPM2012-17 SDM2012-35 |
Wujisiguleng Bao, Masaya Ichimura (Nagoya Inst. of Tech) |
| (18) |
13:25-13:50 |
Electrodeposition of Ga2O3 Thin Films from Aqueous Gallium Sulfate Solutions ED2012-34 CPM2012-18 SDM2012-36 |
Junie Jhon M. Vequizo, Masaya Ichimura (Nagoya Inst. of Tech.) |
| (19) |
13:50-14:15 |
H2O2 treatment of the Cu2O thin films deposited by the electrochemical method ED2012-35 CPM2012-19 SDM2012-37 |
Ying Song, Masaya Ichimura (Nagoya Inst. of Tech.) |
| (20) |
14:15-14:40 |
Characterization of Local Electronic Transport and Electronic Emission Properties of Pillar-Shaped Si Nanostructures ED2012-36 CPM2012-20 SDM2012-38 |
Daichi Takeuchi, Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.), Hirokazu Kaki, Tsukasa Hayashi (NISSIN ELECTRIC Co. Ltd.) |
| |
14:40-14:50 |
Break ( 10 min. ) |
Fri, May 18 PM
14:50 - 16:30 |
| (21) |
14:50-15:15 |
Preparation and evaluation of LiMn2O4 films prepared by sputtering method ED2012-37 CPM2012-21 SDM2012-39 |
Akio Niwa, Masaaki Isai, Mitsuhiro Nakamura, Takashi Noguchi (Shizuoka Univ.) |
| (22) |
15:15-15:40 |
Co-catalyitic effect on improving the photocatalytic properties of TiO2 films ED2012-38 CPM2012-22 SDM2012-40 |
Masaaki Isai, Ikuta Nakamura, Yuuki Hieda, Fumiya Fukazawa (Shizuoka Univ.), Yoichi Hoshi (Tokyo Polytech.Univ.) |
| (23) |
15:40-16:05 |
A tunable color filter based on sub-wavelength gratings using electrostatic microactuator ED2012-39 CPM2012-23 SDM2012-41 |
Hiroaki Honma, Hajime Miyao, Kazuhiro Takahashi, Makoto Ishida, Kazuaki Sawada (Toyohashi Tech.) |
| (24) |
16:05-16:30 |
Analysis of Optical Frequency Signal Transmission through Whispering Gallery Mode ED2012-40 CPM2012-24 SDM2012-42 |
Masashi Fukuhara, Yenling Yu, Takuma Aihara, Kyohe Nakagawa, Hirotaka Yamashita (Toyohashi Univ. of Tech.), Kenzo Yamaguchi (Kagawa Univ.), Mitsuo Fukuda (Toyohashi Univ. of Tech.) |
| Announcement for Speakers |
| Invited Talk | Each speech will have 35 minutes for presentation and 5 minutes for discussion. |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Hara Naoki （Fujitsu Lab.）
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E- :     o      
Kunio Tsuda（Toshiba）
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E- :   o   ba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- :      t 
Tetsuzo Ueda（Panasonic)
TEL：+81-75-956-8273、FAX：+81-75-956-9110
E-：   zopa c |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
|
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E-: o     |
Last modified: 2012-04-10 19:02:44
|